UM6K33NTN vs AON7611 MOSFET Arrays: Technical Comparison
Quick verdict
For low-voltage, low-current switching or level-shifting applications requiring minimal PCB area and ultra-low gate drive voltage, the UM6K33NTN is the clear choice due to its 1.2 V logic-level gate and ultra-low continuous drain current rating (200 mA). Conversely, for power switching or load-driving scenarios demanding high current (up to 18.5 A) and low conduction losses, the AON7611 outperforms with a significantly lower R_DS(on) and much higher power dissipation capability, albeit at a higher gate drive voltage and larger package.
Spec comparison table
| Spec | UM6K33NTN | AON7611 | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel | N and P-Channel, Common Drain | AON7611 supports complementary pairs, enabling half-bridge or push-pull configurations. |
| Max Drain-Source Voltage (V_DS) | 50 V | 30 V | UM6K33NTN offers higher voltage margin for 30–50 V rails. |
| Continuous Drain Current (I_D) | 200 mA | 9 A (N), 18.5 A (P) | AON7611 supports >40× higher current, suitable for high-power loads. |
| Max Power Dissipation (P_D) | 120 mW | 1.5 W | AON7611 can dissipate >10× more power, important for thermal budgeting. |
| R_DS(on) @ I_D, V_GS | 2.2 Ω @ 200 mA, 4.5 V | 50 mΩ @ 4 A, 10 V | AON7611 has dramatically lower conduction losses at its rated current. |
| Gate Threshold Voltage (V_GS(th)) | 1 V @ 1 mA | 2.5 V @ 250 µA | UM6K33NTN has lower threshold, enabling operation with very low gate drive voltages. |
| Gate Charge (Q_g) | Not specified | 10 nC @ 10 V | AON7611 has moderate gate charge, impacting switching speed and driver sizing. |
| Input Capacitance (C_iss) | 25 pF @ 10 V | 170 pF @ 15 V | UM6K33NTN’s lower input capacitance reduces gate drive losses and EMI. |
| Operating Temperature Range (T_j) | Up to 150 °C | -55 °C to 150 °C | AON7611 rated for wider ambient range; UM6K33NTN datasheet only specifies max TJ. |
| Package | 6-TSSOP (UMT6), SC-88, SOT-363 | 8-PowerVDFN (3x3 mm) | UM6K33NTN smaller package, better for space-constrained designs. |
| Mounting Type | Surface Mount | Surface Mount | Both support standard SMT processes. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Both use standard MOSFET tech. |
Design trade-offs
The UM6K33NTN is optimized for ultra-low current switching with minimal gate drive voltage (logic-level at 1.2 V), making it suitable for interfacing directly with low-voltage digital logic or battery-powered systems where gate drive headroom is limited. Its very low input capacitance (25 pF) helps keep switching losses and EMI low in high-frequency logic-level switching applications. However, its high R_DS(on) of 2.2 Ω at only 200 mA means it cannot efficiently handle power loads or large currents without significant voltage drop and power dissipation.
In contrast, the AON7611 targets high-current power switching with complementary N- and P-channel devices in a compact 3x3 mm PowerVDFN package. It supports continuous currents up to 18.5 A on the P-channel side, with a low R_DS(on) of 50 mΩ at 4 A, drastically reducing conduction losses and thermal stress in power stages. Its higher gate charge (10 nC) and input capacitance (170 pF) require a stronger gate driver capable of supplying higher transient currents to switch efficiently, especially at higher frequencies. This increases driver complexity and power consumption but is typical for power MOSFET arrays.
Thermally, the AON7611’s 1.5 W dissipation rating and exposed pad package enable better heat sinking and higher power density, whereas the UM6K33NTN’s 120 mW dissipation and smaller package limit it to signal-level or low-power switching. Designers should consider PCB thermal layout carefully with the AON7611 to maximize heat spreading, while the UM6K33NTN may require less thermal management.
From a layout perspective, the AON7611’s exposed pad and dual N/P-channel configuration allow integration into half-bridge or synchronous rectifier topologies, reducing component count. The UM6K33NTN’s dual N-channel devices in a smaller footprint are better suited for multiplexed switching or signal routing.
Cost-wise, the UM6K33NTN is likely less expensive per unit and per board area given its simpler specs and smaller package, but the AON7611’s higher power capability justifies a higher price in power applications.
Use-case fit
Choose UM6K33NTN when…
- You need dual low-side switches for signal-level loads below 200 mA at up to 50 V.
- Operating with a low-voltage digital logic supply (1.2–4.5 V) that cannot provide strong gate drive current.
- Minimizing PCB real estate and gate drive power in battery-powered or portable devices.
- Switching low-current loads where power dissipation must be kept below 120 mW per FET.
- You require a simple dual N-channel array for level shifting or analog mux functions.
Choose AON7611 when…
- You require high current switching with continuous load currents up to 9 A (N-channel) or 18.5 A (P-channel).
- Implementing half-bridge or push-pull circuits thanks to complementary N/P MOSFET pairs.
- Operating at voltages up to 30 V with significant power dissipation (up to 1.5 W).
- Driving motors, solenoids, or power rails where low conduction losses (50 mΩ) improve efficiency and thermal performance.
- Using a gate driver capable of delivering higher peak currents for fast switching and controlled EMI.
Drop-in compatibility
The UM6K33NTN and AON7611 are not pin-compatible. The UM6K33NTN is packaged in a 6-pin TSSOP/SC-88 (SOT-363) style with two N-channel MOSFETs, while the AON7611 comes in an 8-pin 3x3 mm PowerVDFN package with complementary N- and P-channel MOSFETs arranged in a common-drain configuration. Their different pinouts, package sizes, and device configurations mean direct substitution requires PCB redesign and circuit re-evaluation. Gate drive requirements and voltage/current ratings also differ significantly.
Alternatives to consider
- Si2302DS (Vishay): Low-voltage dual N-channel MOSFET array with sub-1 Ω R_DS(on) for small-signal loads; useful for low-power switching.
- BSS138 (ON Semiconductor): Popular single N-channel MOSFET with low gate threshold and low input capacitance; good for level shifting and signal switching.
- IRF7319 (Infineon): Dual N- and P-channel MOSFET pair in a single package with low R_DS(on), suitable for power switching and synchronous rectification.