Comparison: Infineon 2EDL8024GXUMA1 vs 1EDN7136GXTMA1 Gate Drivers
Quick verdict
For dual-channel gate driving of N-channel MOSFET half-bridge configurations at moderate voltages (up to 90 V bootstrap), the 2EDL8024GXUMA1 offers stronger drive current and simpler dual high-side/low-side integration, making it the better choice. For single high-side GaN or MOSFET gate driving requiring very fast switching and high bootstrap voltage tolerance (up to 200 V), the 1EDN7136GXTMA1 is preferable due to its superior switching speed and voltage endurance, despite lower peak drive current.
Spec comparison table
| Spec | 2EDL8024GXUMA1 | 1EDN7136GXTMA1 | Notes |
|---|---|---|---|
| Channel type | Independent | Independent | Equivalent; both provide isolated channel control. |
| Current peak output (source) | 4 A | 1 A | 2EDL8024GXUMA1 provides 4× higher peak drive current, enabling faster MOSFET charging. |
| Current peak output (sink) | 4 A | 1 A | Same as above; stronger sink current improves turn-off speed and reduces switching losses. |
| Programmable (Digikey) | Not Verified | Not Verified | No differentiation based on data. |
| Driven configuration | High-Side, Low-Side | High-Side | 2EDL8024GXUMA1 supports full half-bridge drive; 1EDN7136GXTMA1 is single-channel high-side only. |
| Gate type | MOSFET (N-Channel) | GaN FET, MOSFET (N-Channel) | 1EDN7136GXTMA1 supports GaN FETs, important for wide bandgap device drive requirements. |
| High-side voltage max bootstrap | 90 V | 200 V | 1EDN7136GXTMA1 allows higher bootstrap voltages, suitable for higher voltage rails. |
| Input type | Non-Inverting | Non-Inverting | Identical input logic type. |
| Mounting type | Surface Mount | Surface Mount | Equivalent. |
| Number of drivers | 2 | 1 | 2EDL8024GXUMA1 integrates both high-side and low-side drivers; 1EDN7136GXTMA1 is single driver. |
| Operating temperature range | -40°C to 125°C (TJ) | -40°C to 125°C (TJ) | Equivalent. |
| Package case | 8-VDFN Exposed Pad | 10-VFDFN Exposed Pad | 1EDN7136GXTMA1 uses larger package with more pins, possibly for enhanced functionality. |
| Rise/fall time (typical) | 45 ns / 45 ns | 5.5 ns / 5.5 ns | 1EDN7136GXTMA1 is ~8× faster switching, critical for high-frequency or GaN applications. |
| Voltage supply | 8 V to 17 V | 4.2 V to 11 V | 1EDN7136GXTMA1 supports lower supply voltage, potentially reducing power loss in driver. |
Design trade-offs
The 2EDL8024GXUMA1 targets a classic half-bridge gate driver role with independent high-side and low-side channels capable of sourcing and sinking 4 A peak. This high current capability allows it to drive large MOSFET gates quickly, reducing switching losses at moderate switching frequencies (up to a few hundred kHz). Its voltage supply range (8–17 V) fits well with standard bootstrap circuits using 12 V rails or bootstrap capacitors charged from 15 V rails. The 90 V maximum bootstrap voltage rating limits its use to medium-voltage applications.
In contrast, the 1EDN7136GXTMA1 is a single high-side driver optimized for high-speed switching of GaN and MOSFET devices. The critical differentiator is its very fast rise/fall time (5.5 ns), which is essential for GaN FETs that typically require very fast gate transitions to minimize losses and avoid cross-conduction. However, its peak drive current is only 1 A, which limits driving large gate charge MOSFETs but is sufficient for low gate charge GaN FETs. The lower voltage supply range (4.2–11 V) aligns with GaN gate drive levels, and the 200 V bootstrap rating enables use in higher voltage systems.
From a thermal standpoint, the higher peak current of the 2EDL8024GXUMA1 requires careful PCB layout to handle transient currents and avoid voltage overshoot or ringing. The dual-channel integration simplifies layout by reducing the number of separate ICs and drives. The 1EDN7136GXTMA1, with faster switching, imposes stricter layout constraints to minimize parasitics and ringing, especially at high frequencies.
Cost-wise, the 2EDL8024GXUMA1’s dual-driver integration may reduce BOM cost in half-bridge designs compared to using two single-channel drivers. The 1EDN7136GXTMA1’s specialized GaN compatibility and faster switching may command a premium but are necessary where those features matter.
Firmware-wise, both devices use non-inverting inputs and are functionally simple, but 2EDL8024GXUMA1’s dual channels require coordinating two signals and dead-time control externally, while 1EDN7136GXTMA1 is simpler to drive as a single channel.
Use-case fit
Choose 2EDL8024GXUMA1 when…
- Designing a half-bridge driver for N-channel MOSFETs operating up to 90 V bootstrap voltage.
- You need high peak gate current (4 A) to minimize MOSFET switching losses at moderate frequencies (e.g., 100–500 kHz).
- Minimizing component count is important by integrating both high-side and low-side drivers in one IC.
- The target voltage supply rail is 8–17 V, typical for most MOSFET gate drive circuits.
- You require robust thermal margin and can accommodate 45 ns switching speed.
Choose 1EDN7136GXTMA1 when…
- Driving single high-side GaN FETs or MOSFETs requiring ultra-fast switching (5.5 ns rise/fall times).
- Operating with bootstrap voltages up to 200 V, e.g., in high-voltage power supplies or automotive applications.
- Using gate drive voltages below 11 V, especially in lower-voltage GaN systems.
- The application involves high-frequency switching (several MHz) where switching losses dominate.
- You want to drive GaN devices with dedicated gate drive characteristics, benefiting from the tailored IC.
Drop-in compatibility
These two devices are not pin- or footprint-compatible. The 2EDL8024GXUMA1 comes in an 8-pin VDFN package with dual drivers supporting high-side and low-side, while the 1EDN7136GXTMA1 is a single-channel high-side driver in a 10-pin VFDFN package. Substituting one for the other requires redesigning the PCB footprint and reworking the gate drive topology—there is no direct drop-in replacement scenario.
Alternatives to consider
- IR2110 (International Rectifier): Classic high-side/low-side driver with robust features, but slower switching speeds and older technology.
- UCC37322 (Texas Instruments): Dual MOSFET driver with 9 A peak current, useful when very high drive current is needed for large MOSFET gates.
- LTC7001 (Analog Devices): High-voltage, high-side driver with integrated level shifting, suitable for bootstrap voltages above 100 V and fast switching speeds.