UM6K33NTN vs MCM3400A-TP MOSFET Array Comparison

Quick verdict

For low-current, low-voltage switching or level shifting with minimal gate drive voltage, the Rohm UM6K33NTN is the better fit due to its 1.2V logic-level gate drive and 50V rating. For medium-current loads up to 5A at 30V, such as power distribution or load switching in compact DC-DC converters, the MCC MCM3400A-TP outperforms with significantly lower R_DS(on) and higher power dissipation capability.

Spec comparison table

SpecUM6K33NTNMCM3400A-TPNotes
Configuration2 N-Channel (Dual)2 N-Channel (Dual)Equal
Continuous Drain Current @ 25°C200 mA5 AMCM3400A-TP supports 25x higher continuous current
Drain-Source Voltage Max50 V30 VUM6K33NTN has higher voltage rating, better for 30-50V rails
Power Dissipation Max120 mW1.4 WMCM3400A-TP can dissipate >10x more power, better thermal margin
R_DS(on) Max @ I_D, V_GS2.2 Ω @ 200 mA, 4.5 V32 mΩ @ 5.8 A, 10 VMCM3400A-TP offers drastically lower conduction losses at typical load currents
Gate Threshold Voltage (V_GS_th) Max1.0 V @ 1 mA1.5 V @ 250 µAUM6K33NTN has lower threshold, easier to drive at low gate voltages
Input Capacitance (C_iss) Max25 pF @ 10 V1155 pF @ 15 VUM6K33NTN has much lower input capacitance, enabling faster switching and lower gate charge
Gate Drive VoltageLogic Level Gate, 1.2V DriveNo specific logic level spec; input voltage 2.25-5.5 VUM6K33NTN can switch fully on at lower gate voltages, useful for low-voltage logic
Gate Resistance MinNot specified1.7 Ω (min)MCM3400A-TP has built-in gate resistance, which affects switching speed and gate drive design
Diode Forward Voltage MaxNot specified1 V (max)MCM3400A-TP includes body diode forward voltage info, relevant for synchronous rectification
Pulsed Drain Current MaxNot specified20 AMCM3400A-TP supports high pulse currents for transient loads
Junction Temperature RangeUp to 150°C (TJ max)-55°C to 150°C (TJ range)MCM3400A-TP supports wider operating temperature range
Package6-TSSOP, SC-88, SOT-363 (UMT6)6-VDFN Exposed Pad (DFN2020-6L)Different package types, affects thermal performance and PCB layout
Mounting TypeSurface MountSurface MountEqual
Gate-Source Voltage MaxNot specified±12 VMCM3400A-TP gate voltage rating is higher, allowing more robust gate drive voltages
Reverse Recovery Charge MinNot specified11 nCMCM3400A-TP diode recovery info useful for switching losses and EMI considerations
Switching Frequency TypNot specified1 MHz (typ)MCM3400A-TP suitable for high-frequency switching
Thermal Resistance Junction to Ambient MaxNot specified89 °C/WMCM3400A-TP thermal resistance info allows better thermal design
Zero Gate Voltage Drain Current MinNot specified1 µAMCM3400A-TP has low leakage current, important for low standby power

Design trade-offs

The UM6K33NTN targets very low current loads, logic-level gate drive at 1.2V, and a higher voltage rating of 50V. Its R_DS(on) at 200mA and 4.5V gate is 2.2Ω, which is quite high, limiting efficiency in power switching applications. However, its low input capacitance (25 pF) means minimal gate charge, allowing very fast switching with minimal gate drive power. This makes it suitable for signal-level switching, level shifting, or load switching in low-current, low-noise designs.

In contrast, the MCM3400A-TP is designed for medium-power applications, with a continuous drain current of 5A and pulsed current up to 20A. Its R_DS(on) is 32 mΩ at 5.8A and 10V gate drive, drastically reducing conduction losses compared to UM6K33NTN when operating at higher currents. The power dissipation rating of 1.4W versus 120mW also supports higher thermal loads, but care must be taken to optimize PCB thermal paths given the 6-VDFN exposed pad package and its 89°C/W junction-to-ambient thermal resistance.

The gate drive requirements differ significantly. UM6K33NTN is optimized for low-voltage logic-level drive (around 1.2V), easing interface with low-voltage microcontrollers or logic. MCM3400A-TP requires a higher gate voltage range (2.25–5.5 V typical input voltage), with a gate threshold up to 1.5V. Additionally, MCM3400A-TP includes a minimum gate resistance of 1.7Ω, which impacts switching speed and gate driver design—this can reduce ringing but also slows switching transitions, affecting switching losses at high frequencies.

The large difference in input capacitance (25 pF vs 1155 pF) means UM6K33NTN is far easier to drive at high switching speeds with minimal gate driver power, while MCM3400A-TP will draw significantly more gate charge and require stronger gate drivers or slower switching to keep EMI and losses manageable. The MCM3400A-TP’s switching frequency rating of up to 1 MHz supports use in modern synchronous DC-DC converters, whereas UM6K33NTN’s datasheet does not specify switching frequency, indicating it’s not optimized for such use.

From a layout perspective, UM6K33NTN’s small 6-TSSOP / SC-88 / SOT-363 package is convenient for dense, low-power boards. MCM3400A-TP’s 6-VDFN with exposed pad requires careful PCB thermal design and soldering processes but enables better heat dissipation at higher power levels.

Cost at volume is not provided, but generally, higher current, lower R_DS(on) MOSFET arrays like MCM3400A-TP command a price premium. UM6K33NTN’s simpler device and smaller current rating imply lower cost, suitable for cost-sensitive signal applications.

Use-case fit

Choose UM6K33NTN when…

Choose MCM3400A-TP when…

Drop-in compatibility

The UM6K33NTN and MCM3400A-TP are not pin-compatible nor footprint-compatible. UM6K33NTN comes in a 6-TSSOP/SC-88/SOT-363 style package (UMT6), while MCM3400A-TP uses a 6-pin VDFN with an exposed pad (DFN2020-6L). The difference in package size, pin configuration, and thermal pad means a PCB designed for one cannot accept the other without redesign.

Moreover, the different gate drive requirements (logic-level 1.2V vs 2.25–5.5V typical) mean substitution without gate driver changes risks improper MOSFET operation. Therefore, neither device is a drop-in