UM6K33NTN vs SIL2324A-TP MOSFET Array Comparison

Quick verdict

For low-voltage, low-current switching applications with tight gate drive constraints, the UM6K33NTN is the simpler, lower-power choice, excelling in ultra-low gate drive voltage scenarios and low switching losses at currents under 200mA. For higher voltage, higher current switching or load driving up to 2A, the SIL2324A-TP clearly outperforms with its 100V rating, 2A continuous current, and much lower R_DS(on), making it suitable for power rail switching and medium-power load switching.

Spec comparison table

SpecUM6K33NTNSIL2324A-TPNotes
Configuration2 N-Channel (Dual)2 N-Channel (Dual)Equivalent
Continuous drain current (I_D @ 25°C)200 mA2 ASIL2324A-TP supports 10× higher current, critical for higher power applications
Drain-source voltage (V_DS max)50 V100 VSIL2324A-TP has double voltage rating, better for higher voltage rails
Maximum power dissipation120 mW1.5 WSIL2324A-TP can dissipate 12.5× more power, enabling higher current and thermal margins
R_DS(on) @ I_D, V_GS2.2 Ω @ 200 mA, 4.5 V280 mΩ @ 2 A, 10 VSIL2324A-TP’s R_DS(on) is ~8× lower at a much higher current, key for conduction losses
Gate threshold voltage (V_GS_th)1 V @ 1 mA1.5 V (typ) @ 250 µAUM6K33NTN has lower threshold, easier to turn on at low gate voltages
Gate drive voltageLogic level, 1.2 V driveNot specifiedUM6K33NTN is explicitly logic-level, better for low-voltage MCU GPIO drive
Gate charge (Q_g)Not specified4.8 nC @ 4.5 VSIL2324A-TP has significantly higher gate charge, increasing switching losses and gate drive requirements
Input capacitance (C_iss)25 pF @ 10 V520 pF @ 15 VUM6K33NTN’s input capacitance is ~20× lower, reducing gate drive current and switching delay
Package6-TSSOP (UMT6), SC-88, SOT-363SOT-23-6LDifferent packages; affects PCB layout and thermal dissipation
Operating temperature rangeup to 150°C (TJ)-55°C to +150°C (TJ)SIL2324A-TP supports wider ambient temperature range
Power dissipation max120 mW1.5 WSIL2324A-TP can handle significantly more power dissipation
Pulsed drain current maxNot specified8 ASIL2324A-TP supports high surge currents, useful for inductive loads
Diode forward voltageNot specified1.2 V (typ)SIL2324A-TP’s body diode forward voltage specified, relevant for synchronous rectification
Reverse recovery charge/timeNot specified14.7 nC / 19.7 ns (min)SIL2324A-TP provides reverse recovery info, critical in switching loss and EMI considerations
Gate resistance maxNot specified2 ΩSIL2324A-TP’s gate resistance affects switching speed and EMI
Junction-to-ambient thermal resistanceNot specified125 °C/WSIL2324A-TP data allows better thermal design; UM6K33NTN thermal specs not detailed
Zero gate voltage drain currentNot specified1 µA (min)SIL2324A-TP leakage current specified, useful for low-leakage designs
Turn-on/off delay and rise/fall timesNot specified6.3 ns rise, 14.3 ns delay, 4.5 ns fallSIL2324A-TP switching times characterized, important for high-frequency switching

Design trade-offs

The UM6K33NTN is optimized for low current (200mA max) and low voltage (50V max) applications, with a very low input capacitance (25pF) and a low gate threshold voltage of 1V. This makes it ideal where the gate drive voltage is limited—such as directly driven from low-voltage logic or microcontroller GPIO pins without dedicated MOSFET drivers. Its relatively high R_DS(on) of 2.2Ω at 200mA means conduction losses are only acceptable at very low currents, and its maximum power dissipation of 120mW demands careful thermal management if switching near its limits.

In contrast, the SIL2324A-TP supports much higher continuous drain current (2A) and voltage (100V), with a substantially lower R_DS(on) (280mΩ at 2A, 10V gate drive). This results in significantly lower conduction losses in medium-power applications. However, the gate charge is roughly two orders of magnitude higher (4.8nC vs unspecified but likely <1nC for UM6K33NTN), which means increased gate drive losses and slower switching speeds unless driven with a sufficiently strong gate driver. This also means higher switching losses and potentially more EMI if not properly designed.

Thermally, the SIL2324A-TP can dissipate up to 1.5W, which is over 10× the UM6K33NTN’s 120mW rating. This enables use in higher power applications and less stringent thermal derating, but requires a PCB layout capable of heat dissipation from its SOT-23-6 package. The UM6K33NTN’s smaller UMT6 package and lower power dissipation requirements make it easier to use in very compact, low-power designs but limits its use in anything beyond signal-level switching.

From a layout standpoint, the SIL2324A-TP’s much higher input capacitance (520pF) demands careful gate drive design to avoid slow switching transitions and associated losses. The UM6K33NTN’s 25pF input capacitance is easier to drive but comes at the cost of higher conduction losses. The SIL2324A-TP datasheet provides detailed switching timing and reverse recovery parameters, which helps in designing switching regulators or synchronous rectifiers, while the UM6K33NTN datasheet lacks these details, limiting design insight for high-speed operation.

At volume, the UM6K33NTN may have cost advantages due to simpler construction and smaller package, but the need for external gate drivers or level shifters for the SIL2324A-TP can add BOM cost and complexity. Conversely, the SIL2324A-TP’s higher robustness and power capacity can reduce overall system cost by allowing fewer parallel devices or smaller heatsinks.

Use-case fit

Choose UM6K33NTN when…

Choose SIL2324A-TP when…

Drop-in compatibility

These devices are not pin or footprint compatible. The UM6K33NTN is housed in a 6-TSSOP (UMT6) or SC-88 package, while the SIL2324A-TP is in a SOT-23-6L package. Pinouts differ as well due to different package pin assignments and internal transistor arrangement. Substituting one for the other requires PCB redesign and verification of gate drive voltages and current capability. Gate drive logic levels and thermal management must be reconsidered.

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