UM6K33NTN vs 1EDN7116UXTSA1: Component Comparison for Power Electronics Engineers

Quick verdict

For low-voltage, low-current switching applications requiring integrated MOSFET arrays, the UM6K33NTN is the clear choice due to its dual N-channel MOSFETs and logic-level drive. For high-side gate driving of high-voltage GaN or MOSFET transistors in power conversion stages, the 1EDN7116UXTSA1 excels as a dedicated driver IC with bootstrap capability up to 200 V, making it suitable for isolated or half-bridge topologies.

Spec comparison table

SpecUM6K33NTN1EDN7116UXTSA1Notes
Configuration2 N-Channel (Dual)1 driver (High-Side)UM6K33NTN contains MOSFETs; 1EDN7116UXTSA1 is a driver IC, not a switch.
Continuous Drain Current (Id)200 mAN/AOnly UM6K33NTN specifies Id; 1EDN7116UXTSA1 drives external MOSFETs.
Drain-Source Voltage (Vds max)50 VBootstrap voltage max 200 V1EDN7116UXTSA1 supports much higher voltage on the high side via bootstrap supply.
Fet FeatureLogic Level Gate, 1.2 V DriveGaN FET, MOSFET (N-Channel) driverUM6K33NTN is logic-level MOSFET; 1EDN7116UXTSA1 is a driver IC compatible with GaN/MOSFET.
Gate Charge (Qg)Not specifiedNot specifiedInsufficient data for direct gate charge comparison.
Input Capacitance (Ciss)25 pF @ 10 VNot specifiedUM6K33NTN has low input capacitance, beneficial for fast switching with low drive strength.
Mounting TypeSurface MountNot specifiedUM6K33NTN package known; 1EDN7116UXTSA1 package info missing.
Operating Temperature Range (TJ)150 °CNot specifiedUM6K33NTN rated for high junction temperature, better for thermal robustness.
Package Case6-TSSOP / SC-88 / SOT-363Not specifiedUM6K33NTN package is compact and industry-standard; 1EDN7116UXTSA1 package unknown.
Max Power Dissipation120 mWNot specifiedUM6K33NTN limited to 120 mW, suitable for low-power applications only.
RDS(on) Max @ Id, Vgs2.2 Ω @ 200 mA, 4.5 VNot specifiedUM6K33NTN RDS(on) is high, indicating low current capability and higher conduction losses.
Vgs Threshold Max @ Id1 V @ 1 mANot specifiedUM6K33NTN logic-level threshold means it can be driven directly by 1.2 V logic signals.

Design trade-offs

The UM6K33NTN is a dual N-channel MOSFET array optimized for low-voltage (50 V max) and low-current (200 mA max) applications. Its relatively high RDS(on) of 2.2 Ω at 200 mA and 4.5 V gate drive means conduction losses rise quickly if currents increase beyond its rating, limiting it to signal-level switching, load switching in low-power circuits, or level shifting. The logic-level gate threshold (1 V max) and input capacitance of 25 pF support direct interfacing to low-voltage logic with minimal drive complexity. Thermal dissipation must be carefully managed due to the low 120 mW power rating, but the 150 °C junction rating allows some margin in temperature stress.

In contrast, the 1EDN7116UXTSA1 is not a MOSFET but a high-side gate driver IC designed to drive external high-voltage GaN or MOSFET transistors. Its bootstrap voltage rating of 200 V allows it to handle high-side switching well beyond the UM6K33NTN’s 50 V MOSFET rating. The driver IC’s role is to provide the gate drive signal, typically with strong current capability to rapidly charge gate capacitances of external transistors, thus improving switching speed and efficiency. The lack of detailed RDS(on) or power dissipation specs means conduction losses are determined by the external transistor, not the driver itself. The absence of package and thermal data requires designers to consult the full datasheet for layout and thermal considerations, but the driver’s function inherently demands careful PCB layout to minimize parasitic inductances and ensure stable bootstrap operation.

From a firmware driver perspective, the UM6K33NTN’s logic-level MOSFETs can be directly driven by GPIO pins, simplifying control but limiting switching frequency and current. The 1EDN7116UXTSA1 requires a dedicated driver interface, likely PWM signals and bootstrap capacitor management, increasing control complexity but enabling high-frequency, high-voltage applications.

Cost at volume will typically favor the UM6K33NTN for simple low-power switching due to integration of two MOSFETs in a small package, reducing discrete component count. The 1EDN7116UXTSA1, as a specialized driver IC, will cost more but can reduce system losses and improve performance in power conversion applications, justifying cost in higher-end designs.

Use-case fit

Choose UM6K33NTN when…

Choose 1EDN7116UXTSA1 when…

Drop-in compatibility

The UM6K33NTN and 1EDN7116UXTSA1 are fundamentally different device types: the former is a dual MOSFET array, the latter a high-side gate driver IC. They are not pin-compatible or footprint-compatible. Substituting one for the other is not feasible without redesigning the circuit topology and PCB layout. The UM6K33NTN is designed to be a direct switch, while the 1EDN7116UXTSA1 is a driver that requires an external transistor stage.

Alternatives to consider