UM6K33NTN vs NX3008NBKS,115 MOSFET Array Comparison
Quick verdict
For low-voltage switching applications requiring higher current capability and better conduction performance, the NX3008NBKS,115 outperforms the UM6K33NTN due to its 350mA continuous current rating and lower R_DS(on) of 1.4Ω at 4.5V. Conversely, for circuits needing a higher voltage rating up to 50V and very low gate threshold voltage (logic-level gate drive starting at 1V), the UM6K33NTN is the better choice, particularly in low-current, high-voltage signal switching or level shifting.
Spec comparison table
| Spec | UM6K33NTN | NX3008NBKS,115 | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel MOSFET | Dual N-Channel MOSFET | Same configuration; no difference |
| Drain-Source Voltage, V_DS max | 50 V | 30 V | UM6K33NTN supports higher voltage (better for 30–50V rails) |
| Continuous Drain Current I_D @ 25°C | 200 mA | 350 mA | NX3008NBKS,115 supports 75% higher current, beneficial for higher power switching |
| Power Dissipation max | 120 mW | 445 mW | NX3008NBKS,115 can dissipate more power, allowing more robust thermal margin |
| R_DS(on) max @ I_D, V_GS | 2.2 Ω @ 200mA, 4.5 V | 1.4 Ω @ 350mA, 4.5 V | NX3008NBKS,115 has significantly lower on-resistance, improving conduction losses |
| Gate Threshold Voltage V_GS(th) max | 1.0 V @ 1mA | 1.1 V @ 250 µA | UM6K33NTN has slightly lower threshold at a higher current, better for low-voltage logic |
| Gate Drive Voltage | Logic Level Gate, 1.2V Drive | Logic Level Gate | Both are logic-level, but UM6K33NTN is specified down to 1.2V, NX3008NBKS typical 0.6–1.1V |
| Gate Charge Q_g max @ V_GS | Not specified | 0.68 nC @ 4.5 V | NX3008NBKS,115 has defined gate charge, relatively low, aiding switching speed |
| Input Capacitance C_iss max | 25 pF @ 10 V | 50 pF @ 15 V | UM6K33NTN has lower input capacitance, which reduces gate drive losses and switching delay |
| Output Capacitance C_oss (typ) | Not specified | 6.5 pF | Lower output capacitance in NX3008NBKS,115 helps switching performance |
| Reverse Transfer Capacitance C_rss (typ) | Not specified | 2.2 pF | NX3008NBKS,115 provides this spec, useful for high-speed switching analysis |
| Drain Current Spiking max | Not specified | 1.4 A | NX3008NBKS,115 can handle transient spikes 7x continuous current, important for pulse loads |
| Operating Temperature Range (T_J) | Up to 150°C | -55°C to +150°C | NX3008NBKS,115 rated for automotive temp range, wider operating range |
| Package | 6-TSSOP (UMT6) | 6-TSSOP | Same package style; footprint compatibility possible (see below) |
| Power Dissipation (typical) | Not specified | 280 mW | NX3008NBKS,115 typical dissipation much higher, better for applications with thermal constraints |
| Thermal Resistance Junction-to-Ambient | Not specified | 300 K/W (typ) | NX3008NBKS,115 provides thermal data, useful for thermal design |
| Electrostatic Discharge (ESD) Rating | Not specified | 2000 V | NX3008NBKS,115 has defined ESD rating, important for automotive-grade applications |
| Qualification | Not specified | AEC-Q101 | NX3008NBKS,115 is automotive qualified, increasing reliability in harsh environments |
| Leakage Current I_D (typ @ 25°C) | Not specified | 1 µA | NX3008NBKS,115 leakage current specified, low leakage beneficial in low-power designs |
| Gate Leakage Current (typ) | Not specified | 0.2–1 µA | NX3008NBKS,115 gate leakage current specified, generally low |
| Gate Source Voltage Max | Not specified | ±8 V | NX3008NBKS,115 can handle wider gate drive swings |
| Switching Times (typ @ 25°C) | Not specified | t_rise 11 ns, t_fall 19 ns, t_on 15–30 ns, t_off 69–138 ns | NX3008NBKS,115 provides switching speed data, useful for high-frequency design |
Design trade-offs
The NX3008NBKS,115 offers a clear advantage in current capability and conduction losses, supporting 350mA continuous current with a typical R_DS(on) of 1.4Ω at 4.5 V gate drive, compared to UM6K33NTN’s 200mA at 2.2Ω. This means for switching loads near or above 200mA, the NX3008NBKS,115 will be more efficient and generate less heat, simplifying thermal management. Its maximum power dissipation of 445mW (typical 280mW) compared to the UM6K33NTN’s 120mW limits means it’s more robust under higher load conditions.
On the other hand, the UM6K33NTN supports a higher drain-source voltage of 50V versus 30V for the NX3008NBKS,115. This makes the UM6K33NTN better suited for applications with higher bus voltages or where voltage spikes might approach 50V. Additionally, the UM6K33NTN has a slightly lower gate threshold voltage (1.0V vs 1.1V) and is specified for logic-level gate drive starting as low as 1.2V, which can be critical in low-voltage digital control environments.
From a switching performance perspective, NX3008NBKS,115 provides detailed switching time and gate charge data, including a typical Q_g of 0.68nC at 4.5V, and rise/fall times around 10–20ns, which will aid in designing efficient gate drivers and predicting switching losses. The UM6K33NTN lacks detailed switching specs, which can complicate accurate loss modeling and gate drive optimization.
The NX3008NBKS,115 supports automotive-grade qualification (AEC-Q101) and wider operating and storage temperature ranges (-55°C to +150°C), making it suitable for harsher environments. The UM6K33NTN lacks this qualification and has a narrower temperature range, limiting its use in automotive or industrial applications.
In layout terms, both parts come in 6-TSSOP packages with similar outlines, hinting at potential footprint compatibility, but differences in pin assignments or internal connections must be verified. The NX3008NBKS,115’s higher input capacitance (50pF vs 25pF) means slightly higher gate drive losses and possibly slower switching if the gate driver is weak, whereas UM6K33NTN’s lower input capacitance reduces gate drive power and switching delay.
Cost-wise, NX3008NBKS,115’s automotive qualification and higher performance specs may translate to a higher price point, but this is justified in more demanding applications. The UM6K33NTN may be more cost-effective in low-current, higher-voltage switching scenarios where the 50V rating is necessary but power dissipation and switching speed demands are modest.
Use-case fit
Choose UM6K33NTN when…
- Your application requires switching voltages up to 50V, such as level shifting or low-current high-voltage signal switching.
- Gate drive voltage is limited to around 1.2V and you need guaranteed logic-level turn-on at this low voltage.
- Continuous current requirements are below 200mA, and power dissipation must be kept under 120mW.
- Your design prioritizes lower input capacitance to reduce gate driver power consumption and switching delay.
- Automotive qualification is not required, and the ambient temperature range is moderate (up to 150°C junction).
Choose NX3008NBKS,115 when…
- You need to switch currents up to 350mA continuously with lower conduction losses (R_DS(on) max 1.4Ω @ 4.5V).
- Your system voltage is 30V or less, fitting well within the 30V maximum rating.
- Automotive or industrial qualification (AEC-Q101) and extended temperature range (-55°C to +150°C) are mandatory.
- Switching speed and gate charge are critical, and you require detailed switching specs for loss and thermal modeling.
- Higher power dissipation capability (up to 445mW max) is needed for robust thermal performance.
Drop-in compatibility
Both