UM6K33NTN vs CSD87501L MOSFET Arrays: Technical Comparison for Hardware Design
Quick verdict
For low-current, low-voltage digital switching and signal-level applications, the Rohm UM6K33NTN is the clear choice due to its very low gate threshold (1V) and extremely low continuous drain current rating (200mA), optimized for logic-level drive at 1.2V. For medium- to high-current power switching, the Texas Instruments CSD87501L dominates with continuous source current capability up to 14A, extremely low on-resistance (~7.8mΩ typical), and 2.5W power dissipation, making it suitable for power stages and load switches at voltages up to 30V.
Spec comparison table
| Spec | UM6K33NTN | CSD87501L | Notes |
|---|---|---|---|
| Configuration | 2 × N-Channel | 2 × N-Channel, Common Drain | Both dual N-channel arrays; TI specifies common drain configuration, Rohm does not |
| Continuous Drain Current (Id, 25°C) | 200mA | Not specified (continuous source current min: 14A, typ: 7A) | CSD87501L supports orders of magnitude higher current, critical for power applications |
| Drain-Source Voltage Max (Vds) | 50V | Not explicitly specified; Source-to-Source Voltage Max 30V | UM6K33NTN supports higher voltage; CSD87501L limited to 30V typical |
| Gate Drive Voltage | Logic Level, 1.2V drive | Logic Level | UM6K33NTN optimized for lower gate drive voltage; CSD87501L typically driven at 4.5–10V |
| Gate Threshold Voltage (Vgs_th max) | 1V @ 1mA | 2.3V @ 250µA | UM6K33NTN turns on at much lower gate voltage, better for low-voltage logic |
| On-Resistance (Rds_on max @ Id, Vgs) | 2.2Ω @ 200mA, 4.5V | 7.8mΩ (typ), source-to-source | CSD87501L has vastly lower on-resistance, enabling higher efficiency and power handling |
| Maximum Power Dissipation (Pd) | 120mW | 2.5W | CSD87501L handles over 20× more power dissipation, suitable for high-power designs |
| Input Capacitance (Ciss) | 25pF @ 10V | 1620pF (typ), 2110pF (max) | UM6K33NTN has much lower input capacitance, beneficial for high-speed switching at low current |
| Gate Charge (Qg max @ Vgs) | Not specified | 40nC @ 10V | CSD87501L has significant gate charge, requiring stronger gate drivers |
| Operating Temperature Range (TJ) | Up to 150°C | -55°C to 150°C | CSD87501L supports wider temperature range on low end |
| Package Type | 6-TSSOP / SC-88 / SOT-363 (UMT6) | 10-Picostar (3.37×1.47 mm) (XFLGA) | Different packages, affecting PCB layout and thermal dissipation |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount |
| Gate-to-Source Voltage Max | Not specified | ±20V | CSD87501L supports wider gate voltage range, allowing more rugged gate drive |
| Gate Leakage Current Max | Not specified | 10μA | Low but specified for CSD87501L |
| Rise Time / Fall Time | Not specified | 260ns / 712ns (typ) | Switching speeds available only for CSD87501L, relevant for PWM and high-speed switching |
| Human Body Model ESD Rating | Not specified | 2kV | CSD87501L specifies ESD robustness |
| Series Gate Resistance | Not specified | 300Ω min, 450Ω typ | Internal gate resistor on CSD87501L can affect switching speed and EMI |
| Source-to-Source Voltage Max | Not specified | 30V | CSD87501L limited to 30V source-to-source voltage |
| Pulsed Source Current Min | Not specified | 72A | CSD87501L supports high pulsed currents, critical for switching applications |
Design trade-offs
The UM6K33NTN is a small-signal MOSFET array targeting very low current, low voltage, and logic-level switching with minimal gate drive requirements. Its Rds(on) of 2.2Ω at 200mA and 4.5V gate drive is modest, and input capacitance of only 25pF means low gate charge and minimal switching losses at low frequencies. This makes it suitable for level shifting, signal multiplexing, or analog switch replacement in low-power digital circuits. The low maximum power dissipation of 120mW tightly limits its continuous current handling and thermal dissipation, so it must be used well within those constraints to avoid overheating.
In contrast, the CSD87501L is a power MOSFET array designed for high-current switching and load driving, with a continuous source current rating of up to 14A min and pulsed current capability of 72A. Its extremely low Rds(on) of 7.8mΩ drastically reduces conduction losses at high currents, improving efficiency in power switching circuits. However, its gate charge is substantial (40nC at 10V), requiring a robust gate driver capable of sourcing/sinking tens of milliamps during switching transitions. The internal gate resistor (300–450Ω) further slows switching edges, which can reduce EMI but may limit switching speed in high-frequency applications.
From a thermal perspective, the CSD87501L’s 2.5W maximum power dissipation and package design (10-pin Picostar) allow for better heat spreading and higher power capability, whereas the UM6K33NTN’s tiny 6-pin UMT6 package and 120mW rating restrict thermal management options. The difference in operating voltage ratings is also significant: UM6K33NTN supports up to 50V drain-source voltage, suitable for slightly higher voltage rail switching compared to the 30V source-to-source max on the CSD87501L.
Layout sensitivity differs substantially. The UM6K33NTN’s low input capacitance and gate charge simplify gate drive design and minimize switching noise in low-current logic-level circuits. The CSD87501L, with its high input capacitance and internal gate resistor, requires careful gate drive loop design, including consideration of gate driver strength, gate resistor selection (if external), and PCB parasitics to optimize switching speed and reduce losses.
Finally, cost and availability at volume may vary: the UM6K33NTN’s small-signal focus and smaller package may reduce cost for low-power designs, while the CSD87501L’s power handling and package complexity likely increase unit cost but justify it in power switching roles.
Use-case fit
Choose UM6K33NTN when…
- You need a dual N-channel MOSFET array for low-level signal switching or level shifting at logic voltages ~1.2–4.5V.
- Your continuous current requirements are below 200mA and power dissipation must be minimal (under 120mW).
- Low input capacitance and gate charge are critical to minimize switching losses and simplify gate drive in low-speed digital circuits.
- You require a device that can handle up to 50V drain-source voltage for switching slightly higher voltage rails.
- PCB real estate is constrained, and a small 6-pin UMT6 package is preferred.
Choose CSD87501L when…
- You need to switch or drive loads in the multi-amp range (up to 14A continuous, 72A pulsed).
- Low on-resistance (7.8mΩ typical) is necessary to reduce conduction losses in high-current power stages or load switches.
- The design includes a gate driver capable of delivering sufficient current to handle the 40nC gate charge without excessive switching losses.
- Switching speed (rise/fall times ~260/712ns) is relevant, such as in PWM controllers or synchronous rectifiers.
- You require a device rated for operation down to -55°C and up to 150°C junction temperature, with better robustness and ESD protection.
Drop-in compatibility
There is no indication that the UM6K33NTN and CSD87501L are pin-compatible or footprint-compatible. The UM6K33NTN comes in a 6-pin UMT6 (SOT-363 style) package, while the CSD87501L is in a 10-pin Picostar (XFLGA) package measuring approximately 3.37×1.47mm. The different pin counts and package dimensions mean substituting one for the other will require PCB redesign and schematic changes. Additionally, the CSD87501L’s common drain configuration differs from the UM6K33NTN’s unspecified configuration, possibly requiring circuit re-architecting.
Alternatives to consider
- BSS138 (NXP / ON Semiconductor): Single N-channel MOSFET with low gate threshold (~1.3V