NX3008NBKS,115 vs C3M0021120K MOSFET Comparison
Quick verdict
For low-voltage, low-current switching or analog multiplexing in compact, thermally constrained applications, the NX3008NBKS,115 is the clear choice due to its integrated dual MOSFET array, small footprint, and logic-level gate drive. In contrast, the C3M0021120K is designed for high-voltage, high-current power stages requiring robust SiC performance, making it suitable for industrial motor drives, power supplies, or inverters where 1200 V blocking and 100 A continuous current are mandatory.
Spec comparison table
| Spec | NX3008NBKS,115 | C3M0021120K | Notes |
|---|---|---|---|
| Technology | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | SiC enables higher voltage and temperature operation; MOSFET better for low-voltage logic. |
| Configuration | 2 N-Channel (Dual) | Single N-Channel | Dual MOSFET array offers integrated switching pairs; single transistor for power stages. |
| Drain-Source Voltage (max) | 30 V | 1200 V | C3M0021120K supports much higher voltages, enabling high-voltage applications. |
| Continuous Drain Current (Id) @25°C | 350 mA | 100 A (Tc) | C3M0021120K supports nearly 300x higher current; NX3008NBKS for low-current signals. |
| Drain Current Spiking (max) | 1.4 A | Not specified | NX3008NBKS supports small spike currents; C3M0021120K datasheet does not specify. |
| Drain-Source On-Resistance (Rds(on)) | Typ 1.5 Ω @ 350mA, 4.5V gate | 28.8 mΩ @ 50A, 15V gate | C3M0021120K has much lower Rds(on) at high current, suited for power efficiency. |
| Gate Threshold Voltage (Vgs(th)) | Typ 0.6–1.1 V (max 1.1V @ 250µA) | 3.6 V @ 17.7 mA | NX3008NBKS logic-level gate drive; C3M0021120K requires higher gate drive voltage. |
| Gate Charge (Qg) | Typ 0.52–0.68 nC @ 4.5 V | 162 nC @ 15 V | NX3008NBKS has extremely low gate charge, enabling fast switching with minimal drive loss. |
| Input Capacitance (Ciss) | Typ 34–50 pF @ 25°C, 50 pF @ 15V | 4818 pF @ 1000 V | NX3008NBKS input capacitance is orders of magnitude smaller, aiding high-speed switching. |
| Output Capacitance (Coss) | Typ 6.5 pF | Not specified | NX3008NBKS output capacitance very low, reducing switching losses in low-power circuits. |
| Reverse Transfer Capacitance (Crss) | Typ 2.2 pF | Not specified | Lower Crss in NX3008NBKS reduces Miller effect, beneficial for switching speed. |
| Power Dissipation (max) | 445 mW (device), 990 mW (total) | 469 W (Tc) | C3M0021120K designed for very high power dissipation; NX3008NBKS limited to milliwatts. |
| Operating Temperature Range | -55°C to +150°C | -40°C to +175°C | C3M0021120K supports wider high-temperature operation; NX3008NBKS supports wider low-temp. |
| Package | 6-TSSOP (6-pin, surface mount) | TO-247-4L (through-hole) | NX3008NBKS is compact SMT; C3M0021120K is large, higher power package requiring heatsink. |
| Mounting Type | Surface Mount | Through Hole | SMT for compact, low-profile designs; Through-hole for robust power stage assembly. |
| ESD Rating | 2000 V | Not specified | NX3008NBKS has specified ESD rating; C3M0021120K datasheet does not detail it. |
| Junction to Ambient Thermal Resistance (typical) | 300 K/W per device, 390-445 K/W per transistor | Not specified | NX3008NBKS has high thermal resistance, limiting power dissipation in compact PCB layouts. |
| Gate Voltage Range | ±8 V | +15 V / -4 V | NX3008NBKS suited for low-voltage gate drive; C3M0021120K requires higher gate voltage swing. |
| Transient Thermal Impedance (typical) | 0.01–1 K/W depending on pulse width | Not specified | NX3008NBKS transient thermal data allows pulse power calculations; unknown for C3M0021120K. |
Design trade-offs
The NX3008NBKS,115 is a dual-channel low-voltage MOSFET array optimized for signal-level switching and multiplexing. Its logic-level gate threshold (typical 0.6–1.1 V) and minimal gate charge (<1 nC) make it ideal for direct-driving from low-voltage digital logic or microcontrollers without dedicated gate drivers. The extremely low input capacitance (~50 pF) and reverse transfer capacitance (~2.2 pF) minimize switching losses and crosstalk in high-speed analog or digital switching applications. However, its maximum continuous drain current of 350 mA and on-resistance in the ohm range (typ 1.5 Ω) limit it to low-power loads or signal switching.
In contrast, the C3M0021120K uses SiC technology to achieve 1200 V blocking voltage and 100 A continuous current capability, designed for high-power applications like inverter legs, motor drives, and high-voltage power supplies. Its Rds(on) of 28.8 mΩ at 50 A and 15 V gate drive is very low for its voltage class, providing efficient conduction at high currents. However, it requires a higher gate drive voltage (15 V typical) and has a large gate charge of 162 nC, which increases driver complexity and switching losses. The TO-247-4L package supports robust thermal management with a heatsink or forced cooling, critical given the 469 W power dissipation rating.
Thermally, the NX3008NBKS,115 has a high junction-to-ambient resistance (300 K/W), limiting its power dissipation to under 1 W without additional heatsinking, making it unsuitable for power switching but adequate for signal-level control. The C3M0021120K is rated at 469 W (case temperature), necessitating careful thermal design but enabling high-current operation. The SiC device’s ability to operate up to 175°C junction temperature offers additional headroom in harsh environments.
From a layout perspective, the NX3008NBKS,115’s small 6-TSSOP SMT package is compatible with dense PCB designs and simplifies integration into multi-function modules. The C3M0021120K’s large through-hole package demands more PCB area and mechanical support but facilitates high current bus bar or wire bonding connections.
Cost-wise, the NX3008NBKS,115 is likely a commodity device priced for volume in consumer or automotive signal switching, whereas the C3M0021120K, with its SiC technology and high-power rating, commands a significantly higher unit cost, justified only in demanding high-voltage power stages.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a compact dual MOSFET array for low-voltage analog or digital signal switching up to 350 mA.
- Your design requires direct logic-level gate drive with minimal gate charge and input capacitance.
- The application operates within a 30 V rail and low power dissipation (<1 W) constraints.
- You need a device qualified to AEC-Q101 for automotive signal switching in harsh conditions.
- The PCB footprint must be small, surface mount, and compatible with dense layouts or multi-channel switching.
Choose C3M0021120K when…
- Your application requires blocking voltages up to 1200 V, such as industrial motor drives or power inverters.
- Continuous current loads up to 100 A are expected, with low conduction losses at high current.
- The system can provide a 15 V gate drive and accommodate the large gate charge in the gate driver design.
- Thermal management is designed with heatsinks or forced air to handle up to 469 W dissipation.
- You need SiC device advantages like high temperature operation (up to 175°C TJ) and fast switching at high voltage.
Drop-in compatibility
These parts are not pin-compatible or footprint-compatible. The NX3008NBKS,115 is a 6-pin surface-mount dual MOSFET array in a 6-TSSOP package intended for low-voltage signal switching, while the C3M0021120K is a single high-power