UM6K33NTN vs FDC606P MOSFET Comparison
Quick verdict
For low-current, dual-channel switching at up to 50 V with extremely low gate drive requirements, the UM6K33NTN is the better choice, especially in space-constrained logic-level switching applications. For high-current, single P-channel switching at voltages up to 12 V, with low R_DS(on) and higher power dissipation, the FDC606P outperforms by a large margin and suits load switching and power management roles.
Spec comparison table
| Spec | UM6K33NTN | FDC606P | Notes |
|---|---|---|---|
| Configuration | 2 × N-Channel | 1 × P-Channel | UM6K33NTN offers dual channels; FDC606P is single P-Channel. Choose based on polarity and channel count needs. |
| Continuous Drain Current (I_D) @25°C | 200 mA | 6 A | FDC606P supports 30× higher continuous current, critical for power switching applications. |
| Drain-Source Voltage (V_DS max) | 50 V | 12 V | UM6K33NTN supports higher voltage operation, useful for 24 V and 48 V systems. |
| Gate Drive Voltage (Logic Level) | 1.2 V drive (logic level) | No explicit logic level spec | UM6K33NTN is optimized for very low gate voltage drive; FDC606P requires ~4.5 V gate drive for R_DS(on) spec. |
| Gate Charge (Q_g max at V_GS) | Not specified | 25 nC @ 4.5 V | FDC606P’s gate charge is moderate; UM6K33NTN data missing but likely lower given low capacitance. |
| Input Capacitance (C_iss max) | 25 pF @ 10 V | 1699 pF @ 6 V | UM6K33NTN has dramatically lower input capacitance, improving switching speed and reducing gate drive losses. |
| Mounting Type | Surface Mount | Surface Mount | Both standard surface mount; layout depends on package size and footprint. |
| Operating Temperature Range | - to 150°C (TJ) | -55°C to 150°C (TJ) | FDC606P includes industrial temp rating; UM6K33NTN datasheet does not specify low temp limit. |
| Package Case | 6-TSSOP, SC-88, SOT-363 (UMT6) | SOT-23-6 Thin (SuperSOT™-6) | Different packages; footprint and pinout not compatible. |
| Maximum Power Dissipation (P_D) | 120 mW | 1.6 W (at Ta) | FDC606P supports more than 10× higher power dissipation, critical for thermal design. |
| R_DS(on) max @ I_D, V_GS | 2.2 Ω @ 200 mA, 4.5 V | 26 mΩ @ 6 A, 4.5 V | FDC606P’s R_DS(on) is orders of magnitude lower, enabling much higher efficiency at load. |
| Threshold Voltage (V_GS(th)) | 1 V @ 1 mA | 1.5 V @ 250 µA | UM6K33NTN has a slightly lower threshold voltage, better for logic-level operation. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Both standard MOSFET technology. |
| Supplier Device Package | UMT6 | SuperSOT™-6 | Different package styles with different thermal and mechanical characteristics. |
Design trade-offs
The UM6K33NTN and FDC606P target fundamentally different application spaces. The UM6K33NTN is a dual N-channel MOSFET array with a low continuous current rating of 200 mA and a high maximum voltage of 50 V. Its extremely low input capacitance (25 pF) and logic-level gate drive (1.2 V) make it suitable for low-current signal-level switching, level shifting, or multiplexing in compact, low-power circuits. The 2.2 Ω R_DS(on) at 200 mA means conduction losses are significant for anything beyond a few hundred milliamps, so it is not efficient for power switching.
Conversely, the FDC606P is a single P-channel MOSFET designed for switching loads up to 6 A at 12 V with a very low R_DS(on) of 26 mΩ. Its input capacitance at 1699 pF is two orders of magnitude higher, which means gate drive losses and switching speed need careful consideration, but this is typical for power MOSFETs. The power dissipation rating of 1.6 W (at ambient) allows the FDC606P to handle significantly more load and thermal stress. The P-channel device simplifies high-side switching in 12 V systems, reducing complexity compared to N-channel high-side switches.
Thermal management considerations are critical for the FDC606P, which requires proper PCB copper area or heat sinking when switching high currents, while the UM6K33NTN’s low power dissipation limits mean thermal issues are less pronounced but also limit its power handling capability.
Gate drive requirements also differ. UM6K33NTN’s logic-level gate drive enables direct interfacing with low-voltage logic (1.2 V), reducing the need for gate driver ICs. The FDC606P, with a ±8 V maximum gate-source voltage and 4.5 V gate drive for R_DS(on) spec, typically requires a driver capable of swinging to near ground or the supply voltage for efficient switching, especially in PWM or DC-DC converter applications.
From a layout perspective, UM6K33NTN’s 6-TSSOP/SC-88 package is compact and supports dual MOSFETs in a small footprint, useful for space-constrained designs requiring multiple switches. The FDC606P’s SuperSOT-6 package is optimized for power dissipation but is a different footprint and pinout, so direct substitution is not possible.
Cost at volume typically reflects these differences: UM6K33NTN devices are likely cheaper per unit and optimized for signal-level switching, while FDC606P will be more expensive but justified by its higher current and power ratings.
Use-case fit
Choose UM6K33NTN when…
- Switching or multiplexing low-current signals (<200 mA) at voltages up to 50 V.
- Logic-level driven switching is needed with minimal gate drive voltage (1.2 V).
- Dual MOSFET channels in a single package reduce PCB area and component count.
- Low input capacitance is critical to minimize switching losses and EMI in high-frequency digital switching.
- Applications involve level shifting or signal routing in industrial or automotive sensor interfaces.
Choose FDC606P when…
- Switching loads with currents up to 6 A at 12 V, such as battery management or power rails.
- High-side P-channel MOSFET is required for simplified power line switching.
- Low conduction losses are critical to maintain efficiency and reduce heat (26 mΩ R_DS(on)).
- Power dissipation up to 1.6 W at ambient is needed, requiring proper thermal layout.
- Gate drive voltage can be provided at or near 4.5 V, and gate charge losses are acceptable.
Drop-in compatibility
The UM6K33NTN and FDC606P are not pin-compatible or footprint-compatible. The UM6K33NTN comes in a 6-pin TSSOP/SC-88 package designed for dual N-channel MOSFETs, while the FDC606P is a single P-channel MOSFET in a SuperSOT-6 SOT-23-6 package. Substituting one for the other requires redesigning the PCB footprint and likely the gate drive and load circuitry due to differences in polarity, channel count, and electrical characteristics.
Alternatives to consider
- BSS138 (N-Channel, 50 V, ~200 mA): Widely used logic-level MOSFET with similar voltage and current ratings to UM6K33NTN but single channel and more common package options.
- Si2302 (P-Channel, 20 V, 2.8 A): A P-channel MOSFET intermediate between UM6K33NTN and FDC606P in current rating, useful for moderate load switching.
- FDS6910 (Dual N-Channel, 30 V, 3.7 A): Dual MOSFET array with higher current rating than UM6K33NTN, suitable for power switching with low R_DS(on).