UM6K33NTN vs 2EDL8024GXUMA1: Component Comparison for Power Electronics Design
Quick verdict
For low-current, low-voltage switching applications requiring compact dual MOSFETs with simple logic-level drive, the UM6K33NTN is the better choice due to its integrated MOSFET array and low gate threshold. For driving external power MOSFETs in half-bridge or full-bridge configurations where independent high- and low-side gate drive capability with high peak current output is needed, the 2EDL8024GXUMA1 gate driver IC is clearly superior.
Spec comparison table
| Spec | UM6K33NTN | 2EDL8024GXUMA1 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel MOSFETs (Dual) | 2 independent gate drivers (high-side, low-side) | UM6K33NTN is a MOSFET array; 2EDL8024GXUMA1 is a gate driver IC—different functional blocks. |
| Continuous drain current (Id) | 200mA @ 25°C | N/A (driver only) | UM6K33NTN handles 200mA load current directly; 2EDL8024GXUMA1 drives external MOSFETs. |
| Max drain-source voltage (Vds) | 50V | N/A (driver only) | UM6K33NTN rated for 50V MOSFET operation; 2EDL8024GXUMA1 supports up to 90V bootstrap voltage. |
| Fet feature | Logic Level Gate, 1.2V drive threshold | N/A (driver only) | UM6K33NTN can be driven by low-voltage logic directly; 2EDL8024GXUMA1 requires supply 8-17V. |
| Gate charge (Qg) max | Not specified | Not specified | Not available for both; cannot compare gate drive losses directly. |
| Input capacitance (Ciss) | 25pF @ 10V | N/A | UM6K33NTN MOSFETs have low input capacitance, beneficial for switching speed at low power. |
| Mounting type | Surface Mount | Surface Mount | Both are surface mount, but different package types. |
| Operating temperature range (TJ) | Up to 150°C | -40°C to 125°C | UM6K33NTN supports higher max junction temperature, beneficial in harsher thermal conditions. |
| Package case | 6-TSSOP, SC-88, SOT-363 (UMT6) | 8-VDFN Exposed Pad (PG-VDSON-8-4) | Different packages; 2EDL8024GXUMA1 has exposed pad for thermal dissipation. |
| Max power dissipation | 120mW | N/A (driver only) | UM6K33NTN limited to low power dissipation internally; 2EDL8024GXUMA1 is a driver, not a power device. |
| RDS(on) max @ Id, Vgs | 2.2Ω @ 200mA, 4.5V | N/A | UM6K33NTN has high RDS(on), suited only for low current applications. |
| Supplier device package code | UMT6 | PG-VDSON-8-4 | Different package footprints; not interchangeable. |
| Technology | MOSFET | MOSFET gate driver IC | Different device classes; UM6K33NTN is a MOSFET array, 2EDL8024GXUMA1 is a driver IC. |
| Vgs threshold max | 1V @ 1mA | N/A | UM6K33NTN can be driven at low gate voltages; 2EDL8024GXUMA1 needs higher supply voltage. |
| Channel type | N-Channel MOSFETs | Independent driver channels | 2EDL8024GXUMA1 supports independent high-side and low-side control. |
| Peak output source/sink current | N/A | 4A source / 4A sink | 2EDL8024GXUMA1 can drive large gate charge MOSFETs quickly, critical for high-speed switching. |
| Driven configuration | N/A | High-side, Low-side | 2EDL8024GXUMA1 suited for half-bridge driver topologies. |
| Input type | N/A | Non-inverting | 2EDL8024GXUMA1 logic input behavior is non-inverting, relevant for control logic design. |
| Voltage supply | N/A | 8V to 17V | 2EDL8024GXUMA1 requires dedicated supply voltage; UM6K33NTN is self-contained MOSFET. |
| Rise/fall time (typical) | N/A | 45ns / 45ns | 2EDL8024GXUMA1 enables fast switching of external MOSFETs. |
Design trade-offs
The UM6K33NTN and 2EDL8024GXUMA1 serve fundamentally different roles in power electronics circuits—one is a low-current dual MOSFET array optimized for direct switching at logic levels, the other a sophisticated gate driver IC designed to control external power MOSFETs in half-bridge configurations. This distinction drives the primary trade-offs in board design and application scope.
The UM6K33NTN integrates two N-channel MOSFETs with a maximum continuous current rating of only 200mA and a high RDS(on) of 2.2Ω at 4.5V gate drive, making it suitable for low-power load switching or signal-level multiplexing rather than power conversion. Its logic-level gate threshold of 1V allows direct drive from microcontroller GPIOs without additional gate drive circuitry, reducing BOM and layout complexity. However, the high on-resistance and low power dissipation rating (120mW) limit efficiency and thermal headroom, making it unsuitable for medium- or high-current loads.
Conversely, the 2EDL8024GXUMA1 is a dedicated gate driver IC that cannot switch loads itself but provides up to 4A peak source and sink currents to drive external N-channel MOSFETs. This capability enables rapid charging and discharging of large gate capacitances, which is critical to minimize switching losses and electromagnetic interference in high-frequency, high-current power stages. Its support for high-side (bootstrap) voltages up to 90V and independent high- and low-side channels make it ideal for half-bridge or full-bridge topologies, but it requires a separate MOSFET stage and a supply voltage between 8V and 17V. The exposed pad VDFN package of the 2EDL8024GXUMA1 aids thermal management during high-frequency operation, critical to maintaining reliability.
From a layout perspective, the UM6K33NTN’s small 6-TSSOP/SC-88 footprint simplifies compact, low-power designs. The 2EDL8024GXUMA1’s 8-pin exposed pad package demands careful thermal vias and ground planes for heat dissipation, and its gate drive signals need careful routing to minimize parasitic inductances that could degrade switching performance or cause ringing.
Firmware-wise, the UM6K33NTN requires minimal control complexity—simply toggling the MOSFET gates as logic outputs. The 2EDL8024GXUMA1 demands attention to input timing and supply sequencing, especially for bootstrap operation and avoiding shoot-through in half-bridge configurations.
Cost-wise, the UM6K33NTN is likely lower cost and simpler to implement in low-power switching circuits due to fewer external components. The 2EDL8024GXUMA1, being a specialized gate driver IC with advanced features, will have a higher unit cost and require additional external MOSFETs, increasing overall BOM and PCB area.
Use-case fit
Choose UM6K33NTN when…
- You need a simple dual N-channel MOSFET switch for loads under 200mA at voltages up to 50V, such as low-current power rails or signal multiplexing.
- Your design requires direct logic-level gate drive at 1–1.2V threshold without an external gate driver, minimizing complexity and cost.
- Board space is constrained and you prefer a small 6-TSSOP or SC-88 package with integrated MOSFETs.
- Thermal dissipation is low and the operating junction temperature may reach up to 150°C, such as in compact industrial or automotive control circuits.
- You want to replace discrete MOSFETs for improved matching and layout simplicity in low-current load switching.
Choose 2EDL8024GXUMA1 when…
- You are designing a half-bridge or full-bridge power stage that needs independent high-side and low-side N-channel MOSFET gate drive.
- The external MOSFETs have large gate charges requiring up to 4A peak gate drive currents to minimize switching losses and improve efficiency.
- The system supply voltage for gate drive is between 8V and 17V, and bootstrap high-side voltage can reach up to 90V.
- Fast switching times (~45ns rise/fall) are critical to reduce switching losses and EMI in high-frequency power converters or motor drives.
- Thermal management is important, and you can accommodate the exposed pad VDFN package