UM6K33NTN vs NX3008CBKS,115 MOSFET Array Comparison
Quick verdict
For low-voltage, low-current switching where absolute maximum voltage and power dissipation matter, the UM6K33NTN’s 50V rating and 120mW power dissipation make it a safer choice for circuits operating close to 50V with limited thermal headroom. Conversely, NX3008CBKS,115 excels in automotive-grade applications requiring both N- and P-channel devices, higher continuous current (up to 350mA), and better R_DS(on) performance, making it preferable for more demanding switching loads up to 30V with improved efficiency.
Spec comparison table
| Spec | UM6K33NTN | NX3008CBKS,115 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | N and P-Channel | NX3008 offers complementary pairs, enabling half-bridge or push-pull topologies easily. |
| Continuous Drain Current (I_D @25°C) | 200mA | 350mA (N), 200mA (P) | NX3008 supports higher max current on N-channel, useful for higher load applications. |
| Drain-Source Voltage (V_DS max) | 50V | 30V | UM6K33 supports higher voltage, critical if your application approaches or exceeds 30V. |
| Power Dissipation (P_max) | 120mW | 445mW | NX3008 can dissipate nearly 4× more power, allowing higher continuous currents or worse cooling. |
| Gate Drive Threshold (V_GS_th max) | 1.0V @ 1mA | 1.1V @ 250µA | Comparable threshold voltages; UM6K33 threshold measured at higher test current (1mA vs 250µA). |
| R_DS(on) max @ I_D and V_GS | 2.2Ω @ 200mA, 4.5V | 1.4Ω @ 350mA, 4.5V | NX3008 has significantly lower R_DS(on) at higher current, reducing conduction losses. |
| Gate Charge (Q_g max @ V_GS) | Not specified | 0.68nC @ 4.5V | NX3008 provides gate charge data; 0.68nC is low, indicating faster switching and less drive loss. |
| Input Capacitance (C_iss max @ V_DS) | 25pF @ 10V | 50pF @ 15V | UM6K33 has lower input capacitance, potentially reducing gate drive losses and switching delays. |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount, suitable for compact PCB layouts. |
| Operating Temperature Range (T_j) | up to 150°C | -55°C to 150°C | NX3008 supports automotive-grade extended low temperature, important for harsh environments. |
| Package Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | Both share 6-pin TSSOP family; NX3008 only specifies 6-TSSOP explicitly. |
| Supplier Device Package | UMT6 | 6-TSSOP | UM6K33’s UMT6 is a variant of standard 6-TSSOP, may differ in pin spacing or footprint. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent MOSFET technology. |
| Qualification | Not specified | AEC-Q101 | NX3008 is automotive qualified, implying higher reliability and screening. |
| Fet Feature | Logic Level Gate, 1.2V Drive | Logic Level Gate | UM6K33 specifically notes 1.2V drive; NX3008 is logic level but no exact drive voltage stated. |
Design trade-offs
The UM6K33NTN’s higher voltage rating (50V vs 30V) gives it an edge in applications with voltage spikes or where a larger voltage margin is needed. However, this comes at the cost of higher R_DS(on) at its rated current (2.2Ω vs 1.4Ω), which means conduction losses are significantly higher for UM6K33 at equivalent current levels. The maximum continuous drain current of 200mA also restricts the UM6K33 to lighter loads compared to the NX3008, which handles 350mA on its N-channel device.
Thermally, the NX3008’s ability to dissipate 445mW compared to UM6K33’s 120mW means it can handle higher power dissipation without derating or requiring extensive heatsinking. This is important for applications with frequent switching or high duty cycles where junction temperature rise could impact reliability or performance.
Gate drive considerations also differ. The UM6K33 specifies a 1.2V logic level gate drive, which can be beneficial in low-voltage control systems, but gate charge data is not provided, limiting detailed switching loss analysis. NX3008’s stated gate charge of 0.68nC at 4.5V indicates relatively low gate drive loss and faster switching speeds. However, its higher input capacitance (50pF vs 25pF) could slightly offset this advantage in very high-frequency applications.
From a layout perspective, the UM6K33’s 6-TSSOP package variant UMT6 may have different pin spacing or footprint nuances compared to the NX3008’s standard 6-TSSOP. This could affect PCB reuse or drop-in substitution. The NX3008’s automotive qualification (AEC-Q101) and extended operating temperature range (-55°C to 150°C) make it a better candidate for harsh environments or automotive-grade designs, potentially justifying a higher unit cost and requiring stricter quality controls.
Cost-wise, while not specified here, Nexperia’s automotive-grade qualification and better performance usually come with a premium. UM6K33 might be more cost-effective in consumer or industrial applications where voltage rating and cost are primary concerns over current capacity and automotive qualification.
Use-case fit
Choose UM6K33NTN when…
- Your application requires a voltage rating up to 50V, such as industrial control signals or automotive auxiliary circuits with higher spike margins.
- The maximum load current does not exceed 200mA, and power dissipation is limited to around 120mW.
- You are working in a low-voltage logic control environment where a 1.2V gate drive is available or preferred.
- PCB space is constrained but you can accommodate the UMT6 package variant.
- Cost sensitivity is a priority and automotive qualification is not required.
Choose NX3008CBKS,115 when…
- You need both N- and P-channel MOSFETs in a single package for half-bridge or complementary switching topologies.
- Load currents up to 350mA on the N-channel device are required, with lower R_DS(on) for improved efficiency.
- The application demands a power dissipation capability up to 445mW for higher thermal design margins.
- Automotive-grade qualification (AEC-Q101) and extended temperature range (-55°C to 150°C) are mandatory.
- Gate drive losses, switching speed, and system efficiency are critical, leveraging the low gate charge (0.68nC) device.
Drop-in compatibility
The UM6K33NTN and NX3008CBKS,115 both come in 6-pin TSSOP-like packages but the UM6K33 uses a UMT6 package variant, which may not be pin- or footprint-compatible with the NX3008’s standard 6-TSSOP. Additionally, the device configurations differ: UM6K33 is dual N-channel only, while NX3008 combines N- and P-channel devices. This means they are not functionally pin-compatible for drop-in substitution without schematic and PCB changes. Without explicit pinout cross-reference data, substitution may require redesign.
Alternatives to consider
- BSS138 (N-Channel MOSFET): A widely used low-voltage logic-level MOSFET with low gate charge, suitable for low-current switching.
- Si2333DS (N-Channel MOSFET): Offers a good balance of low R_DS(on) and 30V rating in a small SOT-23 package.
- FDG633N (Dual N-Channel MOSFET): Similar dual N-channel configuration with a 30V rating and low R_DS(on), suitable for compact switching circuits.