1EDN7136GXTMA1 vs 1EDI20N12AFXUMA1: Gate Driver IC Comparison for Hardware Engineers

Quick verdict

For high-speed, high-voltage GaN or MOSFET high-side gate driving where fast switching and tight control of rise/fall times are critical, the 1EDN7136GXTMA1 is the better choice due to its 1A source/sink capability and 5.5 ns switching times. For galvanic isolation needs, wider supply voltage range, or operation at elevated temperatures up to 150°C, the 1EDI20N12AFXUMA1 with magnetic coupling and higher voltage tolerance (10–35 V supply) is preferable despite slower switching speeds.

Spec comparison table

Spec1EDN7136GXTMA11EDI20N12AFXUMA1Notes
Channel typeIndependent1 ChannelBoth single channel; no difference.
Current peak output source/sink1A / 1ANot specified1EDN7136GXTMA1 explicitly rated 1A peak source/sink current, important for fast switching and driving larger gate charge.
Driven configurationHigh-SideNot explicitly stated1EDN7136GXTMA1 is specifically high-side driver; 1EDI20N12AFXUMA1 is magnetic coupling-based, typically isolated.
Gate typeGaN FET, MOSFET (N-Channel)Not specified1EDN7136GXTMA1 optimized for GaN and N-MOSFET; 1EDI20N12AFXUMA1 likely more generic.
High-side voltage max bootstrap200 VNot specified1EDN7136GXTMA1 supports bootstrap voltages up to 200 V, useful in high-voltage applications.
Input typeNon-InvertingNot specified1EDN7136GXTMA1 input is non-inverting; 1EDI20N12AFXUMA1 input type not given.
Logic voltage (V_IL, V_IH)Not specifiedNot specifiedInsufficient data to compare logic thresholds; important for interface compatibility.
Mounting typeSurface MountSurface MountBoth SMT; no difference.
Number of drivers11Both single channel.
Operating temperature range-40°C to 125°C (TJ)-40°C to 150°C (TJ)1EDI20N12AFXUMA1 supports higher junction temperature, beneficial for harsh environments.
Package / case10-VFDFN Exposed Pad8-SOIC (3.90 mm width)1EDN7136GXTMA1 has exposed pad for better thermal dissipation; 1EDI20N12AFXUMA1 in standard SOIC.
Rise / fall time (typical)5.5 ns / 5.5 ns10 ns / 9 ns1EDN7136GXTMA1 has significantly faster switching edges, important for efficiency and EMI.
Supplier device packagePG-VSON-10-4PG-DSO-8-51Different package types; affects PCB layout and thermal management.
Voltage supply4.2 V to 11 V10 V to 35 V1EDI20N12AFXUMA1 supports higher supply voltage, enabling compatibility with higher voltage rails.
TechnologyIntegrated gate driver ICMagnetic Coupling1EDN7136GXTMA1 is integrated driver; 1EDI20N12AFXUMA1 uses magnetic isolation, providing galvanic isolation benefits.

Design trade-offs

The 1EDN7136GXTMA1 targets high-speed, high-side gate driving of GaN and MOSFET switches with a focus on low propagation delays and fast rise/fall times of 5.5 ns, which reduce switching losses and improve efficiency in high-frequency power conversion. Its 1A peak output current capability means it can rapidly charge and discharge gate capacitances, critical for GaN devices with low gate charge but stringent switching requirements. The exposed pad 10-VFDFN package aids thermal management, limiting junction temperature rise during high-frequency operation.

In contrast, the 1EDI20N12AFXUMA1 uses magnetic coupling technology to provide galvanic isolation between input and output stages. This isolation removes the need for bootstrap circuits or isolated power supplies for the driver, simplifying designs requiring isolation, such as in medical, industrial, or automotive applications. However, this comes at the cost of slower rise/fall times (9–10 ns typical), which can increase switching losses and EMI in fast-switching topologies. The absence of specified peak output current suggests it may not be optimized for driving the lowest gate charge devices at high switching speeds.

Thermally, the 1EDI20N12AFXUMA1 supports operation up to 150°C, which is advantageous in harsh environments or designs with limited cooling. The 8-SOIC package, however, offers less effective thermal dissipation than the exposed pad VFDFN of the 1EDN7136GXTMA1, potentially requiring derating or additional thermal design considerations.

Voltage supply requirements differ significantly: the 1EDN7136GXTMA1 works from 4.2 to 11 V, which aligns well with standard bootstrap supplies and logic rails, whereas the 1EDI20N12AFXUMA1 requires 10 to 35 V supply, typically necessitating isolated or dedicated power rails. This must be accounted for in the power supply design.

From a PCB layout perspective, the 1EDN7136GXTMA1 demands careful attention to minimize parasitic inductance around the gate drive loop to fully leverage its fast switching capability and avoid voltage overshoot or ringing, which can damage GaN devices. The 1EDI20N12AFXUMA1’s magnetic coupling reduces common-mode noise coupling but requires placement considerations to avoid interference with other magnetic components.

Cost-wise, magnetic coupling drivers like the 1EDI20N12AFXUMA1 tend to be more expensive per unit due to isolation technology, and their larger package increases PCB real estate. The 1EDN7136GXTMA1 is likely more cost-effective in volume for non-isolated applications, especially where high switching speed is required.

Use-case fit

Choose 1EDN7136GXTMA1 when…

Choose 1EDI20N12AFXUMA1 when…

Drop-in compatibility

There is no indication these two devices are pin-compatible or footprint-compatible. The 1EDN7136GXTMA1 is supplied in a 10-pin PG-VSON-10-4 package with an exposed pad, while the 1EDI20N12AFXUMA1 comes in an 8-pin SOIC package. This difference in pin count and package type means substitution requires PCB redesign and verification of functional equivalence beyond pinout, including supply voltage and isolation requirements.

Alternatives to consider