UM6K33NTN vs UF3C170400K3S: Component Comparison for Power Electronics Engineers
Quick verdict
For low-voltage, low-current switching applications requiring ultra-compact, dual MOSFET arrays with logic-level gate drive, the UM6K33NTN is the practical choice. Conversely, for high-voltage, high-current power conversion or motor drive circuits where robustness and high power dissipation are critical, the UF3C170400K3S is the only viable option among these two due to its 1700 V rating and 7.6 A current capability.
Spec comparison table
| Spec | UM6K33NTN | UF3C170400K3S | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | Single N-Channel | UM6K33NTN integrates two MOSFETs, useful for compact dual-switch designs. |
| Continuous drain current @ 25°C | 0.2 A | 7.6 A (Tc) | UF3C170400K3S supports nearly 40x higher current, critical for power applications. |
| Drain-source voltage max | 50 V | 1700 V | UF3C170400K3S’s 1700 V rating enables high-voltage applications; UM6K33NTN limited to 50 V. |
| Gate drive voltage | Logic level, 1.2 V drive | 12 V nominal drive | UM6K33NTN works with low-voltage logic signals; UF3C170400K3S requires higher gate drive. |
| Gate charge (Qg) | Not specified | 27.5 nC @ 15 V | UF3C170400K3S has substantial gate charge, impacting switching losses and gate driver sizing. |
| Input capacitance (Ciss) | 25 pF @ 10 V | 740 pF @ 100 V | UM6K33NTN’s input capacitance is ~30x lower, benefiting high-speed switching at low voltage. |
| Mounting type | Surface mount (UMT6) | Through hole (TO-247-3) | UM6K33NTN is better for compact PCB layouts; UF3C170400K3S’s through-hole favors heat sinking. |
| Operating temperature range | Up to 150°C (TJ) | -55°C to 175°C (TJ) | UF3C170400K3S supports wider and higher temperature range, useful in harsher environments. |
| Package/case | 6-TSSOP, SC-88, SOT-363 | TO-247-3 | Smaller package for UM6K33NTN; larger TO-247 allows better thermal management for UF3C170400K3S. |
| Power dissipation max | 120 mW | 100 W (Tc) | UF3C170400K3S handles orders of magnitude higher power dissipation. |
| Rds(on) max | 2.2 Ω @ 200 mA, 4.5 V | 515 mΩ @ 5 A, 12 V | UF3C170400K3S has much lower on-resistance relative to current rating, critical for efficiency. |
| Technology | MOSFET (Metal Oxide) | SiCFET (Cascode SiCJFET) | UF3C170400K3S’s SiC technology offers better high-voltage, high-temperature performance. |
| Gate threshold voltage (Vgs_th) | 1 V @ 1 mA | 6 V @ 10 mA | UM6K33NTN turns on at lower gate voltage, suitable for logic-level drive; UF3C170400K3S needs higher gate voltage. |
Design trade-offs
The UM6K33NTN is a dual N-channel MOSFET array optimized for low-voltage, low-current switching with logic-level gate drive. Its extremely low input capacitance (25 pF) and low gate threshold (1 V) make it ideal for fast switching in low-power digital circuits or signal-level applications. However, its high Rds(on) of 2.2 Ω at only 200 mA means it cannot conduct significant current without excessive conduction losses or thermal stress. Its small 6-TSSOP surface-mount package simplifies PCB layout in compact designs but limits power dissipation to 120 mW, requiring careful thermal design even at low currents.
In contrast, the UF3C170400K3S is a single high-voltage SiC MOSFET in a through-hole TO-247 package designed for demanding power applications. Its 1700 V rating and 7.6 A continuous current capability at 100 W dissipation make it suitable for switch-mode power supplies, motor drives, and industrial converters. The SiCFET cascode technology balances high-voltage blocking with relatively low gate charge (27.5 nC) compared to typical Si IGBTs at similar voltage. However, the high input capacitance (740 pF) and required 12 V gate drive voltage necessitate a robust gate driver capable of sourcing several amps briefly to switch efficiently. The TO-247 package facilitates heat sinking, which is mandatory given the power levels involved.
From a layout perspective, the UM6K33NTN’s small footprint benefits dense, low-power boards but limits heat dissipation. Its logic-level gate drive simplifies interfacing with microcontrollers or FPGAs without additional gate driver ICs. The UF3C170400K3S, conversely, demands larger PCB real estate for mounting and heat sinks, and careful gate driver design to manage switching losses and prevent device stress. Thermal management is critical for the SiC device to maintain 175°C junction rating reliability.
Cost at volume is likely to be significantly different. UM6K33NTN, being a small dual MOSFET array, is generally inexpensive and widely available for consumer electronics and signal switching. The UF3C170400K3S, a specialized high-voltage SiC MOSFET, will be considerably more expensive due to its SiC technology and packaging, justified only in high-voltage or high-efficiency power conversion applications.
Use-case fit
Choose UM6K33NTN when…
- Implementing low-voltage (≤50 V) digital load switches or level shifters requiring dual MOSFETs in a compact footprint.
- Switching low-current analog signals or sensor inputs where minimal PCB area and logic-level drive are essential.
- Designing battery-powered or handheld devices where low gate drive voltage and minimal gate capacitance reduce power consumption.
- Adding dual MOSFETs for load multiplexing or simple power path control in space-constrained surface-mount designs.
- Integrating MOSFET switches directly driven from microcontroller GPIO pins without external drivers.
Choose UF3C170400K3S when…
- Building high-voltage (≥600 V) power converters, such as off-line power supplies or motor drives, requiring rugged 1700 V blocking capability.
- Designing circuits with continuous currents in the ampere range (up to 7.6 A), needing low conduction losses at high current.
- Applications demanding high power dissipation (up to 100 W) with effective heat sinking and thermal management.
- Using SiC technology benefits like higher operating temperature (up to 175°C), faster switching, and improved efficiency at high voltage.
- Developing industrial or automotive power systems where robustness and long-term reliability under harsh conditions are critical.
Drop-in compatibility
These two devices are not pin-compatible or footprint-compatible. The UM6K33NTN is a surface-mount dual MOSFET array in a 6-TSSOP/SC-88 (SOT-363) package, while the UF3C170400K3S is a single MOSFET in a large through-hole TO-247-3 package. Substituting one for the other would require significant PCB redesign, including changes in gate drive circuitry, thermal management, and mechanical mounting. Additionally, their voltage, current, and gate drive characteristics differ drastically, making direct substitution impractical without redesigning the drive and protection components.
Alternatives to consider
- BSS138 (NXP, ON Semiconductor): A single low-voltage, logic-level N-channel MOSFET with similar gate threshold and package size, good for small-signal switching.
- STP55NF06L (STMicroelectronics): A 60 V, 50 A N-channel MOSFET in TO-220 package, suitable for medium-power, low-voltage applications bridging the gap between UM6K33NTN and UF3C170400K3S.
- C3M0065090D (Wolfspeed): A 900 V SiC MOSFET with low gate charge and Rds(on), designed for high-efficiency power conversion, as a modern alternative to UF3C170400K3S for applications needing slightly lower voltage.