SQ1922AEEH-T1_GE3 vs SQ1922EEH-T1_GE3 MOSFET Array Comparison
Quick verdict
For low-voltage dual N-channel MOSFET applications requiring slightly better conduction efficiency and lower gate threshold, the SQ1922EEH-T1_GE3 is preferable due to its lower R_DS(on) at 25°C (0.350 Ω vs 0.49 Ω) and lower gate threshold voltage (typ 1 V vs 2 V). However, if your design demands higher junction temperature rating (175°C vs 150°C) and slightly higher continuous drain current rating (850mA vs 840mA) with a more robust thermal profile, the SQ1922AEEH-T1_GE3 is the better choice.
Spec comparison table
| Spec | SQ1922AEEH-T1_GE3 | SQ1922EEH-T1_GE3 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Equivalent |
| Maximum Drain-Source Voltage (V_DS) | 20 V | 20 V | Equivalent |
| Continuous Drain Current (T_c) | 0.85 A (min), 0.53 A (typ) | 0.84 A (typ) | Marginally higher rating on SQ1922AEEH |
| Drain Current (I_D) Min / Typ | 1 A (min), 1.2 A (typ) | 1.2 A (min), 1 A (typ) | SQ1922EEH has higher min I_D (1.2 A) but lower typical (1 A) |
| Drain-Source On-Resistance (R_DS(on)) Typ @ 25°C | 0.490 Ω | 0.350 Ω | SQ1922EEH has significantly lower R_DS(on), better conduction efficiency |
| R_DS(on) Max @ 400mA, 4.5 V | 300 mΩ | 350 mΩ | SQ1922AEEH better here; datasheet values conflict with typical R_DS(on) |
| Gate Threshold Voltage (V_GS(th)) Min/Max/Typ | 1.5 V / 2.5 V / 2 V | 0.5 V / 1.5 V / 1 V | SQ1922EEH has a lower gate threshold, easier to drive at low gate voltages |
| Gate Charge (Q_g) @ 4.5 V | 1.2 nC (max), 2.1 nC (typ) | 1.2 nC (max), typ not explicitly given | Comparable, but SQ1922AEEH lists typical as 2.1 nC, slightly higher gate charge |
| Input Capacitance (C_iss) @ 10 V | 60 pF | 50 pF | SQ1922EEH has lower input capacitance, beneficial for switching speed |
| Forward Voltage of Body Diode (V_F) Typ | 1.2 V | 1.2 V | Equivalent |
| Maximum Junction Temperature (T_J) | 175 °C | 150 °C | SQ1922AEEH supports higher TJ, better for high-temp environments |
| Operating Temperature Range | -55 °C to 175 °C | -50 °C to 150 °C | SQ1922AEEH has wider operating temperature range |
| Maximum Power Dissipation (T_c) | 1.5 W | 1.5 W | Equivalent |
| Package Type | SC-70 6-Pin | SC-70 6-Pin | Equivalent |
| Gate Resistance (R_G) Typ / Max | 8.5 Ω (typ), 13.5 Ω (max) | 4.5 Ω (min), 13.7 Ω (max), typ ~9 Ω | SQ1922EEH typically has lower gate resistance, better for faster switching |
| Reverse Transfer Capacitance (C_rss) Typ | 15 pF | 10 pF | SQ1922EEH has lower C_rss, reduces Miller effect, beneficial for switching |
| Rise Time / Fall Time (typ) | 15 ns / 10 ns | 15 ns / 10 ns | Equivalent |
| Pulsed Drain Current Max | 3.3 A | 3 A | SQ1922AEEH has slightly higher pulsed current rating |
| Junction-to-Ambient Thermal Resistance (R_θJA) Typ | 460 °C/W | 220 °C/W | SQ1922EEH has better thermal dissipation in typical conditions |
| Qualification | AEC-Q101 | AEC-Q101 | Equivalent |
Design trade-offs
The primary differentiator between the SQ1922AEEH-T1_GE3 and SQ1922EEH-T1_GE3 is conduction efficiency at room temperature, dictated by the R_DS(on) values. The SQ1922EEH offers a significantly lower typical R_DS(on) of 0.350 Ω compared to 0.490 Ω for the SQ1922AEEH. This translates directly into lower conduction losses and less heat generation for equivalent currents, making the SQ1922EEH more suitable for designs where efficiency and thermal management are critical at nominal operating conditions.
However, the SQ1922AEEH has a higher maximum junction temperature rating (175°C vs. 150°C) and a slightly higher continuous drain current rating. This gives it an edge in applications with harsh thermal environments or elevated ambient temperatures. The higher TJ max also provides added design margin when operating close to thermal limits. The SQ1922AEEH’s thermal resistance to ambient is also higher (460 °C/W vs. 220 °C/W typical), indicating it relies more heavily on improved PCB thermal design or heat sinking to maintain junction temperature.
Gate drive requirements also differ: the SQ1922EEH has a notably lower gate threshold voltage (typ 1 V vs. 2 V) and lower gate resistance (typ ~9 Ω vs. 8.5 Ω but with a lower minimum of 4.5 Ω vs 5 Ω). The lower V_GS(th) reduces the minimum gate voltage necessary to switch the transistor on, which can simplify low-voltage gate driver design and improve switching performance. The SQ1922EEH also features lower input and reverse transfer capacitances, which translates to faster switching speeds and reduced switching losses, critical in PWM-driven circuits.
On the other hand, the SQ1922AEEH shows a slightly higher maximum pulsed drain current rating (3.3 A vs. 3 A), which may support brief overload conditions better. This, combined with the higher operating temperature range and junction temperature, makes it more robust in rugged automotive or industrial applications where transient currents and temperature spikes are expected.
From a layout perspective, both parts share the same SC-70-6 package and pin count, but the SQ1922EEH’s lower thermal resistance to ambient suggests that it benefits more from good PCB thermal design (e.g., larger copper pours and thermal vias). The SQ1922AEEH, having higher thermal resistance, may require more careful thermal management or derating in tightly packed designs.
Cost at volume is not included in the source data, but given the similar package and qualification (both AEC-Q101 automotive grade), pricing differences will likely hinge on yield and manufacturing process optimizations. The SQ1922EEH’s better conduction and switching characteristics may command a slight premium in highly optimized designs.
Use-case fit
Choose SQ1922AEEH-T1_GE3 when…
- Operating environment demands a higher maximum junction temperature (up to 175°C), such as automotive under-the-hood or industrial applications with elevated ambient.
- Your application includes occasional pulsed currents up to 3.3 A, requiring slightly higher transient current capability.
- Thermal margins are tight, and you rely on robustness over peak efficiency, especially if PCB thermal design is limited.
- The design can tolerate a higher gate threshold voltage and slightly higher conduction losses for improved thermal robustness.
- You want to maximize continuous current rating (850 mA vs. 840 mA) in borderline current-limited applications.
Choose SQ1922EEH-T1_GE3 when…
- Efficiency and conduction loss reduction are critical, with R_DS(on) typ of 0.350 Ω offering ~30% lower conduction loss at 25°C compared to 0.490 Ω.
- Gate drive voltage is limited or you require a lower gate threshold voltage (typ 1 V) for compatibility with low-voltage logic or battery-powered systems.
- Switching speed and gate charge are priorities, benefiting from lower input capacitance (50 pF vs. 60 pF) and reverse transfer capacitance (10 pF vs. 15 pF).
- The application operates predominantly at or below 150°C junction temperature, such as consumer electronics or less thermally demanding automotive subsystems.
- Thermal design can leverage the lower junction-to-ambient thermal resistance (220 °C/W typical), enabling smaller PCB footprint or less copper area.
Drop-in compatibility
Both devices share the same package type (SC-70 6-pin) and pin count, and both are dual N-channel MOSFET arrays designed for similar voltage and current ranges. The datasheets do not explicitly confirm pin-to