UM6K33NTN vs TB6612FNG,C,8,EL: Component Comparison for Hardware Engineers
Quick verdict
For low-current, general-purpose switching or signal-level load control up to 200mA at voltages up to 50V, the UM6K33NTN is the better choice due to its simple dual N-channel MOSFET array with logic-level gate drive. For integrated brushed DC motor control up to 1A with built-in half-bridge drivers and control logic, the TB6612FNG,C,8,EL is preferable as it provides a complete motor driver solution, simplifying system design.
Spec comparison table
| Spec | UM6K33NTN | TB6612FNG,C,8,EL | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel MOSFET (Dual) | 4 Half-Bridge (Power MOSFET) | TB6612FNG integrates full bridges with control; UM6K33NTN is just dual MOSFETs. |
| Continuous Drain Current (Id @ 25°C) | 200mA | 1A | TB6612FNG supports 5x higher continuous current, enabling higher power loads. |
| Drain-Source Voltage Max (Vds) | 50V | 13.5V | UM6K33NTN supports higher voltage, suitable for higher voltage loads or supply rails. |
| FET Feature | Logic Level Gate, 1.2V Drive | Integrated driver logic | UM6K33NTN needs only 1.2V gate drive; TB6612FNG includes gate drive and control logic. |
| Gate Charge (Qg) Max | Not specified | Not specified | No direct comparison possible; gate charge impacts switching speed and drive losses. |
| Input Capacitance (Ciss max) | 25pF @ 10V | Not specified | Low input capacitance favors faster switching with low gate drive current; UM6K33NTN wins. |
| Mounting Type | Surface Mount | Surface Mount | Both are SMT, standard for compact board layouts. |
| Operating Temperature Range | Up to 150°C (TJ) | -20°C to 85°C (TA) | UM6K33NTN supports much higher junction temperature; better for high-temp or harsh environments. |
| Package Case | 6-TSSOP (UMT6) | 24-LSSOP | UM6K33NTN is a small 6-pin device; TB6612FNG is larger with 24 pins due to integrated logic. |
| Power Dissipation Max | 120mW | Not specified | UM6K33NTN limited to low power dissipation; TB6612FNG can handle higher power via integration. |
| On-Resistance (Rds(on)) @ 200mA, 4.5V | 2.2Ω | Not specified | UM6K33NTN’s Rds(on) is relatively high, limiting efficiency at higher currents. |
| Supplier Device Package | UMT6 | 24-SSOP | Different footprints; affects PCB layout and space. |
| Technology | MOSFET (Metal Oxide) | Power MOSFET | Both MOSFET-based, but TB6612FNG integrates control circuitry. |
| Vgs Threshold Max @ 1mA | 1V | Not specified | UM6K33NTN has a low threshold; useful for low-voltage logic drive. |
| Voltage Load Range | Up to 50V | 2.5V to 13.5V | UM6K33NTN supports higher voltages; TB6612FNG limited to typical logic/motor voltages. |
| Voltage Supply Range | Not specified | 2.7V to 5.5V | TB6612FNG requires regulated supply; UM6K33NTN is passive MOSFET array. |
| Output Configuration | N-Channel MOSFET Array | Half Bridge (4) | TB6612FNG offers full H-bridge outputs for motor control; UM6K33NTN is simpler MOSFETs. |
Design trade-offs
The UM6K33NTN is essentially a dual logic-level N-channel MOSFET array with a relatively modest continuous current rating of 200mA and a high Rds(on) of 2.2Ω at 4.5V gate drive. This implies it is best suited for low-current switching applications or level-shifting loads in circuits where voltage can be as high as 50V. Its small 6-pin footprint (UMT6) and high maximum junction temperature (150°C) allow for compact, thermally robust designs in harsh environments. However, the high on-resistance severely limits efficiency and power dissipation, making it unsuitable for loads requiring significant current or power.
In contrast, the TB6612FNG,C,8,EL is a fully integrated motor driver IC with four half-bridge outputs capable of delivering up to 1A continuous current, albeit at a maximum load voltage of 13.5V. This device integrates both power MOSFETs and control logic, simplifying driver design and firmware complexity. The built-in control logic and parallel interface reduce external component count and development time but come with a larger 24-pin LSSOP footprint. The operating temperature range is limited to 85°C ambient, which may require thermal management in high current or high ambient temperature scenarios. The drive voltage range (2.7V to 5.5V) fits well with typical microcontroller logic levels, but the maximum voltage load is limited, restricting its use to low-voltage motor or load drives.
From a layout perspective, the UM6K33NTN’s small package and simple pinout make it easy to place near the load or signal source, minimizing parasitic inductances and capacitances. The TB6612FNG requires careful thermal and power layout considerations because of its higher current handling and integrated power stage. Its larger package increases PCB area consumption but reduces BOM complexity by integrating the driver stage.
Efficiency considerations are significant: the UM6K33NTN’s high Rds(on) at low current means power dissipation can be a limiting factor even at 200mA loads (P = I² * R = 0.2² * 2.2 = 88mW, close to the 120mW max). The TB6612FNG, designed for motor control, typically has lower Rds(on) internal MOSFETs optimized for higher currents, but exact values are not specified. The integrated driver reduces switching losses and eases gate drive design as the internal circuitry manages gate voltage and timing.
Cost-wise, the UM6K33NTN will generally be cheaper per unit due to its simpler structure and smaller package, but using multiple devices to replicate TB6612FNG’s functionality quickly negates this advantage. The TB6612FNG’s integration reduces total system cost by minimizing external parts and development effort, which often outweighs the higher per-unit cost.
Use-case fit
Choose UM6K33NTN when…
- You need a small, low-current dual N-channel MOSFET array for signal-level switching or load switching up to 50V and 200mA.
- Your design requires operation at elevated junction temperatures (up to 150°C) or in harsh thermal environments.
- You want minimal external components with a tiny 6-pin footprint for compact PCB real estate.
- Your load voltage is above 13.5V, beyond the TB6612FNG’s maximum load voltage.
- You need simple MOSFETs for level shifting, load switching, or low-current power control without integrated logic.
Choose TB6612FNG,C,8,EL when…
- You are designing a brushed DC motor driver requiring up to 1A continuous current with integrated half-bridge outputs.
- Your system voltage is within 2.5V to 13.5V, matching typical motor voltages.
- You want to simplify firmware and hardware by using an integrated driver with built-in control logic and parallel interface.
- Minimizing external MOSFETs and gate-drive circuitry is a priority to reduce BOM and development time.
- Your design can accommodate the larger 24-pin package and manage thermal dissipation at elevated current loads.
Drop-in compatibility
These devices are not pin-compatible or footprint-compatible. The UM6K33NTN is a small 6-pin MOSFET array in a UMT6 package, while the TB6612FNG,C,8,EL is a 24-pin LSSOP IC integrating power MOSFETs and control logic. Substituting one for the other requires significant PCB redesign and firmware adaptation. The UM6K33NTN lacks integrated driver logic, so replacing a TB6612FNG with it would necessitate adding external driver circuitry and control logic. Conversely, replacing UM6K33NTN with TB6612FNG is impractical unless the application is motor control and the system voltage/current requirements match the TB6612FNG’s limits.
Alternatives to consider
- Si2302DS (Vishay): Logic-level N-channel MOSFET with low Rds(on) and small SOT-23 package, suitable for low-voltage, low-current switching.
- DRV8833 (Texas Instruments): Dual H-bridge motor driver with similar current rating to TB6612