UM6K33NTN vs 2EDN7524GXTMA1: Component Comparison
Quick verdict
For simple low-current switching or load switching up to 200mA at 50V, the UM6K33NTN dual MOSFET array is the straightforward, compact choice with minimal external components. For gate driving power MOSFETs or GaN FETs in high-speed switching applications requiring up to 5A peak sourcing/sinking, the 2EDN7524GXTMA1 gate driver IC is the clear winner, offering precise timing and integrated driver capability.
Spec comparison table
| Spec | UM6K33NTN | 2EDN7524GXTMA1 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) MOSFETs | 2 independent low-side gate drivers | UM6K33NTN contains MOSFETs, 2EDN7524GXTMA1 is a driver IC. Different categories, not directly comparable. |
| Max Drain-Source Voltage (Vds) | 50 V | 20 V (max supply voltage) | UM6K33NTN can switch higher voltages as a MOSFET. 2EDN7524GXTMA1 drives MOSFETs, limited by supply voltage. |
| Continuous Drain Current @ 25°C | 200 mA | N/A (driver output current: 5 A peak) | UM6K33NTN rated for low current switching; 2EDN7524GXTMA1 provides high peak gate drive current. |
| Max Power Dissipation | 120 mW | Not directly specified (driver IC) | UM6K33NTN limited by MOSFET dissipation; 2EDN7524GXTMA1 power depends on load and switching frequency. |
| Rds(on) @ Id, Vgs | 2.2 Ω @ 200 mA, 4.5 V | 0.35 – 1.2 Ω output resistance | UM6K33NTN MOSFET on-resistance is high but acceptable for low current; 2EDN7524GXTMA1 output resistance is low, reducing driver losses. |
| Gate Drive Voltage | Logic level, 1.2 V drive | Supply voltage 4.5 – 20 V (typ 8.6 V) | UM6K33NTN designed for direct logic-level drive; 2EDN7524GXTMA1 requires 5–20 V supply for gate drive. |
| Input Capacitance (Ciss) | 25 pF @ 10 V | N/A (driver input) | UM6K33NTN MOSFET gate capacitance is low, simplifying drive. 2EDN7524GXTMA1 input capacitance not listed. |
| Operating Temperature Range | Up to 150 °C (TJ) | -40 °C to 150 °C (TJ) | Both rated for automotive-grade temperature range; 2EDN7524GXTMA1 supports wider ambient range. |
| Package | 6-TSSOP (UMT6), SC-88, SOT-363 | 8-WDFN Exposed Pad (PG-WSON-8-1) | UM6K33NTN is smaller footprint but 2EDN7524GXTMA1 has exposed pad for better thermal dissipation. |
| Mounting Type | Surface Mount | Surface Mount | Both surface mount, compatible with standard SMT processes. |
| Junction Temperature Max | 150 °C | 150 °C | Equal thermal limits; actual dissipation depends on application. |
| Gate Threshold Voltage (Vgs_th) | 1 V @ 1 mA | N/A (driver IC input) | UM6K33NTN MOSFET threshold voltage low for logic level switching. 2EDN7524GXTMA1 input thresholds vary. |
| Output Current (Peak Source/Sink) | 200 mA max drain current | 5 A source and sink (typical) | 2EDN7524GXTMA1 provides very high peak currents to rapidly charge/discharge MOSFET gates. |
| Propagation Delay (Input to Output) | N/A (MOSFET, no propagation delay) | 15 – 25 ns (typ) | 2EDN7524GXTMA1 offers fast, deterministic propagation delay for gate drive signals. |
| Rise/Fall Time | N/A | Rise ~10 ns, Fall ~4.5 – 5.5 ns (typ) | 2EDN7524GXTMA1 supports very fast switching, critical for high-frequency applications. |
| ESD Capability | Not specified | 1.5 kV Charged Device Model, 2.5 kV HBM | 2EDN7524GXTMA1 has documented ESD robustness, important for gate driver ICs. |
| Input Voltage Range | N/A (MOSFET gate) | -5 V to +20 V | 2EDN7524GXTMA1 input tolerant to wide voltage range; UM6K33NTN requires logic-level gate drive. |
| Undervoltage Lockout (UVLO) | N/A | 4.2 V or 8 V threshold with hysteresis | 2EDN7524GXTMA1 includes UVLO for supply monitoring, enhancing system reliability. |
| Thermal Resistance (Junction to Board) | Not specified | 52 K/W (WSON-8, typ) | 2EDN7524GXTMA1 package with exposed pad offers better thermal path than UM6K33NTN. |
| Number of Channels | 2 MOSFETs | 2 independent drivers | Both have two channels, but functionally different (MOSFET switches vs gate drivers). |
Design trade-offs
The UM6K33NTN is a simple dual N-channel MOSFET array designed for low current (200mA max drain current) and moderate voltage (50 V). Its logic-level gate drive (1.2 V typical) lets you switch directly from low-voltage digital outputs without gate driver ICs, reducing BOM and layout complexity. However, its relatively high Rds(on) of 2.2 Ω at 200mA means conduction losses scale poorly if currents rise, and it is unsuitable for driving power MOSFET gates or high-speed switching loads.
In contrast, the 2EDN7524GXTMA1 is a dedicated low-side gate driver IC capable of sourcing and sinking up to 5 A peak, designed to drive external MOSFET or GaN FET gates efficiently. It requires a separate power supply in the 4.5 V to 20 V range, with built-in undervoltage lockout and ESD protection. The driver output resistance (0.35 Ω to 1.2 Ω typical) is low enough to allow high-speed switching with rise/fall times below 10 ns, critical in minimizing switching losses in high-frequency converters or motor drives.
Thermally, the UM6K33NTN’s small 6-TSSOP or SC-88 package limits power dissipation to around 120mW, suitable for low-current loads but not for continuous high-power operation. The 2EDN7524GXTMA1 WSON-8 package includes an exposed pad, improving heat dissipation capacity, which is important given the high transient currents it handles during gate switching. Layout for the 2EDN7524GXTMA1 must accommodate careful decoupling and thermal vias to maintain low junction temperatures.
From a firmware and timing perspective, the 2EDN7524GXTMA1 offers precise propagation delays (~15–25 ns) and channel-to-channel matching (~1 ns), enabling synchronous multi-phase or half-bridge gate driving. The UM6K33NTN, as a MOSFET array, has no such timing control and behaves as a passive switch.
Cost-wise, the UM6K33NTN is likely cheaper per unit and simpler to implement for low current, low frequency switching. The 2EDN7524GXTMA1 adds complexity and BOM cost but enables efficient high-speed gate driving that can significantly improve system efficiency and EMI.
Use-case fit
Choose UM6K33NTN when…
- You need a compact, dual low-current (up to 200mA) high-voltage (up to 50 V) switch for logic-level loads or signal switching.
- Your design requires minimal external components and can tolerate relatively high on-resistance.
- Gate drive complexity or power supply rails are limited, and switching speed is not critical.
- You are implementing simple load switching or level translation where integrated drivers are unnecessary.
- Thermal dissipation is low, and you can operate within the 120mW power limit.
Choose 2EDN7524GXTMA1 when…
- You need to drive external N-channel MOSFETs or GaN FETs with up to 5A peak sourcing/sinking current for fast switching.
- Precise timing and channel-to-channel delay matching are critical, such as in synchronous buck converters or motor drives.
- Your application operates at high switching frequencies where gate driver losses dominate efficiency and EMI.
- You require integrated undervoltage lockout and ESD protection on the gate driver.
- Thermal management is