UM6K33NTN vs BSZ120P03NS3GATMA1 MOSFET Comparison
Quick verdict
For low-current, dual N-channel switching applications requiring a compact footprint and logic-level drive, the UM6K33NTN is the better choice due to its low gate threshold and integration of two devices in one package. Conversely, for high-current P-channel switching or load switching with significant power dissipation, the BSZ120P03NS3GATMA1 excels with its low R_DS(on), high continuous current rating, and robust thermal capacity.
Spec comparison table
| Spec | UM6K33NTN | BSZ120P03NS3GATMA1 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | P-Channel | UM6K33NTN offers dual N-MOSFETs; BSZ120P03NS3GATMA1 is a single P-MOSFET |
| Continuous Drain Current (I_D) | 200 mA @ 25°C | 11 A (Ta), 40 A (Tc) | BSZ120P03NS3GATMA1 supports ~55x higher continuous current; critical for power switching |
| Drain-Source Voltage (V_DS) | 50 V | 30 V | UM6K33NTN supports higher voltage, suitable for 48 V rails or similar |
| Gate Drive Voltage | Logic Level (1.2 V drive) | 6 V, 10 V | UM6K33NTN can be driven directly from low-voltage logic (1.2 V), BSZ120P03NS3GATMA1 needs higher gate voltage drive |
| Gate Charge (Q_g) | Not specified | 45 nC @ 10 V | BSZ120P03NS3GATMA1 has significant gate charge, impacting switching speed and driver sizing |
| Input Capacitance (C_iss) | 25 pF @ 10 V | 3360 pF @ 15 V | UM6K33NTN’s input capacitance is ~135x smaller, enabling faster switching and lower driver losses |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount |
| Operating Temperature Range | Up to 150°C (TJ) | -55°C to 150°C (TJ) | BSZ120P03NS3GATMA1 specifies wider ambient temperature range, including cold environments |
| Package Case | 6-TSSOP (UMT6), SC-88, SOT-363 | 8-PowerTDFN | Different packages; BSZ120P03NS3GATMA1’s PowerTDFN supports better thermal dissipation |
| Power Dissipation | 120 mW | 2.1 W (Ta), 52 W (Tc) | BSZ120P03NS3GATMA1 supports >17x higher power dissipation at ambient and much higher at case |
| R_DS(on) max @ I_D, V_GS | 2.2 Ω @ 200 mA, 4.5 V | 12 mΩ @ 20 A, 10 V | BSZ120P03NS3GATMA1 offers orders of magnitude lower R_DS(on), critical for efficiency at high current |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Same technology |
| V_GS(th) max @ I_D | 1 V @ 1 mA | 3.1 V @ 73 µA | UM6K33NTN has a much lower threshold voltage, enabling logic-level drive |
| Supplier Device Package | UMT6 | PG-TSDSON-8 | Different package types, affecting PCB layout and thermal management |
| FET Feature | Logic Level Gate, 1.2 V drive | Not specified | UM6K33NTN optimized for low-voltage gate drive |
Design trade-offs
The UM6K33NTN and BSZ120P03NS3GATMA1 target fundamentally different power envelopes and switching paradigms. UM6K33NTN’s dual N-channel configuration with a 1.2 V logic-level gate drive and very low input capacitance (25 pF) makes it suitable for low-current signal switching or load switching in battery-powered or low-voltage logic-controlled environments. The small package and low power dissipation (120 mW max) simplify thermal management but limit its use to sub-200 mA currents.
In contrast, the BSZ120P03NS3GATMA1 supports continuous drain currents up to 11 A (ambient) and 40 A (case), with an extremely low R_DS(on) of 12 mΩ at 20 A and 10 V gate drive. This makes it suitable for high-current load switching, reverse polarity protection, or high-efficiency DC-DC converter low-side switches. However, the device requires a stronger gate driver capable of supplying 45 nC of gate charge at 10 V, which means larger gate driver transistors or dedicated MOSFET drivers. The much higher input capacitance (3360 pF) will slow switching speeds and increase switching losses unless the driver is designed accordingly.
Thermally, the BSZ120P03NS3GATMA1’s PowerTDFN-8 package offers better heat dissipation capability, supporting power dissipation up to 2.1 W at ambient and 52 W at case, compared to the UM6K33NTN’s 120 mW max. This difference is reflected in the continuous current specs and must be carefully considered in board layout, including copper area and thermal vias.
From a layout perspective, the UM6K33NTN’s smaller package and dual transistor integration reduce PCB area and BOM count in low-current switching applications. The BSZ120P03NS3GATMA1’s larger package and single device design require more PCB area but facilitate high-current conduction paths and thermal management.
Cost-wise, at volume, the UM6K33NTN is likely less expensive due to lower silicon area and simpler package, but this must be balanced against the need for multiple discrete devices if more channels or higher current ratings are needed. The BSZ120P03NS3GATMA1’s higher power capabilities justify its higher cost in power stages.
Use-case fit
Choose UM6K33NTN when…
- You need a compact dual N-channel MOSFET array for low-current switching (~200 mA max).
- The gate drive voltage is limited to 1.2–4.5 V logic levels, such as from microcontrollers or low-voltage FPGAs.
- Your design operates up to 50 V and requires low input capacitance for fast switching at low currents.
- Thermal dissipation constraints limit power to under 0.12 W per device.
- You want to minimize PCB area and component count for signal-level switching or load switching.
Choose BSZ120P03NS3GATMA1 when…
- Your application involves high continuous load currents (up to 11 A ambient, 40 A case).
- Low R_DS(on) at 10 V gate drive is critical for efficiency and thermal management.
- The system can provide a 6–10 V gate drive voltage with sufficient drive strength to handle 45 nC gate charge.
- You need a P-channel MOSFET for high-side switching or load switching where N-channel devices are impractical.
- The design requires robust thermal performance with power dissipation above 2 W.
Drop-in compatibility
These parts are not pin-compatible or footprint-compatible. The UM6K33NTN is a dual N-channel MOSFET array in a 6-pin UMT6/SC-88/SOT-363 package, while the BSZ120P03NS3GATMA1 is a single P-channel MOSFET in an 8-pin PowerTDFN package. Substitution would require significant PCB redesign, including changes to the gate drive circuitry (logic-level vs. 6–10 V drive), thermal layout, and possibly the switching topology due to polarity and device count differences. No direct drop-in substitution is possible.
Alternatives to consider
- BSS138 (N-Channel, 50 V, logic-level MOSFET): Common dual MOSFET alternative for low-current switching with similar gate drive requirements as UM6K33NTN.
- IRLZ44N (N-Channel, logic-level, 55 V, high current): For higher current needs than UM6K33NTN but still logic-level drive.
- Si2333CDS (P-Channel, 30 V, low R_DS(on)): Alternative P-channel MOSFET with lower gate charge and moderate current rating for applications similar to BSZ120P03NS3GATMA1.