NX3008NBKS,115 vs UJ4C075023K4S: Component Comparison for Power Electronics Designers
Quick verdict
For low-voltage, low-current applications such as signal switching or level shifting within automotive or portable electronics, the NX3008NBKS,115 is the clear choice due to its integrated dual MOSFET array, logic-level gate drive, and automotive-grade qualification. Conversely, for high-voltage, high-current power conversion tasks—like industrial motor drives or power supplies requiring 750 V blocking voltage and tens of amperes of continuous current—the UJ4C075023K4S outperforms with its SiC cascode technology, much lower R_DS(on), and significantly higher power dissipation capability.
Spec comparison table
| Spec | NX3008NBKS,115 | UJ4C075023K4S | Notes |
|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | onsemi | |
| Product type | MOSFET Array (2 x N-Channel) | N-Channel MOSFET | NX3008NBKS is a dual MOSFET array, UJ4C075023K4S is a single discrete device |
| Drain-source voltage max (V) | 30 V | 750 V | UJ4C075023K4S supports 25x higher voltage, enabling high-voltage designs |
| Continuous drain current (A) | 0.35 A | 66 A (at case temp) | UJ4C075023K4S handles nearly 200x higher current, critical for power applications |
| Pulsed drain current max (A) | 1.4 A | Not specified | NX3008NBKS supports low pulsed current, UJ4C075023K4S datasheet does not specify pulsed current |
| R_DS(on) typical @ 25°C (Ω) | 1.0 – 1.4 Ω | 0.029 Ω @ 40 A, 12 V | UJ4C075023K4S has ~35x lower R_DS(on), reducing conduction losses substantially at high current |
| Gate threshold voltage (V) | 0.5 – 1.75 V (typ 1.75 V) | 6 V @ 10mA | NX3008NBKS is logic-level gate drive compatible; UJ4C075023K4S requires higher gate drive voltage |
| Gate charge Qg (typ) | 0.52 – 0.68 nC @ 4.5 V | 37.8 nC @ 15 V | NX3008NBKS gate charge is ~50x lower; easier to drive with low-power logic |
| Input capacitance C_iss (typ) | 34 – 50 pF @ 25°C | 1400 pF @ 400 V | NX3008NBKS has much lower input capacitance, enabling faster switching with lower gate drive losses |
| Output capacitance C_oss (typ) | 6.5 pF | Not specified | Lower output capacitance in NX3008NBKS reduces switching losses |
| Reverse transfer capacitance C_rss (typ) | 2.2 pF | Not specified | NX3008NBKS has low C_rss, beneficial for reducing Miller effect and improving switching speed |
| Maximum power dissipation (W) | 0.445 W (typ), 0.99 W (max) | 306 W (at case temperature) | UJ4C075023K4S supports >600x higher power dissipation, suited for high-power designs |
| Package | 6-TSSOP (dual MOSFET) | TO-247-4 (single MOSFET) | NX3008NBKS is compact surface mount; UJ4C075023K4S is through-hole for high power dissipation |
| Operating temperature range (°C) | -55 to +150 | -55 to +175 | UJ4C075023K4S supports wider high-temperature operation |
| Gate-source voltage max (V) | ±8 V | ±20 V | UJ4C075023K4S allows higher gate voltage swings; NX3008NBKS limited to logic-level voltages |
| ESD rating (V) | 2000 V | Not specified | NX3008NBKS has specified ESD rating; UJ4C075023K4S datasheet does not specify |
| Drain leakage current (typ) @ 25°C (µA) | 1 µA | Not specified | Lower leakage current favored for low-power or precision analog circuits |
| Transient thermal impedance (typ) | 0.5 K/W (100 ms), 300 K/W (junction-to-ambient) | Not specified | NX3008NBKS data available; UJ4C075023K4S likely much better due to package and power rating |
| Technology | MOSFET (Metal Oxide) | SiCFET (Cascode SiCJFET) | UJ4C075023K4S SiC technology enables high voltage, high temp, and faster switching |
| Mounting type | Surface mount (6-TSSOP) | Through hole (TO-247-4) | NX3008NBKS suited for compact SMT designs; UJ4C075023K4S for high power, better thermal path |
| Package dimensions (typ) | 2.2 mm x 1.35 mm | TO-247-4 standard | NX3008NBKS much smaller footprint |
| Total power dissipation max (W) | 0.99 W | 306 W | UJ4C075023K4S supports significantly higher power dissipation |
| Turn-on time (typ) | 15–30 ns | Not specified | NX3008NBKS switching speed data available; UJ4C075023K4S datasheet does not specify |
| Turn-off delay time (typ) | 69–138 ns | Not specified | Same as above |
Design trade-offs
The NX3008NBKS,115 and UJ4C075023K4S serve fundamentally different roles despite both being N-channel MOSFETs. The NX3008NBKS,115 is a dual MOSFET array with a logic-level gate threshold (~1.75 V typical) and extremely low gate charge (around 0.6 nC), designed for low-voltage (30 V max) and low-current (350 mA) operation. Its small 6-TSSOP package and low input/output capacitances make it suitable for high-density PCB layouts with minimal gate drive requirements. The built-in dual transistor configuration is useful for applications requiring complementary switching or half-bridge topologies in compact form factors, common in automotive signal conditioning or load switching.
Thermal dissipation is limited to under 1 W total, with a high thermal resistance (300 K/W junction-to-ambient typical), meaning the NX3008NBKS must be used in low-power scenarios or with effective thermal management on the PCB. The device is qualified for automotive AEC-Q101 standards, ensuring reliability in harsh environments.
In contrast, the UJ4C075023K4S is a single discrete device using SiC cascode technology optimized for high-voltage (750 V) and high-current (66 A continuous at case temperature) power applications. Its R_DS(on) of 29 mΩ at 40 A and 12 V gate drive is orders of magnitude lower than the NX3008NBKS, translating directly to much lower conduction losses in power stages. The SiC technology also allows operation at higher temperatures (up to 175 °C junction) and higher power dissipation (306 W at case), with a robust TO-247-4 through-hole package that facilitates heat sinking.
The UJ4C075023K4S requires a higher gate drive voltage (12 to 15 V recommended) and has a significantly higher gate charge (37.8 nC at 15 V), which demands a stronger gate driver and careful gate drive layout to avoid switching losses and ringing. Its larger input capacitance (1.4 nF) also impacts switching speed and requires consideration in high-frequency designs.
Cost-wise, the NX3008NBKS,115 will be lower priced and simpler to implement due to its integration and SMT package, making it economical for volume low-power designs. The UJ4C075023K4S is more expensive and requires more complex thermal and gate drive design, but is essential for high-power, high-voltage circuits where silicon MOSFETs fall short.
Use-case fit
Choose NX3008NBKS,115 when…
- Designing automotive or industrial control boards needing integrated dual low-voltage switches with logic-level gate inputs for signal multiplexing or low-side load switching.
- Implementing compact, low-current half-bridge drivers or level shifters where PCB area and gate drive power are constrained.
- Operating in environments requiring AEC-Q101 qualification for reliability under automotive temperature and stress conditions.
- Switching small loads or providing power gating in portable or battery-powered devices where conduction losses and quiescent leakage must be minimal.
- Working with limited gate drive voltage (3–5 V logic levels) in microcontroller or FPGA interfacing.