UM6K33NTN vs 2N7002PS,115 MOSFET Arrays: Component Comparison for Hardware Engineers
Quick verdict
For low-current, low-voltage switching in space-constrained logic-level applications, the UM6K33NTN is preferable due to its lower gate threshold voltage and smaller input capacitance, simplifying drive requirements. For higher current capacity, improved power dissipation, and automotive-grade reliability, the 2N7002PS,115 outperforms with better continuous drain current, lower R_DS(on) at a higher current, and AEC-Q100 qualification.
Spec comparison table
| Spec | UM6K33NTN | 2N7002PS,115 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Equivalent configuration, no difference |
| Continuous Drain Current (I_D @ 25°C) | 200 mA | 320 mA | 2N7002PS,115 supports 60% higher continuous current, better for higher load |
| Drain-Source Voltage (V_DS max) | 50 V | 60 V | 2N7002PS,115 has 20% higher voltage rating, better for higher voltage rails |
| Gate Drive Feature | Logic Level Gate, 1.2 V Drive | Logic Level Gate | UM6K33NTN has lower gate threshold, easier to drive at low voltages |
| Gate Charge (Q_g max @ V_GS) | Not specified | 0.8 nC @ 4.5 V | 2N7002PS,115 gate charge known and relatively low, impacts switching speed and driver sizing |
| Input Capacitance (C_iss max @ V_DS) | 25 pF @ 10 V | 50 pF @ 10 V | UM6K33NTN has half the input capacitance, reducing gate drive losses and switching losses |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| Operating Temperature Range (T_J) | 150°C | 150°C | Equivalent thermal capability |
| Package Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | Physically compatible package types |
| Maximum Power Dissipation (P_D) | 120 mW | 420 mW | 2N7002PS,115 can dissipate 3.5x more power, better for thermal margin |
| R_DS(on) (max) | 2.2 Ω @ 200 mA, 4.5 V | 1.6 Ω @ 500 mA, 10 V | 2N7002PS,115 has lower on-resistance at higher current and gate voltage, better conduction losses |
| Supplier Device Package | UMT6 | 6-TSSOP | UM6K33NTN uses UMT6 package variant, 2N7002PS,115 standard 6-TSSOP; check footprint compatibility |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent |
| Gate Threshold Voltage (V_GS_th max) | 1 V @ 1 mA | 2.4 V @ 250 µA | UM6K33NTN has significantly lower threshold voltage, enabling logic-level drive from 1.2 V |
| Qualification/Grade | Not specified | AEC-Q100 / Automotive | 2N7002PS,115 qualified for automotive, suitable for higher reliability requirements |
Design trade-offs
The UM6K33NTN’s primary advantage lies in its low gate threshold voltage (1 V max at 1 mA) and low input capacitance (25 pF), making it attractive in ultra-low voltage logic-level drives, such as direct MCU GPIO control at 1.8–3.3 V without a dedicated driver IC. This reduces complexity and power consumption in gate drive circuitry. However, its maximum continuous current of 200 mA and higher R_DS(on) of 2.2 Ω at 4.5 V gate drive limit its suitability for moderate to high current switching. The maximum power dissipation of 120 mW requires careful thermal design, especially in ambient conditions above 50°C, and likely mandates conservative duty cycles and PCB thermal management.
In contrast, the 2N7002PS,115 supports 320 mA continuous drain current and dissipates up to 420 mW, allowing it to handle significantly higher loads and power without derating. Its lower R_DS(on) of 1.6 Ω at 500 mA and 10 V gate drive translates into lower conduction losses, improving efficiency and reducing heat generation in switching applications. The trade-off is a higher gate threshold voltage (2.4 V max) and larger input capacitance (50 pF), which means the MOSFET requires a stronger gate drive voltage (typically 4.5–10 V) and more gate charge, influencing driver selection and switching speed. The known gate charge (0.8 nC) allows more precise gate driver design.
Thermally, the 2N7002PS,115’s 3.5x higher power dissipation rating and automotive-grade qualification (AEC-Q100) make it more robust in harsh environments and higher temperature applications. This is critical for automotive or industrial designs requiring wide temperature ranges and reliability. The UM6K33NTN lacks published qualification data, limiting its use in safety-critical applications.
From a layout standpoint, both parts come in similar 6-pin TSSOP packages, but the UM6K33NTN’s smaller UMT6 package variant may offer slight board space savings at the cost of potentially more challenging routing due to tighter pin pitch. The lower input capacitance of the UM6K33NTN eases EMI and switching noise concerns, beneficial in sensitive analog or RF circuits.
Cost-wise, the 2N7002PS,115’s automotive qualification and higher power rating typically command a higher unit price, but amortized over volume, the improved performance and reliability justify the cost for demanding applications. The UM6K33NTN is likely cheaper and better suited for low-cost, low-power consumer electronics or portable devices.
Use-case fit
Choose UM6K33NTN when…
- Your application runs at low supply voltages (1.2–3.3 V) where direct logic-level drive without a dedicated gate driver is required.
- Switching currents stay below 200 mA, such as signal-level switching, load switching in low-current sensor interfaces, or level shifting.
- PCB space is at a premium and the smaller UMT6 package helps save board area.
- Minimizing gate charge and input capacitance is critical to reduce switching losses or EMI in sensitive mixed-signal environments.
- Thermal dissipation is low and ambient temperatures remain moderate, allowing operation without forced cooling or heatsinking.
Choose 2N7002PS,115 when…
- Your design requires switching currents up to 320 mA with improved efficiency and lower conduction losses.
- Operating voltage can be up to 60 V, providing more margin for transient voltages or higher voltage rails.
- Automotive or industrial-grade qualification (AEC-Q100) is mandatory for reliability and compliance.
- Thermal dissipation of up to 420 mW is necessary to handle continuous or peak power without derating.
- You have a gate driver or MCU output capable of providing 4.5–10 V gate drive voltage with sufficient drive strength.
Drop-in compatibility
Both devices share a dual N-channel MOSFET configuration and are available in 6-pin small-outline packages (TSSOP variants), but the UM6K33NTN uses a UMT6 package variant, while the 2N7002PS,115 is in a standard 6-TSSOP package. The pinout is not explicitly stated as identical in the source data. Without explicit cross-reference or pin mapping from datasheets, assume they are not guaranteed to be pin-for-pin compatible.
Substituting one for the other without verifying pinout and footprint risks damaging the device or the circuit. Also, differing maximum gate voltages and gate drive requirements mean firmware or driver circuits may need adjustment to avoid under-driving or over-stressing the MOSFET gates.
Alternatives to consider
- Si2302DS (Vishay): Another dual N-channel MOSFET with a logic-level gate and similar voltage rating, worth exploring for slightly higher current capability.
- BSS138 (ON Semiconductor): Single N-channel MOSFET, commonly used in low-voltage logic switching, useful if a single device per channel is acceptable.
- FDC633N (Fairchild): Single N-channel MOSFET with low R_DS(on) and logic-level drive, suitable for low-voltage, moderate-current applications.