Key Specs
| Spec | Value | Condition | Source |
|---|---|---|---|
| Current Continuous Drain ID 25 C | 14.5A (Ta), 40A (Tc) | Digi-Key | |
| Drain-source Voltage (Max) | 20 V | Digi-Key | |
| Drive Voltage Max RDS On Min RDS On | 1.8V, 4.5V | Digi-Key | |
| FET Feature | - | Digi-Key | |
| FET Type | P-Channel | Digi-Key | |
| Gate Charge Qg Max VGS | 53 nC @ 4.5 V | Digi-Key | |
| Gate-source Voltage (Max) | ±8V | Digi-Key | |
| Grade | - | Digi-Key | |
| Input Capacitance Ciss Max VDS | 4195 pF @ 10 V | Digi-Key | |
| Mounting Type | Surface Mount | Digi-Key | |
| Operating Temperature Range | -55°C ~ 150°C (TJ) | Digi-Key | |
| Package Case | 8-PowerVDFN | Digi-Key | |
| Power Dissipation (Max) | 3.1W (Ta), 29W (Tc) | Digi-Key | |
| Qualification | - | Digi-Key | |
| RDS On Max ID VGS | 9.5mOhm @ 14A, 4.5V | Digi-Key | |
| Supplier Device Package | 8-DFN-EP (3x3) | Digi-Key | |
| Technology | MOSFET (Metal Oxide) | Digi-Key | |
| VGS Th Max ID | 900mV @ 250µA | Digi-Key |
When To Use
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12V automotive load switch @ 10A: The 20 V drain-source voltage max comfortably covers 12 V systems with margin for transients, and the low Rds(on) of 9.5 mΩ at 4.5 V gate drive keeps conduction losses low at 10A. Using a part with higher Rds(on) would cause excessive heat dissipation, risking thermal runaway in a compact 8-DFN package.
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Battery-powered 5 V load at 5A: The P-channel MOSFET topology allows simple high-side switching with a single gate drive voltage below ±8 V max, and the gate charge of 53 nC at 4.5 V enables moderate switching speeds without excessive driver losses. A synchronous buck controller without integrated FETs would add complexity, increasing shoot-through risk due to timing errors in the external FETs.
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Post-regulator switch in a 3.3 V, 14 A rail: The continuous drain current rating of 14.5 A at 25°C ambient meets the load with margin, and the 3x3 mm 8-DFN package supports sufficient heat dissipation up to 3.1 W at ambient conditions. Using a device with lower current rating risks latch-up or thermal shutdown under worst-case transient loads.
When Not To Use
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Output current above 14.5 A continuous: The maximum continuous drain current of 14.5 A at 25°C ambient disqualifies this device for higher current loads. Use a multi-phase buck controller to distribute current across multiple FETs and avoid overstressing a single MOSFET.
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Input voltage above 20 V: The 20 V maximum drain-source rating is too low for applications requiring higher input voltages or wide transient margins. Choose a synchronous buck controller designed for higher voltage ratings to prevent avalanche breakdown.
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Switching frequency exceeding 500 kHz: The gate charge of 53 nC at 4.5 V implies significant switching losses at very high frequencies. For switching above 500 kHz, a high-frequency buck controller with optimized gate drivers and lower gate charge FETs is more appropriate.
Application Notes
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The switching node (SW) connected to the drain of the P-channel MOSFET must have minimal parasitic inductance to reduce voltage overshoot and ringing during switching transitions.
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Pins 1 and the gate and source, respectively pin are noise-sensitive; keep gate drive traces short and use a low-inductance return path on the source to avoid unintended gate oscillations.
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The exposed pad (EP) on the 8-PowerVDFN package must be soldered directly to a large, low-thermal-resistance copper area with multiple vias to the PCB inner layers for effective heat dissipation.
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Avoid routing noisy switching currents near the gate drive trace to prevent false turn-on or increased EMI.
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The maximum ±8 V gate-source voltage must not be exceeded even transiently; implement proper gate driver clamping or level shifting to protect against voltage spikes.
Gotchas
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[Thermal derating at elevated junction temperatures]: The 14.5 A continuous current rating is specified at 25°C ambient; at higher junction temperatures (up to 150°C TJ max), effective current capability drops significantly, leading to unexpected thermal shutdown or device degradation.
Fix: Use junction temperature measurements or conservative thermal simulations and derate current accordingly. -
[Gate drive voltage margin underestimated]: Operating the gate at the minimum Rds(on) drive voltage (4.5 V) assumes a clean, stable 4.5 V supply. Any droop or noise below this reduces Rds(on), increasing conduction losses and potential thermal issues.
Fix: Design gate drive with at least ±10% voltage margin and verify with transient load testing. -
[Switch node ringing causing gate-source voltage overshoot]: High dV/dt at the SW node can capacitively couple into the gate, causing Vgs to exceed ±8 V momentarily, risking gate oxide damage or latch-up.
Fix: Add series gate resistors, snubbers on the SW node, or layout improvements to minimize loop inductance and overshoot. -
[Low gate charge but high input capacitance interaction]: The relatively large input capacitance (4195 pF) can slow switching transitions if the gate driver is weak, causing increased switching losses and distorted waveforms that look like driver failure.
Fix: Use a gate driver capable of sourcing/sinking sufficient peak current and verify switching waveforms on an oscilloscope during bring-up.