Key Specs
| Spec | Value | Condition | Source |
|---|---|---|---|
| Channel Type | Single | Digi-Key | |
| Current Peak Output Source Sink | - | Digi-Key | |
| Digikey Programmable | Not Verified | Digi-Key | |
| Driven Configuration | High-Side | Digi-Key | |
| Gate Type | MOSFET (N-Channel) | Digi-Key | |
| High Side Voltage Max Bootstrap | 60 V | Digi-Key | |
| Input Type | Non-Inverting | Digi-Key | |
| Logic Voltage Vil Vih | - | Digi-Key | |
| Mounting Type | Surface Mount | Digi-Key | |
| Number Of Drivers | 1 | Digi-Key | |
| Operating Temperature Range | -40°C ~ 125°C (TJ) | Digi-Key | |
| Package Case | 16-TFSOP (0.118”, 3.00mm Width) Exposed Pad | Digi-Key | |
| Rise Fall Time (Typ) | 90ns, 40ns | Digi-Key | |
| Supplier Device Package | 16-MSOP-EP | Digi-Key | |
| Voltage Supply | 3.5V ~ 15V | Digi-Key |
When To Use
Use the LTC7003EMSE in applications requiring a high-side N-Channel MOSFET driver with a single output channel operating from a supply voltage between 3.5 V and 15 V, such as synchronous rectification or high-side load switching in DC/DC converters. Its capability to handle bootstrap voltages up to 60 V and a fast rise/fall time (90 ns/40 ns) make it suitable for high-frequency power conversion where efficient gate drive and low switching losses are critical.
Do not use the LTC7003EMSE in applications requiring dual or multiple MOSFET drivers per channel, low-side MOSFET driving, or in environments exceeding the specified operating temperature range of -40°C to 125°C junction temperature. For low-side or dual-driver requirements, consider alternative devices designed for those configurations.
When Not To Use
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Output currents > 10 A continuous: The LTC7003EMSE#TRPBF is limited to a single-channel gate driver and typical MOSFET gate drive current appropriate for moderate loads, disqualifying it for very high current. Use a multi-phase buck controller instead to distribute current and reduce thermal stress.
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Applications requiring switching frequencies above 500 kHz: Rise/fall times and device internal timing are optimized for moderate frequency operation; higher switching frequencies degrade efficiency and increase switching losses. Use a high-frequency buck controller designed specifically for GHz-class switching.
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Low input-to-output voltage drop (< 1 V) with stringent noise requirements: This controller lacks integrated linear regulation and low dropout characteristics, making it unsuitable for small differential voltage regulation with minimal noise. Use an LDO regulator to achieve low noise and tight voltage regulation under these conditions.
Application Notes
The LTC7003EMSE’s high-side MOSFET gate node switches rapidly and should be routed with the smallest possible loop area to minimize parasitic inductance and reduce EMI. The bootstrap capacitor and gate resistor should be placed as close as possible to the device pins to maintain stable gate drive voltage.
The input pin is noise-sensitive; ensure clean, well-defined logic signals free from high-frequency switching noise to prevent false triggering. Proper PCB layout with ground planes and decoupling capacitors is essential.
Due to the low power dissipation of the LTC7003EMSE at typical operating points, a heatsink is generally not required. However, thermal considerations should be evaluated based on the MOSFET’s switching losses and the ambient temperature, ensuring the device junction temperature remains within the -40°C to 125°C range.
Gotchas
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[Bootstrap voltage derating ignored]: Designers often assume the 60 V bootstrap max is a hard absolute, but real-world voltage spikes on the SW node during transients can exceed this, especially with inductive loads. This causes MOSFET gate oxide stress and eventual latch-up. Measure the SW node ringing with a high-bandwidth scope and include snubber or clamp circuits to keep bootstrap voltage spikes below 60 V.
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[Gate drive layout capacitance causing oscillation]: Routing long or wide gate drive traces increases parasitic capacitance and inductance, which can couple with the internal gate driver and cause high-frequency oscillations. These manifest as ringing on the gate waveform and increased device heating. To fix, minimize gate drive loop area and use a small series gate resistor (10–22 Ω).
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[Assuming minimal load startup]: Without a minimum load, the bootstrap capacitor may not charge properly on startup because the driver cannot pull the high-side gate fully high. This leads to incomplete MOSFET turn-on, causing the output voltage to stall or ripple excessively. Add a small dummy load or a bootstrap precharge circuit to ensure proper startup.
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[Ignoring exposed pad thermal path]: Relying solely on package leads for heat dissipation leads to elevated junction temperatures and premature thermal shutdown under load, despite correct component selection. Proper PCB thermal design with soldered exposed pad and thermal vias is mandatory to prevent thermal runaway and enable stable operation.