UM6K33NTN vs NX3020NAKV,115 MOSFET Array Comparison
Quick verdict
For low-voltage, low-current switching with tight gate drive constraints (e.g., logic-level control at 1.2V), the UM6K33NTN offers better gate threshold and lower gate drive voltage requirements, making it preferable in ultra-low power or battery-operated applications. When higher power dissipation, tighter R_DS(on) at moderate currents, and better thermal handling are priorities—such as in compact power management or load switching—NX3020NAKV,115 is the stronger choice despite its lower voltage rating and higher gate threshold.
Spec comparison table
| Spec | UM6K33NTN | NX3020NAKV,115 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Equivalent dual N-MOSFET array |
| Continuous drain current (I_D @ 25°C) | 200 mA | 200 mA | Equal continuous current rating |
| Max drain-source voltage (V_DS max) | 50 V | 30 V | UM6K33NTN supports higher voltage, better for 30–50V rails |
| Max power dissipation (P_D max @ 25°C) | 120 mW | 375 mW | NX3020NAKV dissipates over 3× power, better thermal margin |
| Gate drive type | Logic level, 1.2V drive | Logic level | UM6K33NTN requires lower gate voltage (1.2V typical threshold vs 2.0V typical for NX3020) |
| Gate threshold voltage (V_GS(th)) max | 1.0 V @ 1 mA | 1.5 V @ 250 µA | UM6K33NTN turns on at lower gate voltage, easier to drive from low-voltage logic |
| R_DS(on) max @ I_D, V_GS | 2.2 Ω @ 200 mA, 4.5 V | 4.5 Ω @ 100 mA, 10 V | UM6K33NTN has lower on-resistance at rated current and lower gate drive voltage |
| Input capacitance (C_iss) @ V_DS=10 V | 25 pF | 13 pF | NX3020NAKV has roughly half the input capacitance, reducing gate charge and switching losses |
| Gate charge (Q_g) max @ V_GS | Not specified | 0.44 nC @ 4.5 V | NX3020NAKV’s gate charge is low, beneficial for faster switching and lower gate drive power |
| Package | 6-TSSOP (UMT6) | SOT-666 (SOT-563) | NX3020NAKV smaller package, better for tight PCB layouts |
| Operating temperature range (T_J) | Up to 150 °C | -55 °C to 150 °C | NX3020NAKV rated for wider ambient range, more robust in cold environments |
| Leakage current (typ @ 150 °C) | Not specified | 10 µA | NX3020NAKV leakage known, low but may impact ultra-low leakage designs |
| Max peak drain current | Not specified | 800 mA | NX3020NAKV can handle higher short-term currents |
| Thermal impedance (J-A) max | Not specified | 25 K/W | NX3020NAKV provides thermal impedance data, useful for thermal design |
| Mounting type | Surface Mount | Surface Mount | Both SMT, no difference |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent technology |
Design trade-offs
The UM6K33NTN’s higher voltage rating (50 V vs 30 V) expands its applicability to circuits where voltage transients or supply voltages up to 50 V are expected, such as industrial control or automotive auxiliary loads. However, this comes at the cost of a higher R_DS(on) at the rated current compared to NX3020NAKV,115, but the difference is somewhat mitigated by different test conditions (2.2 Ω at 200 mA vs 4.5 Ω at 100 mA). In practical terms, UM6K33NTN offers lower conduction losses at the rated current and gate drive voltage, critical in low-current linear or switching applications.
Gate drive requirements differ significantly. UM6K33NTN is optimized for logic-level gate drive with a threshold around 1 V, enabling direct interfacing with low-voltage microcontrollers or FPGAs without additional gate drive circuitry. NX3020NAKV requires closer to 2 V to fully turn on, which could necessitate level shifting or dedicated driver ICs in low-voltage systems, increasing complexity and power consumption.
NX3020NAKV excels in thermal performance and power dissipation capability. Its 375 mW maximum power dissipation triples that of the UM6K33NTN, allowing it to handle higher duty cycles or transient currents without thermal derating. The smaller SOT-666 package also improves thermal conduction and is preferable for dense PCB layouts. Additionally, NX3020NAKV’s lower input capacitance (~13 pF vs 25 pF) and documented low gate charge (0.44 nC at 4.5 V) support faster switching speeds with reduced gate drive losses, beneficial in PWM or high-frequency applications.
Leakage current data is sparse for UM6K33NTN, but NX3020NAKV specifies a typical leakage of 10 µA at 150 °C, which is acceptable for most power switching but may be a consideration in ultra-low leakage or battery standby circuits. NX3020NAKV also offers a wider ambient temperature range (-55 °C to 150 °C), making it more versatile in harsh environments.
Cost at volume and availability are not explicitly detailed here, but package size and thermal capability often correlate with price; the smaller SOT-666 package of NX3020NAKV may command a premium, though it could be offset by system-level savings due to its higher power rating.
Use-case fit
Choose UM6K33NTN when…
- You need to switch loads up to 50 V, such as 48 V industrial or automotive auxiliary circuits.
- Your gate drive voltage is limited to around 1.2 V or lower, e.g., direct MCU GPIO control without level shifters.
- Low conduction losses at 200 mA with minimal gate drive power are a priority in low-power or battery-operated devices.
- Package height and footprint are less critical, and you prefer a 6-TSSOP (UMT6) package for easier hand soldering or prototyping.
- Leakage current at high temperature is a concern (though not explicitly specified, the lack of leakage data suggests conservative use).
Choose NX3020NAKV,115 when…
- Your maximum supply voltage is below 30 V and you want a smaller package (SOT-666) for compact, space-constrained designs.
- Thermal dissipation and power handling matter: 375 mW max power dissipation allows higher duty cycles or transient currents.
- Faster switching and lower gate charge are required, such as in PWM or signal-level switching at higher frequencies.
- Your design can accommodate a higher gate drive voltage (around 4.5 V) and gate threshold (~2 V), typically with dedicated MOSFET drivers.
- You need operation across a wider ambient temperature range (-55 °C to 150 °C), e.g., outdoor or industrial environments.
Drop-in compatibility
Pin and footprint compatibility cannot be confirmed explicitly from the data provided. The UM6K33NTN is in a 6-TSSOP (UMT6) package, while the NX3020NAKV,115 uses a SOT-666 (also called SOT-563) package, which differs in pin count and size. Therefore, these parts are not drop-in replacements without PCB redesign. Substituting one for the other requires verifying pinouts, package dimensions, and layout changes. Additionally, the difference in voltage rating, gate threshold, and R_DS(on) means firmware or gate drive circuitry might need adjustment.
Alternatives to consider
- BSS138 (ON Semiconductor): Single N-channel logic-level MOSFET, widely used for low-current signal switching up to 50 V; good for simple level shifting or load switching.
- Si2302 (Vishay): Low-voltage (20 V) logic-level MOSFET with low R_DS(on) in a small SOT-23 package; suitable for compact low-voltage switching.
- NTR4502N (ON Semiconductor): Dual N-channel MOSFET array with a moderate voltage rating (30 V) and low R_DS(on), good balance between power and footprint for automotive signals.