UM6K33NTN vs 1EDN6550BXTSA1 Component Comparison
Quick verdict
For low-current switching and simple load switching up to 200mA at 50V, the UM6K33NTN offers a compact, integrated dual N-channel MOSFET solution with logic-level drive, suitable for signal-level or low-power load switching. In contrast, the 1EDN6550BXTSA1 excels as a high-current gate driver IC designed to drive discrete MOSFETs or GaN FETs with peak source/sink currents above 5A, making it the better choice for high-speed, high-power MOSFET gate driving in half-bridge or synchronous rectifier applications.
Spec comparison table
| Spec | UM6K33NTN | 1EDN6550BXTSA1 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual MOSFET) | Single gate driver channel | UM6K33NTN integrates FETs; 1EDN6550BXTSA1 is a driver IC for external FETs. |
| Continuous Drain Current (Id @ 25°C) | 200 mA | N/A (driver only) | UM6K33NTN limited to 200mA load current; 1EDN6550BXTSA1 drives MOSFET gates, not load. |
| Drain-Source Voltage Max (Vds) | 50 V | N/A (driver IC, bootstrap to 200 V) | UM6K33NTN limited to 50 V; 1EDN6550BXTSA1 supports bootstrap voltage up to 200 V. |
| FET Feature | Logic Level Gate, 1.2V drive | Supports GaN FET and N-Channel MOSFET | UM6K33NTN optimized for low-voltage logic drive; 1EDN6550BXTSA1 drives high-speed gates. |
| Gate Charge (Qg) Max | Not specified | Not specified | No direct comparison possible. |
| Input Capacitance (Ciss) @ Vds | 25 pF @ 10 V | N/A | UM6K33NTN input capacitance is very low, minimizing input drive current. |
| Mounting Type | Surface Mount | Surface Mount | Both are SMT packages for compact PCB integration. |
| Operating Temperature Range (TJ) | Up to 150°C | -40°C to 150°C | Both rated to 150°C max junction temperature; 1EDN6550BXTSA1 supports wider lower range. |
| Package Case | 6-TSSOP, SC-88, SOT-363 | SOT-23-6 | UM6K33NTN slightly larger package; 1EDN6550BXTSA1 smaller footprint. |
| Power Max | 120 mW | N/A (driver IC) | UM6K33NTN max dissipation is 120 mW; 1EDN6550BXTSA1 power depends on load and switching. |
| Rds(on) Max @ Id, Vgs | 2.2 Ω @ 200 mA, 4.5 V | N/A (driver IC) | UM6K33NTN has relatively high Rds(on), limiting conduction efficiency at higher current. |
| Supplier Device Package | UMT6 | PG-SOT23-6-3 | Different package types, affecting PCB layout and thermal performance. |
| Technology | MOSFET (Metal Oxide) | GaN FET, MOSFET (N-Channel) driver | UM6K33NTN is MOSFET array; 1EDN6550BXTSA1 drives GaN or MOSFET devices externally. |
| Vgs Threshold Max | 1 V @ 1 mA | N/A | UM6K33NTN has low threshold voltage for logic-level operation. |
| Channel Type | Dual N-Channel MOSFET | Single driver channel | UM6K33NTN integrates MOSFETs; 1EDN6550BXTSA1 is driver only. |
| Peak Output Source Current | N/A | 5.2 A | 1EDN6550BXTSA1 can source high peak currents to rapidly charge MOSFET gates. |
| Peak Output Sink Current | N/A | 9.4 A | 1EDN6550BXTSA1 can sink large currents for fast gate discharge. |
| Driven Configuration | N/A | High-Side, Low-Side | 1EDN6550BXTSA1 supports half-bridge configurations natively. |
| Input Type | N/A | Inverting, Non-Inverting | 1EDN6550BXTSA1 supports flexible input logic. |
| Logic Voltage (Vil, Vih) | N/A | Not specified | 1EDN6550BXTSA1 datasheet does not specify logic input thresholds explicitly. |
| Rise/Fall Time (typical) | N/A | 1 ns, 1 ns | 1EDN6550BXTSA1 provides extremely fast switching edges. |
| Voltage Supply | N/A | 4.5 V to 20 V | 1EDN6550BXTSA1 supports wide supply voltage range. |
Design trade-offs
The UM6K33NTN is a dual N-channel MOSFET array optimized for low-current loads up to 200mA, with a maximum Vds rating of 50 V and logic-level gate drive threshold of about 1 V. Its Rds(on) at 2.2 Ω at 200mA and 4.5 V gate drive indicates it is intended for signal-level switching or small loads rather than power switching. The low input capacitance (25pF) and logic-level threshold simplify direct MCU or logic IC driving without external gate drivers, reducing BOM complexity and cost. However, the relatively high Rds(on) and low current rating limit its use to low-power switching applications.
The 1EDN6550BXTSA1 is a dedicated high-side/low-side gate driver IC capable of sourcing peak currents over 5A and sinking nearly 10A, designed to drive discrete N-channel MOSFETs or GaN FETs in half-bridge configurations. This driver supports bootstrap voltages up to 200 V, enabling operation with high-voltage power MOSFETs. The extremely fast rise and fall times (~1 ns) allow for high-frequency switching with minimized switching losses, improving efficiency in power conversion applications. The device supports both inverting and non-inverting inputs, offering flexibility in control signal logic. Its supply voltage range of 4.5 V to 20 V accommodates a wide range of power architectures.
From a layout perspective, the UM6K33NTN’s small dual MOSFET package (UMT6) simplifies board design by integrating two switches in one footprint but requires careful thermal management given the 120 mW max power dissipation and relatively high Rds(on). The 1EDN6550BXTSA1’s compact SOT-23-6 package is easy to place near the MOSFET gates it drives, but the overall solution requires external MOSFETs and attention to gate drive loop inductance and bootstrap capacitor placement to maintain switching speed and reduce EMI.
Cost-wise, the UM6K33NTN integrates MOSFETs and can reduce component count and assembly cost for low-current switching circuits. The 1EDN6550BXTSA1 adds BOM cost due to requiring external power MOSFETs but is essential for driving high-current, high-speed switching devices efficiently.
Thermally, the UM6K33NTN’s 120 mW power dissipation limit and Rds(on) constrain its use to low-power loads; the 1EDN6550BXTSA1’s power dissipation depends mainly on gate switching losses and supply current but can handle driving large MOSFET gates without thermal derating in typical applications.
Use-case fit
Choose UM6K33NTN when…
- You need to switch low-current loads (≤ 200mA) directly from a logic-level input without an external driver.
- Your application voltage is below 50 V, and compact dual-switch integration reduces PCB area and component count.
- You want a low input capacitance MOSFET array for minimal input drive current from a microcontroller or sensor interface.
- You require a simple, cost-effective solution for signal-level switching or load switching in portable or space-constrained devices.
- Your switching frequency is low, and the relatively high Rds(on) does not significantly impact efficiency.
Choose 1EDN6550BXTSA1 when…
- You are designing a half-bridge or synchronous rectifier stage requiring high peak gate drive currents (>5A) for fast switching.
- Your power MOSFETs or GaN FETs require bootstrap voltages up to 200 V for high-voltage power conversion.
- Minimizing switching losses and EMI through rapid gate transitions is critical for overall efficiency and thermal management.
- You need flexible input logic with inverting and non-inverting control signals in your gate driver IC.
- Your supply voltage varies between 4.5 V and 20 V, and you require a robust driver IC to handle