Comparison of Infineon 1EDN7116GXTMA1 vs 2EDL8024GXUMA1 High-Side Gate Drivers
Quick verdict
For high-voltage, single-channel GaN or MOSFET high-side gate driving up to 200 V bootstrap, the 1EDN7116GXTMA1 excels with its fast 3 ns rise/fall times and 2 A peak drive current, making it ideal for high-speed, high-voltage GaN applications. Conversely, the 2EDL8024GXUMA1 is better suited for dual-channel high- and low-side MOSFET drive at moderate voltages (up to 90 V bootstrap), offering stronger drive strength (4 A peak) but slower switching edges (45 ns rise/fall time), fitting applications requiring robust drive current and half-bridge configurations.
Spec comparison table
| Spec | 1EDN7116GXTMA1 | 2EDL8024GXUMA1 | Notes |
|---|---|---|---|
| Channel type | Independent | Independent | Both offer independent channels; 1EDN7116GXTMA1 has 1 channel, 2EDL8024GXUMA1 has 2 |
| Number of drivers | 1 | 2 | 2EDL8024GXUMA1 supports high- and low-side drive in one IC; 1EDN7116GXTMA1 is single channel |
| Driven configuration | High-Side | High-Side, Low-Side | 2EDL8024GXUMA1 supports half-bridge applications; 1EDN7116GXTMA1 only high-side |
| Gate type | GaN FET, MOSFET (N-Channel) | MOSFET (N-Channel) | 1EDN7116GXTMA1 explicitly supports GaN, useful for GaN-specific drive |
| Peak output current (source/sink) | 2 A / 2 A | 4 A / 4 A | 2EDL8024GXUMA1 provides twice the peak drive current, beneficial for large gate charge or fast switching |
| High-side max bootstrap voltage | 200 V | 90 V | 1EDN7116GXTMA1 supports over twice the bootstrap voltage, enabling higher voltage rails |
| Input type | Non-Inverting | Non-Inverting | Both have non-inverting inputs |
| Voltage supply range | 4.2 V ~ 11 V | 8 V ~ 17 V | 1EDN7116GXTMA1 supports lower supply voltages, allowing flexibility with lower voltage rails |
| Rise/fall time (typical) | 3 ns / 3 ns | 45 ns / 45 ns | 1EDN7116GXTMA1 switches ~15x faster, critical for high-frequency or low switching losses |
| Operating temperature (TJ) | -40°C ~ 125°C | -40°C ~ 125°C | Both support same operating temperature range |
| Package | PG-VSON-10-4 (10-VFDFN Exposed Pad) | PG-VDSON-8-4 (8-VDFN Exposed Pad) | 1EDN7116GXTMA1 has a slightly larger package with more pins |
| Mounting type | Surface Mount | Surface Mount | Both surface mount |
| Digikey programmable | Not Verified | Not Verified | No programmable options verified for either |
Design trade-offs
The most striking difference between these devices is the target application and driving capability. The 1EDN7116GXTMA1 is optimized for high-speed, high-voltage GaN or MOSFET high-side drive with its 200 V bootstrap tolerance and extremely fast 3 ns switching edges. This translates directly to lower switching losses and better efficiency in high-frequency designs (e.g., >1 MHz GaN-based DC-DC converters). The 2 A peak source/sink current is adequate for typical GaN gate charges but may limit edge speed under heavier gate charge loads.
The 2EDL8024GXUMA1, by contrast, doubles the peak drive current to 4 A, which benefits driving larger MOSFETs with higher gate charge and lower R_DS(on). However, its 45 ns rise/fall times are an order of magnitude slower, increasing switching losses and EMI concerns at high frequencies. The dual-channel architecture (high- and low-side) simplifies half-bridge design, reducing component count and layout complexity.
Voltage supply ranges reflect different design goals: 1EDN7116GXTMA1 can operate down to 4.2 V supply, which may ease interfacing with low-voltage logic rails, while 2EDL8024GXUMA1 requires a higher minimum supply of 8 V, consistent with traditional MOSFET gate drive rails. The higher bootstrap voltage rating of 1EDN7116GXTMA1 (200 V vs 90 V) is critical for high-voltage applications, such as automotive or industrial systems operating above 100 V.
Thermal considerations favor the 2EDL8024GXUMA1 for large MOSFETs needing strong gate drive current, but its slower edges may increase switching loss and thermal dissipation overall. The 1EDN7116GXTMA1’s faster switching edges reduce switching loss but may require more careful layout for EMI and ringing mitigation, especially since GaN FETs are sensitive to gate drive voltage and slew rates.
From a layout perspective, the 1EDN7116GXTMA1’s 10-pin PG-VSON package offers more pins for additional functions or flexible routing compared to the 8-pin 2EDL8024GXUMA1. However, the 2EDL8024GXUMA1’s integrated high- and low-side drivers reduce the total component count and PCB area for half-bridge topologies.
Cost at volume is not provided here, but generally, single-channel GaN-capable drivers like 1EDN7116GXTMA1 may command a premium due to their specialized nature, while the 2EDL8024GXUMA1 targets broader MOSFET applications and may be more cost-effective in multi-channel designs.
Use-case fit
Choose 1EDN7116GXTMA1 when…
- Designing a high-frequency (≥1 MHz) GaN-based DC-DC converter requiring ultra-fast 3 ns switching edges to minimize switching losses.
- Operating with bootstrap voltages up to 200 V, such as in automotive or industrial high-voltage rails.
- Driving N-channel GaN FETs or MOSFETs where precise fast gate control is critical to avoid device stress.
- Working from a low gate driver supply voltage (4.2 V minimum) compatible with low-voltage logic interfaces.
- Prioritizing single high-side drive with minimal component count and flexible pin options.
Choose 2EDL8024GXUMA1 when…
- Implementing a half-bridge topology that requires both high-side and low-side drivers integrated in one IC.
- Driving larger MOSFET gates with higher gate charge requiring 4 A peak source/sink current for adequate edge rates.
- Operating bootstrap voltage is limited to 90 V or below, typical in lower-voltage motor drives or power supplies.
- The switching frequency is moderate and the slower 45 ns rise/fall times are acceptable for EMI and switching loss budgets.
- A higher supply voltage (8 V minimum) is available and preferable for robust MOSFET gate drive.
Drop-in compatibility
There is no indication these parts are pin-compatible or footprint-compatible. The 1EDN7116GXTMA1 uses a 10-pin PG-VSON package, while the 2EDL8024GXUMA1 has an 8-pin PG-VDSON package. The pin count and package outline differences mean a direct substitution on the same PCB footprint is not possible without layout changes. Additionally, the 2EDL8024GXUMA1 provides dual channels and requires different wiring for high- and low-side, unlike the single high-side 1EDN7116GXTMA1.
Because the supply voltage ranges and bootstrap voltage ratings differ substantially, substituting one IC for the other without redesigning the power stage and supporting components is not recommended.
Alternatives to consider
- 1EDN7523GXTMA1 (Infineon): Single-channel high-side driver with integrated bootstrap diode, suitable for GaN and MOSFET gates, offering simplified bootstrap circuitry.
- UCC37322 (Texas Instruments): Dual high-current MOSFET driver with 4 A source/sink, popular for half-bridge gate drive, but with slower switching edges.
- IR2110 (Infineon): Classic high- and low-side driver with wide input voltage range, suitable for general-purpose half-bridge power stages, though slower switching speeds.