UM6K33NTN vs 2N7002-G MOSFET Comparison

Quick verdict

For low-current, low-voltage switching where dual MOSFETs in a compact package are needed, the UM6K33NTN wins due to its dual-channel configuration and logic-level gate drive at 1.2 V. For single-switch applications requiring higher voltage margin and higher continuous current capability, the 2N7002-G offers better voltage rating (60 V vs 50 V) and higher power dissipation, making it more suitable for load switching up to 115 mA continuous and transient currents up to 500 mA.

Spec comparison table

SpecUM6K33NTN2N7002-GNotes
ConfigurationDual N-Channel MOSFETsSingle N-Channel MOSFETUM6K33NTN integrates two devices, saving board space for dual-switch applications.
Drain-Source Voltage Max (V)50 V60 VHigher voltage rating on 2N7002-G allows more margin in 48 V systems or transient spikes.
Continuous Drain Current @ 25°C (mA)200 mA115 mA (Tj)UM6K33NTN supports higher continuous current, but 2N7002-G’s max rating is 500 mA (max).
Max Power Dissipation (mW)120 mW360 mW (Ta)2N7002-G supports 3x higher power dissipation at ambient temperature, better thermal margin.
On-Resistance (Rds_ON) max @ specified Id and Vgs2.2 Ω @ 200 mA, 4.5 V7.5 Ω @ 500 mA, 10 VUM6K33NTN has significantly lower Rds(on) at its rated current and gate drive voltage.
Gate Threshold Voltage (Vth) max1 V @ 1 mA2.5 V @ 250 µALower threshold on UM6K33NTN enables reliable logic-level drive starting around 1V.
Input Capacitance (Ciss) max25 pF @ 10 V50 pF @ 25 VUM6K33NTN has roughly half the input capacitance, reducing gate drive losses and switching delays.
Package Type6-TSSOP, SC-88, SOT-363 (UMT6)SOT-23 (TO-236AB), 3-leadUM6K33NTN is dual MOSFET array in a 6-pin package; 2N7002-G is single device in 3-pin SOT-23.
Mounting TypeSurface MountSurface MountBoth are SMT, suitable for automated assembly.
Operating Temperature Range (TJ)Up to 150 °C-55 °C to 150 °C2N7002-G offers extended low-temperature operation for automotive/industrial applications.
Power Dissipation Thermal Resistance (typ)Not specified203 °C/W (typ)2N7002-G datasheet provides thermal resistance; UM6K33NTN does not, making thermal design less straightforward.
Maximum Gate-Source Voltage (Vgs max)Not specified±30 V2N7002-G supports higher gate voltage, useful for robust gate drive or tolerance to transients.
Drive Voltage for Rds(on) Specified4.5 V5 V, 10 VUM6K33NTN specified at lower gate drive voltage (4.5 V) with lower Rds(on), better for low-voltage logic drives.
Forward Transconductance (gm min)Not specified80 mS (min)2N7002-G provides a typical transconductance figure, useful for analog switching characterization.
Reverse Recovery Time (trr min)Not specified400 ns (min)2N7002-G provides switching speed data; UM6K33NTN does not, potentially impacting high-speed switching.
Gate Charge (Qg)Not specifiedNot specifiedNeither datasheet provides detailed gate charge, limiting dynamic loss comparison.
Diode Forward Voltage Drop (typ)Not specified1.2 V2N7002-G body diode forward drop is specified, important for synchronous rectification or inductive load switching.
Packaging Dimensions (Body length × width × height)Not specified1.30 mm × 2.90 mm × 1.12 mm2N7002-G is smaller single MOSFET; UM6K33NTN is larger due to dual MOSFET array.
Number of Pins63UM6K33NTN contains two MOSFETs, thus more leads; 2N7002-G is a single transistor.

Design trade-offs

The UM6K33NTN’s dual N-channel configuration within a single 6-pin UMT6 package is its primary differentiator, enabling designers to reduce board area and component count when two low-current MOSFETs are needed. This is particularly valuable in level shifting, load switching, or multiplexing circuits where multiple low-current switches are required close to each other. However, this integration comes with trade-offs: maximum continuous current per channel is limited to 200 mA, and maximum power dissipation is 120 mW, which tightens thermal design margins.

In contrast, the 2N7002-G is a single discrete MOSFET with a higher voltage rating (60 V vs 50 V), higher maximum power dissipation (360 mW), and a higher peak current capability (500 mA max vs 200 mA continuous for UM6K33NTN). The 2N7002-G’s higher Rds(on) at 7.5 Ω (max) at 500 mA and 10 V gate drive means it will dissipate more conduction losses at similar currents, but its higher voltage rating and power dissipation capability allow it to be used in more demanding switching roles with better thermal headroom.

Gate drive considerations are significant. The UM6K33NTN supports logic-level gate drive down to 1.2 V, with a low threshold voltage (~1 V max @ 1 mA), making it ideal for direct drive from low-voltage logic (1.8 V or 3.3 V). The 2N7002-G has a higher threshold voltage (up to 2.5 V max) and specifies Rds(on) at higher gate voltages (5 V, 10 V), so it may not fully switch on at 3.3 V gate drive, reducing efficiency and increasing losses. This makes the UM6K33NTN preferable for ultra-low voltage logic interfaces.

The input capacitance difference (UM6K33NTN: 25 pF max @ 10 V vs 2N7002-G: 50 pF max @ 25 V) impacts switching losses and gate driver requirements. Lower input capacitance on UM6K33NTN reduces gate charge and switching delay, beneficial in fast switching or PWM applications with limited gate drive current. The 2N7002-G’s larger capacitance and slower reverse recovery time (400 ns min) may limit its use in very high-frequency switching but is acceptable for slower or low-frequency switching applications.

Thermally, the 2N7002-G’s higher power dissipation rating (360 mW vs 120 mW) and defined thermal resistance (203 °C/W typical) provide a clearer framework for thermal design, especially in ambient temperatures down to -55 °C. The UM6K33NTN’s thermal data is sparse, so more conservative derating or empirical testing may be required.

Cost and availability may also be factors: the UM6K33NTN integrates two MOSFETs in a single package, potentially reducing PCB area and assembly costs, but is less common than the widely used 2N7002-G, which benefits from mature supply chains and broad distribution.

Use-case fit

Choose UM6K33NTN when…

Choose 2N7002-G when…