SiC MOSFETs & Wide-Bandgap Power Devices

SiC MOSFETs offer significantly lower switching losses and higher operating temperatures than silicon MOSFETs, enabling smaller magnetics and higher switching frequencies in inverters, onboard chargers, and PFC stages. Key specs: V_DS rating (typically 650V–1700V), R_DS(on) at T_J=150°C, gate charge (Q_g), body diode forward voltage (V_SD), and C_oss for loss calculations. Unlike Si, SiC body diodes have no significant reverse recovery — but the gate threshold voltage is low (~2–3V), requiring a negative turn-off bias with many gate drivers.

Families covered: Wolfspeed C3M (1200V/650V SiC), Infineon CoolSiC AIMB/AIMD (1200V), Littelfuse CLB (1200V SiC half-bridge modules), ON Semi NTH4L/NTHL (1200V), United SiC UJ3C (650V/1200V).