UM6K33NTN vs TB67B008FTG,EL Component Comparison
Quick verdict
For low-current, low-voltage switching where minimal PCB area and simple logic-level drive are critical, the UM6K33NTN is the better fit due to its compact dual MOSFET array and 1.2V gate drive logic compatibility. Conversely, for motor driver applications requiring integrated half-bridge stages capable of driving up to 3A with PWM control, the TB67B008FTG,EL offers far superior functionality and power handling, making it the clear choice.
Spec comparison table
| Spec | UM6K33NTN | TB67B008FTG,EL | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel MOSFETs (Dual) | Fully integrated driver + power MOSFET half-bridges (3 half-bridges) | TB67B008FTG,EL includes driver and power stage; UM6K33NTN is just MOSFET array. |
| Continuous Drain Current (Id) @ 25°C | 200mA | 3A | TB67B008FTG,EL supports 15x higher current, suitable for power applications. |
| Max Drain-Source Voltage (Vds) | 50V | 22V | UM6K33NTN supports higher voltage, useful for 12V and 24V rails; TB67B008FTG limited to 22V max. |
| Fet Feature / Gate Drive | Logic Level Gate, 1.2V drive | Integrated driver, PWM interface | UM6K33NTN can be driven directly from low-voltage logic; TB67B008FTG requires PWM control signals. |
| Gate Charge (Qg) | Not specified | Not specified | Not available; TB67B008FTG internal driver hides gate charge considerations. |
| Input Capacitance (Ciss) | 25pF @ 10V | Not specified | UM6K33NTN low input capacitance aids high-speed switching at low current. |
| Mounting Type | Surface Mount (UMT6) | Surface Mount (24-WQFN 4x4mm) | Both SMT; TB67B008FTG package larger but with exposed pad for thermal dissipation. |
| Operating Temperature Range | Up to 150°C (junction temp) | -40°C to 105°C (ambient temp) | UM6K33NTN rated for higher TJ, better for harsh thermal environments; TB67B008FTG limited to 105°C TA. |
| Maximum Power Dissipation | 120mW | Not specified | UM6K33NTN power limited to 120mW; TB67B008FTG specs suggest higher power capability. |
| Rds(on) @ 200mA, 4.5V Vgs | 2.2Ω | Not specified | UM6K33NTN Rds(on) high at 2.2Ω but at very low current; TB67B008FTG on-resistance unspecified but implied low. |
| Package | 6-TSSOP / SC-88 / SOT-363 (UMT6) | 24-WQFN (4x4mm) with exposed pad | TB67B008FTG larger package with thermal pad; UM6K33NTN much smaller footprint. |
| Technology | MOSFET (Metal Oxide) | Power MOSFET + integrated driver | TB67B008FTG integrates power stage and control; UM6K33NTN is discrete MOSFET array. |
| Vgs Threshold (max) @ 1mA | 1V | Not specified | UM6K33NTN logic-level threshold suitable for direct MCU drive; TB67B008FTG internal driver abstracts this. |
| Voltage Supply / Load | N/A (MOSFET only) | 5.5V to 22V | TB67B008FTG designed for 5.5–22V motor supply; UM6K33NTN can handle up to 50V on drain. |
Design trade-offs
The UM6K33NTN is a compact dual N-channel MOSFET array optimized for low-current switching applications up to 200mA continuous drain current and 50V maximum drain-source voltage. It is ideal where space and straightforward logic-level drive (1.2V gate drive threshold) are priorities. Its relatively high Rds(on) of 2.2Ω at 200mA means it is not suited to power-intensive applications, and its power dissipation limit of 120mW restricts continuous high-power operation. The low input capacitance (25pF) enables efficient switching with minimal driver losses at low currents.
In contrast, the TB67B008FTG,EL integrates three half-bridge power MOSFET stages with a dedicated PWM motor driver interface, designed explicitly for brushless DC (BLDC) motor control. It supports output currents up to 3A, a 15x increase over the UM6K33NTN, making it suitable for medium-power motor drive applications. The operating voltage range of 5.5V to 22V aligns with common motor supply rails, but the maximum voltage rating is lower than UM6K33NTN’s 50V, limiting its use in higher-voltage systems. The 24-WQFN package with an exposed thermal pad facilitates heat dissipation, critical at higher currents, while UM6K33NTN’s smaller 6-TSSOP-like package lacks this thermal management capability.
From a layout perspective, the UM6K33NTN is simpler: it requires only gate drive signals and can be placed in tight spaces. The TB67B008FTG,EL, due to its integrated driver and power stage, needs careful attention to power ground, thermal vias, and decoupling capacitors to handle high transient currents and maintain stability in PWM operation. Firmware must provide PWM control signals for the TB67B008FTG,EL, whereas the UM6K33NTN can be switched on/off via simple GPIO pins.
Cost-wise, UM6K33NTN is likely cheaper per unit due to simpler functionality and smaller package. TB67B008FTG,EL demands a more complex PCB and firmware but reduces bill-of-materials by combining driver and power MOSFETs in a single chip.
Use-case fit
Choose UM6K33NTN when…
- You need a small-footprint, low-current (≤200mA) high-voltage (up to 50V) MOSFET switch for signal-level or load switching.
- Your design requires direct drive from low-voltage logic (1.2V gate drive threshold) without additional driver ICs.
- You have strict thermal constraints and cannot dissipate more than 120mW per device.
- Your system operates in harsh thermal environments, potentially up to 150°C junction temperature.
- You want to minimize BOM cost and PCB area for simple switching tasks without integrated control.
Choose TB67B008FTG,EL when…
- You are designing a BLDC motor driver or similar PWM-driven motor control system requiring integrated driver and power stage.
- Your application demands continuous output current up to 3A at 5.5–22V supply voltage.
- You need a half-bridge configuration with integrated control logic to simplify firmware and hardware design.
- Thermal management is feasible with exposed pad packages and PCB heat sinking.
- Your control scheme relies on PWM signals and you prefer a single-chip motor driver solution to reduce component count.
Drop-in compatibility
These two parts are not pin-compatible or footprint-compatible. The UM6K33NTN is a small dual MOSFET array in a 6-pin UMT6 package, whereas the TB67B008FTG,EL is a 24-pin WQFN with integrated driver circuitry. Substituting one for the other requires significant schematic, PCB, and firmware redesign. The TB67B008FTG,EL cannot serve as a direct MOSFET replacement in circuits designed for the UM6K33NTN, nor vice versa.
Alternatives to consider
- IRLML6344 (Infineon): Logic-level N-channel MOSFET with low Rds(on) suitable for low-voltage, low-current switching applications similar to UM6K33NTN.
- DRV8313 (Texas Instruments): Integrated 3-phase BLDC motor driver with power MOSFETs offering similar functionality to TB67B008FTG,EL but with different voltage/current ratings and feature set.
- AO3400A (Alpha & Omega Semiconductor): Single N-channel MOSFET with low Rds(on) and logic-level drive, useful for discrete MOSFET replacement in low-power designs.