UM6K33NTN vs SQ1912AEEH-T1_GE3 MOSFET Array Comparison
Quick verdict
For low-voltage, higher-current switching up to 20 V and currents near 1 A, the Vishay SQ1912AEEH-T1_GE3 delivers significantly better RDS(on) and power handling, making it the preferred choice for load switching and power distribution in automotive-grade applications. The Rohm UM6K33NTN, with its 50 V rating and very low continuous current (200 mA), suits low-current signal switching and level shifting where voltage margin and ultra-low gate drive voltage (1.2 V logic-level) are critical.
Spec comparison table
| Spec | UM6K33NTN | SQ1912AEEH-T1_GE3 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Equivalent configuration |
| Continuous drain current (ID @ 25°C) | 200 mA | 800 mA (Tc) | SQ1912AEEH-T1_GE3 supports 4x higher current, better for power applications |
| Maximum drain-source voltage (VDS) | 50 V | 20 V | UM6K33NTN supports higher voltage margin |
| Maximum power dissipation | 120 mW | 1.5 W | SQ1912AEEH-T1_GE3 can dissipate 12.5x more power |
| RDS(on) max (at ID, VGS) | 2.2 Ω @ 200 mA, 4.5 V | 0.28–0.51 Ω @ 1.2A, 4.5 V | SQ1912AEEH-T1_GE3 has dramatically lower RDS(on), reducing conduction losses |
| Gate threshold voltage (VGS(th)) max | 1 V @ 1 mA | 1.5 V @ 250 µA | UM6K33NTN has slightly lower threshold, better for low-voltage gate drive |
| Input capacitance (Ciss) max | 25 pF @ 10 V | 27 pF @ 10 V | Comparable gate input capacitance |
| Total gate charge (Qg) max | Not specified | 1.25 nC @ 4.5 V | SQ1912AEEH-T1_GE3 provides explicit gate charge; low value aids switching speed |
| Maximum gate voltage | Not specified | ±12 V | SQ1912AEEH-T1_GE3 rated for wider gate voltage swings |
| Operating temperature range (TJ) | Up to 150°C | -55°C to 175°C | SQ1912AEEH-T1_GE3 rated for wider industrial/automotive temperature range |
| Package | 6-TSSOP, SC-88, SOT-363 (UMT6) | SC-70-6 | SQ1912AEEH-T1_GE3 in smaller SC-70-6, better for space-constrained designs |
| Power dissipation (min) | Not specified | 0.5 W | SQ1912AEEH-T1_GE3 minimum power rating higher |
| Diode forward voltage (typ/max) | Not specified | 20 mV / 50 mV | SQ1912AEEH-T1_GE3 includes body diode specs, relevant in synchronous rectification |
| Gate resistance (typ/max) | Not specified | 1.5–4.5 kΩ | High gate resistance may limit switching speed or require stronger driver |
| Fall time (typ/min) | Not specified | 487 ns / 390 ns | SQ1912AEEH-T1_GE3 switching speed characterized |
| Qualification | Not specified | AEC-Q101 (Automotive) | SQ1912AEEH-T1_GE3 suited for automotive-grade reliability |
| Supplier device package | UMT6 | SC-70-6 | Different package footprints, not drop-in compatible |
Design trade-offs
The UM6K33NTN targets low-current, higher-voltage switching with a logic-level gate drive threshold as low as 1 V (max 1 V at 1 mA). This makes it suitable for designs driven directly by low-voltage logic, such as 1.2 V or 1.8 V digital outputs, without requiring gate drive boosting. However, its maximum continuous drain current is only 200 mA, and the RDS(on) at 4.5 V is relatively high at 2.2 Ω, which limits its use to low-power signals or very low-current loads.
In contrast, the SQ1912AEEH-T1_GE3 handles 800 mA continuous current (measured at case temperature), with an on-resistance as low as 0.28 Ω at a higher current (1.2 A) and the same 4.5 V gate drive voltage. This yields significantly lower conduction losses in medium-current switching applications. The power dissipation capability (1.5 W max) and automotive-grade temperature range (-55°C to 175°C) suggest this device is designed for robust, high-reliability environments.
From a layout perspective, the SQ1912AEEH-T1_GE3’s SC-70-6 package is smaller and better suited for compact PCB real estate. However, its higher gate resistance (1.5–4.5 kΩ) may slow switching transitions, which designers need to consider in high-frequency or PWM applications. The UM6K33NTN lacks detailed switching specs but benefits from its logic-level gate drive and likely lower gate resistance given the logic-level nature.
Thermally, the SQ1912AEEH-T1_GE3 can dissipate more than 10x the power of the UM6K33NTN, so it can handle higher duty cycles and more aggressive switching without overheating. The UM6K33NTN’s 120 mW power rating severely limits its continuous conduction capability and requires careful thermal design and possibly derating.
Cost-wise, UM6K33NTN parts tend to be simpler, with lower current capability and voltage rating, which might translate to lower unit cost, but this is highly dependent on volume and supplier pricing. The SQ1912AEEH-T1_GE3’s automotive qualification and higher power handling typically come with higher cost but better reliability and ruggedness.
Use-case fit
Choose UM6K33NTN when:
- You need to switch or level-shift low-voltage digital signals with gate drive voltages as low as 1.2 V.
- The load current is very low (under 200 mA) and voltage margin up to 50 V is required.
- Your design prioritizes simplicity in gate drive and minimal external components for signal multiplexing or small load switching.
- Thermal dissipation is limited and power losses must be minimal for low-current scenarios.
- Your application is outside harsh environments where the extended temperature range and automotive qualification are not necessary.
Choose SQ1912AEEH-T1_GE3 when:
- You require switching of medium-load currents up to 800 mA continuous and up to 1.5 W power dissipation.
- Your system operates at 20 V or below, with no need for higher voltage margin.
- Automotive or industrial-grade temperature range (-55°C to 175°C) and AEC-Q101 qualification are mandatory.
- PCB space is constrained and you need a smaller SC-70-6 package footprint.
- You have robust gate drivers able to handle the device’s gate resistance and want characterized switching times for timing-critical firmware.
Drop-in compatibility
The UM6K33NTN uses a UMT6 package (6-TSSOP, SC-88, SOT-363) while the SQ1912AEEH-T1_GE3 is in an SC-70-6 package. These are physically different footprints and pin layouts; therefore, they are not drop-in compatible. Substituting one for the other would require PCB redesign and careful pin mapping validation. The electrical characteristics also differ significantly, so direct substitution without redesign is not recommended.
Alternatives to consider
- Si2312DS (Vishay) – Dual N-channel MOSFET with low RDS(on) and logic-level gate drive, good for low-voltage, low-current switching.
- BSS138 (ON Semiconductor) – Single N-channel MOSFET, widely used for level shifting and low-current switching in a small SOT-23 package.
- IRLML6344 (Infineon) – Logic-level N-channel MOSFET with low RDS(on), suitable for low-voltage gate drive applications with higher current capability.
This comparison highlights that UM6K33NTN and SQ1912AEEH-T1_GE3 serve distinct niches in MOSFET array applications, and design decisions must weigh voltage, current, thermal, and package factors critically.