Component Comparison: Toshiba SSM6L56FE,LM vs Nexperia 2N7002BKS,115
Quick verdict
For low-voltage, moderate-current switching with mixed N- and P-channel MOSFETs in a very compact footprint, the SSM6L56FE,LM is the better choice due to its lower R_DS(on), logic-level gate drive, and complementary pair. For higher-voltage, low-current switching, especially where automotive qualification and robustness are required, the 2N7002BKS,115 wins thanks to its 60 V rating, AEC-Q101 qualification, and higher power dissipation capability.
Spec comparison table
| Spec | SSM6L56FE,LM | 2N7002BKS,115 | Notes |
|---|---|---|---|
| Configuration | N and P-Channel | 2 N-Channel (Dual) | SSM6L56FE,LM offers complementary N/P pairs, useful for half-bridge or push-pull stages. |
| Drain-Source Voltage (V_DS max) | 20 V | 60 V | 2N7002BKS,115 supports 3x higher voltage, suitable for higher-voltage rails. |
| Continuous Drain Current (I_D @ 25°C) | 800 mA | 300 mA | SSM6L56FE,LM supports higher continuous current (2.7x), better for moderate loads. |
| Power Dissipation (P_D max @ Ta) | 150 mW | 295 mW | 2N7002BKS,115 can dissipate nearly double power, beneficial for thermal headroom. |
| Gate Drive Voltage (Logic Level) | 1.5 V Drive | Logic Level (typical) | SSM6L56FE,LM specified for 1.5 V drive; 2N7002BKS gate threshold is higher, less ideal for very low V_GS logic. |
| Gate Charge (Q_G max) | 1 nC @ 10 V | 0.6 nC @ 4.5 V | 2N7002BKS,115 has lower gate charge at lower voltage; better for fast switching at lower V_GS. |
| Input Capacitance (C_iss max) | 55 pF (N), 100 pF (P) @ 10 V | 50 pF @ 10 V | Comparable input capacitance; SSM6L56FE,LM P-channel has higher capacitance, affecting switching speed. |
| R_DS(on) max | 235 mΩ @ 800 mA, 4.5 V (N) | 1.6 Ω @ 500 mA, 10 V (N) | SSM6L56FE,LM has much lower on-resistance (~7x lower), reducing conduction losses significantly. |
| Gate Threshold Voltage (V_GS(th)) | 1 V @ 1 mA | 1.6 V typical, 2.1 V max @ 250 µA | SSM6L56FE,LM turns on at lower gate voltage, better for low-voltage logic interfaces. |
| Package | SOT-563, SOT-666 (ES6) | 6-TSSOP, SOT-363 | 2N7002BKS,115 in a larger 6-pin package; SSM6L56FE,LM is smaller, better for dense layouts. |
| Operating Temperature Range | up to 150 °C | -55 °C to 150 °C | 2N7002BKS,115 supports wider ambient range, including automotive-grade cold temps. |
| Power Dissipation (typ) | 150 mW | 295 mW | 2N7002BKS,115 offers higher typical power dissipation, aiding thermal margin. |
| Drain Current Peak | Not specified | 1.2 A | 2N7002BKS,115 can handle short surge currents 4x its continuous rating. |
| ESD Rating | Not specified | 2 kV | 2N7002BKS,115 includes explicit ESD rating, reassuring for automotive/industrial environments. |
| Thermal Resistance (per transistor) | Not specified | 370 K/W (typ) | Only 2N7002BKS,115 thermal resistance data available; high K/W indicates limited heat conduction. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Both are MOSFETs; no difference here. |
Design trade-offs
The most striking difference is voltage rating and current capability. The SSM6L56FE,LM is optimized for low-voltage (20 V max), moderate-current (800 mA) applications with both N- and P-channel MOSFETs in one tiny package. This makes it ideal for low-voltage DC-DC converters or load switches where complementary MOSFETs simplify design. Its low R_DS(on) (235 mΩ at 4.5 V gate drive) translates to significantly lower conduction losses compared to the 2N7002BKS,115, which has a typical R_DS(on) near 1.6 Ω at 10 V gate drive. This also means the SSM6L56FE,LM will dissipate less heat under similar load conditions, easing thermal design and improving efficiency.
The 2N7002BKS,115, on the other hand, supports up to 60 V, enabling use on higher voltage rails and making it suitable for automotive and industrial applications. It is AEC-Q101 qualified and rated for a wider ambient temperature range (-55 °C to 150 °C), important for harsh environments. While its continuous current rating is lower (300 mA), it supports a 1.2 A peak, making it robust for transient loads. It also has a higher maximum power dissipation (295 mW), which provides more thermal margin despite its higher R_DS(on).
Gate drive requirements differ as well. The SSM6L56FE,LM is designed for logic-level gate drive starting at 1.5 V with a low threshold voltage (~1 V), which is beneficial in low-voltage digital control systems. The 2N7002BKS,115 has a higher gate threshold voltage (~1.6 V typical, max 2.1 V), meaning it requires a stronger gate signal for full enhancement. However, its gate charge at 4.5 V (0.6 nC) is lower than the SSM6L56FE,LM’s 1 nC at 10 V, which could allow for faster switching at moderate gate voltages, albeit with higher conduction losses.
From a layout standpoint, the SSM6L56FE,LM’s SOT-563 / SOT-666 (ES6) package is smaller than the 6-TSSOP of the 2N7002BKS,115, enabling tighter PCB real estate usage. This is important in dense, space-constrained designs. However, the smaller package also means more careful thermal management is required to prevent overheating, given the lower maximum power dissipation.
Cost considerations are not explicitly provided but can be inferred: the 2N7002BKS,115 is automotive qualified and newer (released Oct 2024), which may increase cost compared to the more generic SSM6L56FE,LM. The dual N-channel configuration of 2N7002BKS,115 also limits its flexibility compared to the complementary pair in SSM6L56FE,LM.
Use-case fit
Choose SSM6L56FE,LM when…
- Designing low-voltage (≤20 V) load switches or level shifters requiring both N- and P-channel MOSFETs in a single package.
- Efficiency and low conduction losses are critical under moderate continuous currents up to 800 mA.
- Gate drive voltage is limited to 1.5–4.5 V, such as in battery-powered or low-voltage logic-controlled circuits.
- PCB space is constrained and a very small surface-mount package is required.
- Operating environment does not demand automotive qualification or extended temperature ranges below 0 °C.
Choose 2N7002BKS,115 when…
- Switching voltages up to 60 V are needed, including automotive and industrial 12 V or 24 V rails with voltage transients.
- The design requires AEC-Q101 qualification for automotive or harsh environment applications.
- Continuous current is moderate (up to 300 mA), but transient current capability up to 1.2 A is needed.
- Higher power dissipation (up to 295 mW) provides better thermal headroom in less space-constrained layouts.
- Gate drive voltages are 4.5 V or higher and slightly higher gate threshold voltage is acceptable.
Drop-in compatibility
These parts are not pin- or footprint-compatible. The SSM6L56FE,LM comes in a very small SOT-563 / SOT-666 (ES6) package with complementary N- and P-channel MOSFETs typically designed for dual-channel complementary switching. The 2N7002BKS,115 is housed in a larger 6-TSSOP package with two N-channel MOSFETs only.
Pinouts, gate drive requirements, and electrical characteristics differ significantly. Substituting one for the other would require schematic and PCB redesign, and likely firmware or gate drive adjustments due to