Comparison: Infineon 2EDN8533RXTMA1 vs 1EDI40I12AFXUMA1 Gate Drivers
Quick verdict
For low-side MOSFET or GaN FET gate driving in compact, high-speed switching applications, the 2EDN8533RXTMA1 wins due to its higher peak output current (5A), faster switching times, and integrated inverting input logic. For isolated gate driving, particularly where galvanic isolation and higher output supply voltages (13–35 V) are needed, the 1EDI40I12AFXUMA1 is the better choice despite slower rise/fall times and a single channel.
Spec comparison table
| Spec | 2EDN8533RXTMA1 | 1EDI40I12AFXUMA1 | Notes |
|---|---|---|---|
| Channel type | Independent (2 channels) | Single channel | 2EDN8533RXTMA1 offers dual channels, enabling multi-FET drive from one IC |
| Peak output current (source/sink) | 5A / 5A | Not specified | 2EDN8533RXTMA1 provides explicit and strong 5A drive current for fast gate charging |
| Driven configuration | Low-Side | Not specified | 2EDN8533RXTMA1 explicitly designed for low-side drive; 1EDI40I12AFXUMA1 is isolated driver |
| Gate transistor type | GaN FET, N-Channel MOSFET | Not specified | 2EDN8533RXTMA1 tailored for modern fast-switching devices |
| High-side voltage max bootstrap | 20 V | Not applicable | 2EDN8533RXTMA1 supports bootstrap up to 20 V, relevant for half-bridge top-side drivers |
| Input type (logic) | Inverting | Not specified | Inverting input on 2EDN8533RXTMA1 requires logic consideration |
| Logic voltage thresholds (V_IL, V_IH) | 1.4 V / 1.9 V | Not specified | 2EDN8533RXTMA1 logic thresholds are low-voltage compatible |
| Mounting type | Surface Mount | Surface Mount | Both suitable for SMT assembly |
| Number of drivers | 2 | 1 | 2EDN8533RXTMA1 provides two independent drivers, enabling simpler multi-FET driving |
| Operating temperature range (TJ) | -40°C to 150°C | -40°C to 150°C | Equivalent thermal range |
| Package | PG-TSSOP-8 (3.00mm width) | PG-DSO-8-51 (3.90mm width) | 2EDN8533RXTMA1 smaller footprint; 1EDI40I12AFXUMA1 larger package potentially easier to hand-solder or dissipate heat |
| Typical rise time | 8.6 ns | 10 ns | Faster rise time on 2EDN8533RXTMA1 supports higher switching frequency |
| Typical fall time | 6 ns | 9 ns | Faster fall time on 2EDN8533RXTMA1 |
| Supply voltage range | 4.5 V to 20 V | 13 V to 35 V | 2EDN8533RXTMA1 supports lower voltage supplies allowing use with 5V/12V rails; 1EDI40I12AFXUMA1 suitable for higher voltage rails |
| Technology | MOSFET/GaN Gate Driver IC | Magnetic Coupling Isolation | Magnetic coupling provides galvanic isolation on 1EDI40I12AFXUMA1 |
Design trade-offs
The 2EDN8533RXTMA1 is a conventional low-side gate driver optimized for driving N-channel MOSFETs or GaN FETs directly from a low-voltage supply rail. Its 5A peak output current capability allows for rapid gate charging, minimizing switching losses through reduced transition times. The inverting input logic must be accounted for in gate drive logic design, but this is straightforward with modern microcontrollers or gate driver ICs. The small PG-TSSOP-8 package favors compact PCB layouts and reduces parasitic inductances, which is critical for high-frequency switching.
Thermal dissipation on the 2EDN8533RXTMA1 can be managed effectively given its moderate supply voltage range (4.5–20 V) and fast switching times. However, the integrated driver is not isolated, so care must be taken to ensure common reference and proper layout to avoid noise coupling.
Conversely, the 1EDI40I12AFXUMA1 employs magnetic coupling technology to provide galvanic isolation between input and output. This isolation allows for safe driving of high-side or floating MOSFET gates in applications with high common-mode voltages. The operating supply voltage range (13–35 V) is higher, accommodating gate drive voltages for power MOSFETs or IGBTs that require 15–20 V drive levels for full enhancement.
The trade-off is slower rise/fall times (10 ns/9 ns vs 8.6 ns/6 ns) and only a single channel per device, which limits multi-FET driving flexibility. The larger SOIC package adds PCB area and potentially higher parasitic inductances, which could affect EMI and switching performance.
From a cost and complexity perspective, the 2EDN8533RXTMA1 is simpler to integrate and generally lower cost in volume due to its smaller package and lack of isolation. The 1EDI40I12AFXUMA1’s isolation capability demands more careful layout for magnetic coupling and may require additional components for power supply isolation, increasing BOM cost and design complexity.
Use-case fit
Choose 2EDN8533RXTMA1 when…
- Designing a non-isolated low-side driver stage for GaN or MOSFET switches running on 5–15 V supply rails.
- High switching frequency designs where fast gate charging and discharging (5A peak current) reduce switching losses.
- Compact PCB layouts where small 8-TSSOP footprints and dual driver channels reduce board size and component count.
- Systems where inverting input logic is acceptable or preferred for gate drive timing.
- Applications where cost sensitivity and simplified power rails are priorities over isolation.
Choose 1EDI40I12AFXUMA1 when…
- Gate driving requires galvanic isolation, such as driving high-side or floating MOSFETs or IGBTs in half-bridge or full-bridge topologies.
- The gate drive supply voltage is in the 13–35 V range, matching the driver’s output supply requirements.
- Single-channel isolated gate driver suffices, and slower rise/fall times (~10 ns) are acceptable within switching frequency targets.
- Designs where safety standards or EMC requirements demand physical isolation between control logic and power stages.
- Layout constraints allow for the larger SOIC package and associated magnetic coupling considerations.
Drop-in compatibility
These parts are not pin-compatible or footprint-compatible. The 2EDN8533RXTMA1 comes in a PG-TSSOP-8 package (3.00 mm width), while the 1EDI40I12AFXUMA1 uses a PG-DSO-8-51 package (3.90 mm width). Their internal technologies differ significantly (non-isolated vs isolated), and the 2EDN8533RXTMA1 has two channels versus one channel on the 1EDI40I12AFXUMA1. Input logic polarity and supply voltage ranges differ, so substituting one for the other requires schematic, PCB layout, and firmware changes.
Alternatives to consider
- Infineon 2EDN5417N06F: High-speed, low-side MOSFET driver with 7A peak current, suitable for demanding switching applications needing higher drive strength.
- Texas Instruments UCC37322: Dual high-speed MOSFET driver with 9A source/sink current, a common choice for fast switching power supplies.
- Analog Devices ADuM3223: Isolated dual-channel gate driver with digital isolation, providing galvanic isolation similar to 1EDI40I12AFXUMA1 but with integrated digital isolator technology.