UM6K33NTN vs 2N7002BKS,115 MOSFET Array Comparison
Quick verdict
For low-current, low-voltage logic-level switching where minimal gate drive is critical, the UM6K33NTN’s 1.2 V logic-level gate and low input capacitance make it the better choice. Conversely, for applications requiring higher current capability, greater power dissipation, and higher voltage margin, the 2N7002BKS,115 offers superior performance despite a higher gate threshold and input capacitance.
Spec comparison table
| Spec | UM6K33NTN | 2N7002BKS,115 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Equivalent dual N-MOSFET arrays |
| Drain-Source Voltage Max (V) | 50 V | 60 V | 2N7002BKS,115 supports 10 V higher voltage, better for 48 V or 60 V rails |
| Continuous Drain Current Id @ 25°C | 200 mA | 300 mA (Ta) | 2N7002BKS,115 offers 50% higher continuous current capacity |
| Power Dissipation Max (mW) | 120 mW | 295 mW | 2N7002BKS,115 can dissipate more than twice the power, improving thermal margin |
| Rds(on) Max @ Id, Vgs | 2.2 Ω @ 200 mA, 4.5 V | 1.6 Ω @ 500 mA, 10 V | 2N7002BKS,115 has lower Rds(on) but measured at higher current and gate voltage |
| Input Capacitance Ciss Max @ Vds=10V | 25 pF | 50 pF | UM6K33NTN has half the input capacitance, reducing gate charge and switching losses |
| Gate Threshold Voltage Vgs_th Max | 1 V @ 1 mA | 2.1 V @ 250 µA | UM6K33NTN turns on at lower gate voltage, better for low-voltage logic level drive |
| Gate Drive Feature | Logic Level Gate, 1.2 V Drive | Logic Level Gate | UM6K33NTN explicitly supports 1.2 V drive, better for ultra-low-voltage gate drive |
| Max Operating Junction Temperature | 150 °C | 150 °C | Equivalent operating temperature range |
| Package | 6-TSSOP (UMT6 / SOT-363) | 6-TSSOP (SOT-363) | Same package outline, facilitates PCB footprint reuse |
| Power Dissipation Typical (mW) | 120 mW | 295 mW | 2N7002BKS,115 typical dissipation more than double UM6K33NTN |
| Gate Charge Qg Max @ Vgs | Not specified | 0.6 nC @ 4.5 V | Lower gate charge on 2N7002BKS,115 may improve switching speed despite higher capacitance |
| Leakage Current Max @ 25°C | Not specified | 1 µA | 2N7002BKS,115 leakage is low and specified, useful for low-leakage designs |
| Drain Current Peak | Not specified | 1.2 A | 2N7002BKS,115 supports short pulse peak currents, enabling transient load handling |
| Switching Times (td_on/off, tfall) | Not specified | td_on typ 10 ns, td_off typ 24 ns, tfall typ 7 ns | 2N7002BKS,115 has documented switching speed, useful for high-frequency switching |
| ESD Rating | Not specified | 2 kV | 2N7002BKS,115 includes ESD robustness rating, beneficial in harsh environments |
| Thermal Resistance (typical per transistor) | Not specified | 370 K/W | Known thermal resistance on 2N7002BKS,115 helps thermal design calculations |
| Qualification | Not specified | AEC-Q101 | 2N7002BKS,115 is automotive qualified, potentially more reliable in automotive applications |
| Storage Temperature Range | Not specified | -65 to 150 °C | 2N7002BKS,115 has extended storage range |
Design trade-offs
The UM6K33NTN is optimized for low-voltage gate drive environments with a gate threshold around 1 V and guaranteed logic-level operation at 1.2 V, making it suitable for modern low-voltage digital logic interfaces. Its substantially lower input capacitance (25 pF vs 50 pF) reduces gate charge requirements and switching losses, which can be significant in low-current, low-frequency switching or battery-powered systems. However, its maximum continuous drain current is limited to 200 mA, and its maximum power dissipation is only 120 mW, constraining its use in higher load or thermal environments.
The 2N7002BKS,115 supports a higher continuous current of 300 mA and a peak drain current of 1.2 A, which is beneficial for transient loads or slightly higher power switching tasks. Its Rds(on) is lower at 1.6 Ω at 10 V gate drive and 500 mA, but this comes at the cost of a higher gate threshold voltage (~2.1 V max) and double the input capacitance, which means that gate drive circuits must supply more charge and handle a higher gate voltage to fully enhance the device. Additionally, the 2N7002BKS,115 supports a higher maximum voltage (60 V), increasing design margin for 48 V or 60 V rails.
Thermally, the 2N7002BKS,115 can dissipate more than twice the power of the UM6K33NTN, making it more robust in applications with limited heat sinking or higher ambient temperatures. Its documented switching times and ESD rating add to its suitability for automotive or industrial environments where switching speed and robustness matter.
From a layout perspective, both devices share the same 6-TSSOP package (SOT-363), implying footprint compatibility. However, the higher gate charge and input capacitance of the 2N7002BKS,115 demand careful gate driver layout and possibly stronger gate drive capability to avoid slow switching and excessive switching losses. The UM6K33NTN’s lower gate drive requirement simplifies gate drive design but limits current handling.
Cost-wise, the 2N7002BKS,115’s automotive qualification and higher ratings may come at a premium compared to the UM6K33NTN, which appears to target lower power, general-purpose logic-level switching.
Use-case fit
Choose UM6K33NTN when…
- Your design uses 1.8 V or 3.3 V logic rails and gate drive voltage is limited to ~1.2–2.5 V.
- The maximum load current per channel is below 200 mA, such as small signal switching or level shifting.
- Minimizing gate drive power to extend battery life in portable or IoT devices is critical.
- Input capacitance must be minimized to reduce EMI or switching losses in sensitive analog-mixed circuits.
- Thermal dissipation capability is limited and load currents are consistently low.
Choose 2N7002BKS,115 when…
- The application requires switching loads up to 300 mA continuous or brief peaks up to 1.2 A (e.g., LED drivers, low-power motors).
- Operating voltage rails up to 60 V must be supported, offering more margin than 50 V rated devices.
- Automotive or industrial qualification (AEC-Q101) is required for reliability and quality assurance.
- Gate drive voltage is 4.5 V or higher, and the design can accommodate the higher gate threshold and charge.
- Faster switching speeds and enhanced ESD protection are necessary for robust high-frequency switching applications.
Drop-in compatibility
Both devices share the 6-TSSOP package and are dual N-channel MOSFET arrays, commonly in the SOT-363 footprint. This strongly suggests footprint compatibility. However, pin-to-pin compatibility is not explicitly confirmed by the datasheets; the internal pin assignments (source, gate, drain) and channel arrangements would need to be verified in the datasheets before substituting one for the other. Differences in gate threshold and drive requirements mean that even if pin-compatible, the switching characteristics and drive levels will differ, potentially requiring gate drive circuitry adjustments.
Alternatives to consider
- BSS138 (ON Semiconductor or others) – Classic logic-level N-MOSFET, low gate threshold (~1.5 V) but limited current (~200 mA), widely used and well-documented.
- Si2302DS (Vishay) – 20 V, logic-level N-MOSFET with very low Rds(on), suitable for low-voltage switching with higher efficiency.
- IRLML6344 (Infineon) – Ultra-low Rds(on) logic-level MOSFET, capable of handling currents >300 mA with low gate threshold, good for efficient low-voltage switching.
This comparison should guide engineers in selecting between the UM6K33NTN and 2N7002BKS,115 based on exact load, voltage, gate drive, and thermal requirements rather