Component Comparison: UM6K33NTN vs 1EDN7116GXTMA1

Quick verdict

For low-current, low-voltage switching or level shifting where minimal gate drive and compact dual MOSFETs are needed, the UM6K33NTN is the better fit due to its integrated dual N-channel MOSFET array with logic-level gate drive. For high-side gate driving of discrete MOSFETs or GaN FETs requiring fast switching and high peak drive current, the 1EDN7116GXTMA1 is the clear choice as a dedicated high-side driver IC with a 2A peak output current capability.

Spec comparison table

SpecUM6K33NTN1EDN7116GXTMA1Notes
Configuration2 N-Channel MOSFET (Dual)1 High-Side Gate Driver ICDifferent device classes; UM6K33NTN is FET array, 1EDN7116GXTMA1 is a driver IC.
Continuous drain current @ 25°C200mAN/A (driver output current)UM6K33NTN max continuous load current; driver IC peak currents must be interpreted differently.
Max drain-source voltage (Vds)50 V200 V (high-side voltage max bootstrap)1EDN7116GXTMA1 handles much higher voltages on high-side bootstrap supply.
Fet featureLogic Level Gate, 1.2V DriveDrives GaN FET and N-Channel MOSFETUM6K33NTN can be driven directly from logic-level signals; 1EDN7116GXTMA1 drives external FETs.
Gate charge (Qg) max @ VgsNot specifiedNot specifiedNo data to compare.
Input capacitance (Ciss) max @ Vds25 pF @ 10VNot specifiedUM6K33NTN’s low input capacitance benefits switching speed and drive requirements.
Mounting typeSurface Mount (6-TSSOP, SC-88, SOT-363)Surface Mount (10-VFDFN Exposed Pad)Both surface mount; package size and thermal dissipation differ.
Operating temperature range (TJ)Up to 150°C-40°C to 125°CUM6K33NTN supports higher junction temperatures, useful for harsh environments.
Maximum power dissipation120 mWNot specifiedUM6K33NTN has a low power rating, indicating low current/power switching applications.
Rds(on) max @ Id, Vgs2.2 Ω @ 200mA, 4.5VN/A (driver IC)UM6K33NTN’s Rds(on) defines conduction losses; 1EDN7116GXTMA1 drives external FETs.
Device packageUMT6 (6-pin)PG-VSON-10-4 (10-pin)1EDN7116GXTMA1 requires more PCB area and routing complexity.
TechnologyMOSFET (Metal Oxide)Gate Driver IC for GaN & MOSFETsUM6K33NTN is a discrete FET array; 1EDN7116GXTMA1 is an IC driver.
Vgs(th) max @ Id1 V @ 1mANot specifiedLow threshold voltage on UM6K33NTN enables logic-level drive.
Channel typeDual N-Channel MOSFETsIndependent high-side driverUM6K33NTN channels are integrated MOSFETs; 1EDN7116GXTMA1 drives external FETs.
Peak output current (source/sink)200mA continuous (FET rating)2 A source, 2 A sink1EDN7116GXTMA1 delivers significantly higher transient drive current.
Input typeN/A (MOSFET array)Non-inverting input1EDN7116GXTMA1 logic input type relevant for control signals.
Voltage supply rangeN/A (FET array)4.2 V to 11 V1EDN7116GXTMA1 requires external supply; UM6K33NTN is passive MOSFET component.
Rise/fall time typicalNot specified3 ns rise, 3 ns fall1EDN7116GXTMA1 enables very fast switching transitions on external MOSFETs.

Design trade-offs

The UM6K33NTN is essentially a dual N-channel MOSFET array optimized for low-voltage, low-current switching loads. Its key advantage is the integration of two logic-level MOSFETs in a tiny 6-pin UMT6 package, supporting up to 50V drain-source voltage and continuous drain currents of 200mA. The relatively high Rds(on) of 2.2 Ω at 200mA and 4.5V gate drive means conduction losses are modest but not negligible, limiting this device to low-power switching or level shifting rather than power stages.

Thermally, the 120mW max power dissipation and 150°C junction temperature rating suggest the UM6K33NTN can handle intermittent or low duty-cycle operation in compact spaces without additional heatsinking. The low input capacitance (25pF) and logic-level gate threshold (1V) ease driving from microcontrollers or low-voltage logic without dedicated gate drivers or level shifters.

In contrast, the 1EDN7116GXTMA1 is a dedicated high-side gate driver IC designed for driving external N-channel MOSFETs or GaN FETs with high peak output currents (2A source and sink), enabling fast switching transitions (3ns rise/fall times typical). It supports bootstrap voltages up to 200V, making it suitable for high-voltage power conversion topologies such as synchronous buck or half-bridge converters.

From a layout standpoint, the 1EDN7116GXTMA1’s 10-pin PG-VSON package with exposed pad demands careful PCB thermal and grounding design to handle switching currents and minimize EMI. The driver IC requires a supply voltage between 4.2V and 11V and additional bootstrap components, increasing BOM and design complexity compared to the passive MOSFET array.

Cost-wise, the UM6K33NTN is likely cheaper per unit and simpler to integrate, as it requires no external driver circuitry. The 1EDN7116GXTMA1, being an active IC with complex internal circuitry, will cost more and necessitate additional components, but enables much higher switching speeds and power levels.

Firmware implications also differ: UM6K33NTN needs no dedicated driver code beyond basic logic control, while 1EDN7116GXTMA1 requires careful timing and possibly dead-time control to avoid shoot-through in half-bridge configurations.

Use-case fit

Choose UM6K33NTN when…

Choose 1EDN7116GXTMA1 when…

Drop-in compatibility

These two devices are not drop-in replacements for each other. The UM6K33NTN is a dual MOSFET array with only six pins in a UMT6 package, while the 1EDN7116GXTMA1 is a 10-pin gate driver IC in a PG-VSON package. They have fundamentally different functions (passive MOSFET switches vs. active gate driver IC), pinouts, and application circuits. Substituting one for the other would require a complete redesign of the drive circuitry and PCB layout.

Alternatives to consider