Key Specs
| Spec | Value | Condition | Source |
|---|---|---|---|
| Current Continuous Drain ID 25 C | 54A (Tc) | Digi-Key | |
| Drain-source Voltage (Max) | 1200 V | Digi-Key | |
| Drive Voltage Max RDS On Min RDS On | 18V, 20V | Digi-Key | |
| FET Feature | - | Digi-Key | |
| FET Type | N-Channel | Digi-Key | |
| Gate Charge Qg Max VGS | 43 nC @ 20 V | Digi-Key | |
| Gate-source Voltage (Max) | +25V, -10V | Digi-Key | |
| Grade | Automotive | Digi-Key | |
| Input Capacitance Ciss Max VDS | 1264 pF @ 800 V | Digi-Key | |
| Mounting Type | Surface Mount | Digi-Key | |
| Operating Temperature Range | -55°C ~ 175°C (TJ) | Digi-Key | |
| Package Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Digi-Key | |
| Power Dissipation (Max) | 268W (Tc) | Digi-Key | |
| Qualification | AEC-Q101 | Digi-Key | |
| RDS On Max ID VGS | 50mOhm @ 20A, 20V | Digi-Key | |
| Supplier Device Package | PG-TO263-7 | Digi-Key | |
| Technology | SiCFET (Silicon Carbide) | Digi-Key | |
| VGS Th Max ID | 5.1V @ 6.4mA | Digi-Key |
When To Use
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1200 V solar string inverter stage @ 50 A: The 1200 V drain-source rating with a 54 A continuous current at 25°C junction makes this part fit for high-voltage DC link stages in string inverters. Using a lower voltage MOSFET risks avalanche breakdown during high-voltage transients, causing device failure.
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Automotive onboard charger switching FET @ 20 V gate drive: The gate threshold max of 5.1 V and max gate charge of 43 nC at 20 V allow efficient switching with standard 18–20 V gate drivers while maintaining low Rds(on) (50 mΩ @ 20 V). A device with higher gate charge would increase switching losses and thermal stress, leading to thermal runaway under continuous high-current operation.
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Industrial motor drive inverter leg @ 54 A continuous: The TO-263-8 package with 268 W maximum power dissipation at case temperature supports sustained high power with effective heat sinking. Alternative smaller packages or lower power devices risk thermal runaway or early junction overheating during continuous high current loads.
When Not To Use
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>54 A continuous output current requirement: The 54 A continuous drain current at 25°C limits maximum load current. For higher current loads, a multi-phase buck controller or high-current synchronous buck with external FETs should be used to distribute current and prevent thermal runaway.
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Switching frequency > 500 kHz for compact magnetics: The gate charge of 43 nC at 20 V and relatively high input capacitance (1264 pF) make switching losses significant at high frequency. Use a high-frequency buck controller optimized for lower gate charge FETs to avoid excessive switching losses and thermal issues.
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Low dropout linear regulation with <1 V input-output difference: This MOSFET’s Rds(on) and voltage rating are overkill for small voltage drops, and conduction losses will dominate. Use an LDO regulator for low noise and efficient low-dropout operation.
Application Notes
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The switching node (SW) connected to the device’s drain must have minimal parasitic inductance; keep PCB loops tight to avoid voltage overshoot from the SiC MOSFET’s fast switching transitions.
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Pins associated with the gate drive (likely gate and source pins on the PG-TO263-7 package) are noise sensitive; use Kelvin source routing and separate gate drive return paths to minimize gate voltage ringing and false turn-on.
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The device’s maximum gate-source voltage of +25 V / -10 V requires gate driver supply rails to be tightly controlled. Avoid transient spikes on the gate drive line by adding gate resistors and snubbers if necessary.
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Guard routing or ground pours should surround the gate drive traces to reduce EMI coupling into control circuitry, especially in automotive environments.
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The large input capacitance (1264 pF @ 800 V) can cause significant capacitive charging losses; design the gate driver stage to handle these transient currents and avoid driver undervoltage conditions.
Gotchas
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[Ignoring temperature derating on continuous current]: Relying solely on the 54 A continuous current rating at 25°C without considering junction temperature rise leads to thermal runaway under real operating conditions. The device’s Rds(on) increases with temperature, causing more heating and a positive feedback loop.
Fix: Measure junction temperature under worst-case load and ensure sufficient cooling to keep TJ < 175°C; use thermal simulation and real thermal interface materials. -
[Gate voltage overshoot beyond ±25 V during switching]: Fast switching transitions combined with PCB parasitic inductance cause gate voltage ringing above the maximum ±25 V rating, resulting in gate oxide damage and device failure. This can be missed in basic simulation without detailed parasitic models.
Fix: Implement gate resistors, clamp diodes, and minimize loop inductance; verify gate voltage waveform with high-bandwidth scope and differential probes. -
[Assuming stable operation with low ESR output capacitors]: Using very low ESR ceramic capacitors on the output can cause high-frequency oscillations due to interaction with the MOSFET’s fast switching and input capacitance, leading to erratic switching and audible noise.
Fix: Add a small-value ESR capacitor or RC snubber on the output; validate stability in bench testing with real load conditions. -
[Startup with no minimum load causing gate driver undervoltage]: The gate driver may fail to fully switch the MOSFET if the load is too light at startup, resulting in partial conduction, excessive losses, and device heating despite appearing correct in static testing.
Fix: Design for a minimum load or add a preload resistor to ensure proper gate drive voltage and full switching transitions during power-up.