UM6K33NTN vs PMPB13XNE,115: Component Comparison for Power Electronics Design
Quick verdict
For low-current switching applications requiring integrated dual MOSFETs with logic-level drive and minimal board space, the UM6K33NTN offers a straightforward solution. Conversely, for medium-power switching or load switching up to several amps with tight Rds(on) and higher power dissipation capability, the PMPB13XNE,115 clearly outperforms despite a higher gate charge and drive voltage requirement.
Spec comparison table
| Spec | UM6K33NTN | PMPB13XNE,115 | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel | Single N-Channel | UM6K33NTN integrates two MOSFETs, useful for half-bridge or dual switching. |
| Continuous Drain Current (Id @ 25°C) | 200 mA | 8 A | PMPB13XNE,115 supports 40× higher current, enabling higher power loads. |
| Drain-Source Voltage (Vds max) | 50 V | 30 V | UM6K33NTN has higher voltage rating, suitable for 48 V rails or 24 V with margin. |
| Gate Drive Voltage (typical) | Logic Level, 1.2 V drive | 1.8 V (min) to 4.5 V | UM6K33NTN can switch fully on at low gate voltages, good for low-voltage logic. |
| Gate Threshold Voltage (Vgs_th max) | 1 V @ 1 mA | 0.9 V @ 250 µA | Comparable threshold voltages, UM6K33NTN slightly higher but within logic-level range. |
| Gate Charge (Qg max @ Vgs) | Not specified | 36 nC @ 4.5 V | PMPB13XNE,115 has significant gate charge, increasing switching losses and gate drive requirements. |
| Input Capacitance (Ciss max) | 25 pF @ 10 V | 2195 pF @ 15 V | UM6K33NTN has extremely low input capacitance, favorable for high-frequency switching with minimal gate drive power. |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount; PCB design considerations differ by package size/type. |
| Operating Temperature Range (TJ) | Up to 150 °C | -55 °C to 150 °C | PMPB13XNE,115 supports wider ambient temp range, useful in harsh environments. |
| Package / Case | 6-TSSOP / SC-88 / SOT-363 | 6-UDFN with Exposed Pad | PMPB13XNE,115’s exposed pad improves thermal dissipation. |
| Maximum Power Dissipation | 120 mW | 1.7 W (Ta), 12.5 W (Tc) | PMPB13XNE,115 can dissipate an order of magnitude more power, critical for high-current applications. |
| Rds(on) Max @ Id / Vgs | 2.2 Ω @ 0.2 A, 4.5 V | 16 mΩ @ 8 A, 4.5 V | PMPB13XNE,115’s Rds(on) is ~140× lower, drastically reducing conduction losses at high current. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Both use standard MOSFET technology. |
| Supplier Device Package | UMT6 | DFN2020MD-6 | Packages are different; footprint and thermal characteristics vary. |
Design trade-offs
The UM6K33NTN’s primary advantage lies in its extremely low input capacitance (25 pF) and logic-level gate drive threshold, allowing it to be driven directly from low-voltage logic signals (1.2 V drive). This makes it ideal for low-current switching where gate drive power and board space are constrained. The integrated dual N-channel configuration saves PCB area and routing complexity in applications like load switching or level shifting, but the 200 mA continuous current and 2.2 Ω Rds(on) limit it to low-power switching or signal-level applications.
In contrast, the PMPB13XNE,115 supports a continuous drain current of 8 A with an Rds(on) of just 16 mΩ at 4.5 V gate drive, enabling it to handle loads up to several watts without excessive conduction losses. Its gate charge of 36 nC is substantial—gate drivers must be designed to source/sink adequate current to maintain switching speed and efficiency. The substantially larger input capacitance (2195 pF) will increase switching losses and may require stronger gate drivers or slower switching speeds. The exposed pad DFN package significantly improves thermal dissipation, allowing up to 12.5 W dissipation at case temperature, compared to only 120 mW for the UM6K33NTN.
From a layout perspective, the UM6K33NTN’s smaller package and dual-MOSFET configuration simplify routing for low-current control signals, but the thermal design is minimal due to the low power dissipation. The PMPB13XNE,115 requires careful thermal management (thermal vias, copper pours) to leverage its higher power dissipation capability. Its larger gate charge and input capacitance also increase switching energy, which must be accounted for in efficiency budgets and gate driver selection.
Cost-wise, the UM6K33NTN should be less expensive per unit due to its simpler specs and smaller die size, though at volume this may be offset by the PMPB13XNE,115’s reduced need for parallel devices or heatsinking in medium-power designs. The dual MOSFET integration of the UM6K33NTN can reduce BoM and assembly costs for low-power applications by eliminating an extra transistor.
Use-case fit
Choose UM6K33NTN when…
- You need a compact dual MOSFET array for low-current switching (< 0.2 A) in signal-level or logic-level load control.
- Operating voltages can be up to 50 V and you require a logic-level gate drive (1.2 V) for direct MCU or low-voltage FPGA control.
- Minimizing gate drive power and switching losses is important in a low-frequency or always-on application.
- PCB space is limited and integrating two MOSFETs in one package simplifies layout and component count.
- Thermal dissipation is minimal and the application does not exceed 120 mW power loss on the MOSFET.
Choose PMPB13XNE,115 when…
- Switching or driving loads up to 8 A continuous current with low conduction losses is required.
- Operating voltage is ≤30 V and you can provide a 4.5 V gate drive voltage for full enhancement.
- Thermal management with exposed pad package is feasible to handle up to 12.5 W dissipation at case temperature.
- The higher gate charge can be accommodated by your gate driver design without compromising switching speed.
- You need a single, low-Rds(on) MOSFET to replace parallel devices or handle medium power loads efficiently.
Drop-in compatibility
These two devices are not pin- or footprint-compatible. The UM6K33NTN is a dual N-channel MOSFET array in a 6-pin TSSOP/SC-88/SOT-363-style package (UMT6), whereas the PMPB13XNE,115 is a single N-channel MOSFET in a 6-pin DFN2020MD-6 package with an exposed pad. The pinouts, package size, and thermal characteristics differ significantly, so substituting one for the other would require PCB redesign and gate drive adjustments. No direct drop-in replacement exists between these two parts.
Alternatives to consider
- Si2323DS (Vishay): Single N-channel MOSFET with low Rds(on) ~40 mΩ at 4.5 V, suitable for low-voltage, medium-current applications.
- BSS138 (ON Semiconductor): Logic-level N-channel MOSFET with low gate charge and low current (<0.2 A), an alternative for low-power switching similar to UM6K33NTN.
- NTMFS5C628NL (ON Semiconductor): 30 V, 6 A MOSFET with low Rds(on) (~12 mΩ), balancing gate charge and conduction losses in a small package.