Component Comparison: NX3008NBKS,115 vs UJ3C120080K3S
Quick verdict
For low-voltage, low-current applications requiring compact dual MOSFETs with automotive-grade qualification, the NX3008NBKS,115 is the clear winner due to its small footprint, logic-level gate, and AEC-Q101 certification. Conversely, for high-voltage, high-current power switching—especially in industrial or power conversion systems—the UJ3C120080K3S excels with its 1200 V rating, 33 A continuous current capability, and significantly higher power dissipation, albeit with a much larger footprint and more demanding gate drive requirements.
Spec comparison table
| Spec | NX3008NBKS,115 | UJ3C120080K3S | Notes |
|---|---|---|---|
| Product URL | Link | Link | |
| Technology | MOSFET (Metal Oxide) | SiCFET (Cascode SiCJFET) | SiC device offers higher voltage, faster switching, and better thermal performance |
| Configuration | 2 N-Channel (Dual) | Single N-Channel | Dual MOSFET in one package vs. single device |
| Drain-Source Voltage (V) | 30 V | 1200 V | UJ3C120080K3S supports 40x higher voltage, critical for high-voltage applications |
| Continuous Drain Current (Id) @ 25°C | 350 mA | 33 A (Tc) | UJ3C120080K3S supports nearly 100x higher current |
| Pulsed Drain Current (Id,spiking) | 1.4 A | Not specified | NX3008NBKS,115 limited to small transient currents |
| On-Resistance Rds(on) @ Id, Vgs | 1.4 Ω @ 350mA, 4.5 V | 100 mΩ @ 20 A, 12 V | UJ3C120080K3S has much lower conduction losses at high current |
| Gate Threshold Voltage (Vgs_th) | 0.6–1.1 V (typ 0.9 V) | 6 V @ 10 mA | NX3008NBKS,115 is logic-level gate, easier to drive with low-voltage logic |
| Gate Charge Qg @ Vgs | 0.68 nC @ 4.5 V (typ) | 51 nC @ 15 V | NX3008NBKS,115 requires much less gate drive energy, suitable for low-power drivers |
| Input Capacitance Ciss | 50 pF @ 15 V | 1500 pF @ 100 V | NX3008NBKS,115 has significantly lower input capacitance, faster switching at low voltage |
| Output Capacitance | 6.5 pF (typ) | Not specified | Lower output capacitance helps reduce switching losses |
| Reverse Transfer Capacitance Crss | 2.2 pF (typ) | Not specified | Lower Crss reduces Miller effect, improving switching performance |
| Maximum Power Dissipation | 445 mW (typ), 990 mW (max) | 254.2 W (Tc) | UJ3C120080K3S can dissipate orders of magnitude more power |
| Operating Temperature Range | -55°C to +150°C (TJ) | -55°C to +175°C (TJ) | UJ3C120080K3S supports higher max junction temperature |
| Package | 6-TSSOP (Surface Mount) | TO-247-3 (Through Hole) | NX3008NBKS,115 is small surface mount; UJ3C120080K3S is large through-hole |
| Mounting Type | Surface Mount | Through Hole | Surface mount for compact designs; through hole for high power dissipation |
| Electrostatic Discharge Rating | 2000 V | Not specified | NX3008NBKS,115 has known ESD rating |
| Gate-Source Voltage Max | ±8 V | ±25 V | UJ3C120080K3S supports higher gate voltage swings, but requires higher gate drive voltage |
| Transient Thermal Impedance (typical) | 0.01 to 1 K/W (varies with time scale) | Not specified | NX3008NBKS,115 data available; UJ3C120080K3S likely much lower but not specified |
| Total Power Dissipation (typical) | 280 mW | Not specified | NX3008NBKS,115 is low power device |
| Gate Leakage Current (typ) | 0.2–1 µA | Not specified | NX3008NBKS,115 has low gate leakage current |
| Qualification | AEC-Q101 Automotive Grade | None specified | NX3008NBKS,115 suitable for automotive applications |
Design trade-offs
The most fundamental design trade-off between the NX3008NBKS,115 and the UJ3C120080K3S is their vastly different application domains. The NX3008NBKS,115 is a small dual N-channel MOSFET array optimized for low-voltage (30 V), low-current (350 mA) applications with a logic-level gate threshold (~0.9 V typical). This makes it suitable for signal-level switching, load switching, or low power DC-DC conversion where space and gate drive simplicity are key. Its very low gate charge (~0.68 nC at 4.5 V) and low input capacitance (50 pF) translate into minimal switching losses and allow direct drive from low-voltage logic, simplifying gate driver design and reducing BOM.
In contrast, the UJ3C120080K3S is a high-voltage (1200 V), high-current (33 A) SiC cascode device designed for power electronics applications such as motor drives, inverters, or power supplies requiring high blocking voltage and high continuous current capability. The SiCFET technology results in lower conduction losses at high current (100 mΩ at 20 A) compared to silicon MOSFETs, but it demands a robust gate drive voltage of 12 V and a high gate charge (51 nC at 15 V), which impacts gate driver complexity, switching speed, and system power loss. Its TO-247 package and through-hole mounting support effective heat sinking, necessary for dissipating up to 254 W, whereas the NX3008NBKS,115’s tiny 6-TSSOP package cannot handle anywhere near that power.
Thermal considerations are critical. The NX3008NBKS,115 has a high thermal resistance (~300 K/W typical per device) and is limited to less than 1 W dissipation, suitable only for low power switching or signal-level loads. The UJ3C120080K3S’s large package and lower on-resistance allow continuous operation at tens of amps with appropriate heatsinking. This means the latter requires a well-engineered thermal management solution, including heatsinks or forced air, and careful PCB layout to minimize thermal resistance paths.
From a layout perspective, the NX3008NBKS,115’s small surface mount package supports compact, high-density boards but requires careful attention to thermal vias and copper area to maximize heat dissipation. The UJ3C120080K3S’s through-hole package is physically larger but easier to mount on heat sinks and supports higher power dissipation. Gate drive requirements differ substantially: the NX3008NBKS,115 can be driven directly from 3.3–5 V logic with minimal drive current, while the UJ3C120080K3S needs a dedicated 12–15 V gate driver capable of sourcing tens of milliamps quickly to manage switching losses and avoid device stress.
Cost at volume will reflect these differences: the NX3008NBKS,115 is a compact dual MOSFET array likely priced in the low cents range, optimized for cost-sensitive consumer or automotive applications. The UJ3C120080K3S’s SiC technology and high power rating will command a significantly higher price, justified only in demanding high-voltage, high-current applications.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a compact dual N-channel MOSFET array for low-voltage (≤30 V), low-current (≤350 mA) load switching or level shifting.
- Gate drive voltage is limited to 3.3–5 V logic levels without dedicated gate drivers.
- Automotive-grade qualification (AEC-Q101) is required for reliability in harsh environments.
- Board space is at a premium and surface-mount assembly is mandatory.
- Power dissipation is low (<1 W), such as signal multiplexing, small relay replacement, or low-current load drivers.
Choose UJ3C120080K3S when…
- Your application requires blocking voltages up to 1200 V, such as in industrial motor drives, high-voltage DC-DC converters, or inverters.
- Continuous currents of tens of amps (up to 33 A) are expected.