Component Comparison: NX3008NBKS,115 vs UF3C170400B7S
Quick verdict
For low-voltage, low-current switching or level-shifting applications, the NX3008NBKS,115 offers a compact dual MOSFET with logic-level gates and excellent low-current leakage suitable for automotive-grade designs. In contrast, for high-voltage, high-power switching where 1700 V blocking and several amps of conduction current are required, the UF3C170400B7S’s SiCFET technology and robust package make it the better choice despite higher gate drive requirements.
Spec comparison table
| Spec | NX3008NBKS,115 | UF3C170400B7S | Notes |
|---|---|---|---|
| Current continuous drain Id @ 25°C | 350 mA | 7.6 A (Tc) | UF3C170400B7S supports >20x higher continuous current, suitable for power stages. |
| Drain-Source Voltage Max (Vds max) | 30 V | 1700 V | UF3C170400B7S handles very high voltage, NX3008NBKS limited to low-voltage logic-level use. |
| Total Power Dissipation Max | 990 mW | 100 W (Tc) | UF3C170400B7S dissipates 100x more power, suited for heavy power applications. |
| Package Case | 6-TSSOP, SC-88, SOT-363 | D2PAK-7 (TO-263-8) | NX3008NBKS smaller footprint; UF3C170400B7S larger, better thermal handling. |
| Gate Charge Qg max @ Vgs | 0.68 nC @ 4.5 V | 23.1 nC @ 15 V | NX3008NBKS has significantly lower gate charge, easier and faster to drive. |
| Gate-Source Voltage Max | ±8 V | ±25 V | UF3C170400B7S tolerates higher gate voltages, but requires higher drive voltage. |
| Gate-Source Threshold Voltage (Vgs_th) | Typ: 1.75 V; Max: 1.1 V @ 250 µA (datasheet inconsistent, refer to max) | 6 V @ 10 mA | NX3008NBKS is logic-level compatible; UF3C170400B7S needs higher gate voltage to turn on. |
| Input Capacitance (Ciss) | 50 pF @ 15 V | 734 pF @ 1200 V | NX3008NBKS has much lower input capacitance, enabling faster switching at low voltages. |
| Rds(on) Typ @ 25°C | 1.0 – 1.4 Ω @ 350 mA, 4.5 V | 515 mΩ @ 5 A, 12 V | UF3C170400B7S has much lower on-resistance at its rated current, better conduction losses. |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS can handle brief current spikes 4x its continuous rating; UF3C170400B7S data missing. |
| Operating Temperature Range (TJ) | -55°C to 150°C | -55°C to 175°C | UF3C170400B7S supports higher max junction temperature, useful for harsh environments. |
| Electrostatic Discharge Max Rating | 2000 V | Not specified | NX3008NBKS has ESD rating, important for handling during assembly. |
| Technology | MOSFET (Metal Oxide) | SiCFET (Cascode SiCJFET) | UF3C170400B7S uses SiC cascode FET tech for high voltage and temperature. |
| Thermal Resistance Junction to Ambient | 300 K/W per device | Not specified | NX3008NBKS has poor thermal resistance due to small package; UF3C170400B7S likely better. |
| Transient Thermal Impedance | 0.01 to 1 K/W (various timescales) | Not specified | NX3008NBKS datasheet provides detailed transient thermal data; UF3C170400B7S does not. |
| Configuration | Dual N-channel MOSFET | Single N-channel MOSFET | NX3008NBKS integrates two MOSFETs, useful for load switching or complementary stages. |
| Mounting Type | Surface Mount (6-TSSOP) | Surface Mount (D2PAK-7) | Different packages; D2PAK better for thermal dissipation, TSSOP for compact boards. |
| Power Max | 445 mW | 100 W | UF3C170400B7S is designed for power conversion or motor drive; NX3008NBKS for signal-level. |
Design trade-offs
The NX3008NBKS,115 is a dual N-channel MOSFET array optimized for low-voltage, low-current applications. Its logic-level gate threshold (~1.75 V typical) and low gate charge (~0.68 nC @ 4.5 V) enable direct drive from low-voltage logic or microcontrollers without additional gate drivers. The small 6-TSSOP package saves PCB space but limits power dissipation to under 1 W and has relatively high Rds(on) (~1.0–1.4 Ω at 350 mA). Thermal management is minimal; the junction-to-ambient thermal resistance is ~300 K/W, meaning even small power dissipation causes significant temperature rise. This part fits well in signal switching, low-side load switches, and level shifting in automotive-grade environments with wide temperature range (-55°C to +150°C) and AEC-Q101 qualification.
Conversely, the UF3C170400B7S is a single N-channel cascode SiC FET designed for high-voltage, high-current power applications. Its 1700 V rating and 7.6 A continuous current make it suitable for industrial power supplies, motor drives, and power factor correction circuits. The Rds(on) at rated current (515 mΩ @ 5 A) is low, minimizing conduction losses at high load currents. However, it requires a higher gate drive voltage (up to ±25 V max; typical gate threshold ~6 V), necessitating dedicated gate drivers and level-shifting circuits. The gate charge is much higher (23.1 nC @ 15 V), which increases switching losses and demands robust gate drive capability. The D2PAK-7 package supports better thermal dissipation, with a maximum power rating of 100 W at case temperature, but the larger footprint and thermal pad requirements increase PCB area and complexity.
Switching speed and efficiency considerations also diverge: NX3008NBKS,115’s low capacitances (50 pF input) and low gate charge allow fast switching with minimal driver power, but its higher Rds(on) limits efficiency at higher currents. UF3C170400B7S’s higher input capacitance (734 pF) and gate charge increase switching losses, but its low Rds(on) at high currents improves overall efficiency in power stages. Thermal design in UF3C170400B7S applications must focus on heat sinking and PCB thermal relief to utilize its full power rating and prevent thermal runaway.
Cost-wise, NX3008NBKS,115 is likely cheaper and available in smaller, high-volume packages suited for signal-level switching, while UF3C170400B7S is a specialized, more expensive component targeting power applications requiring high voltage and current capability.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a compact dual MOSFET array to switch loads up to 350 mA at logic-level gate drive (e.g., low-side load switches, LED drivers).
- Operating voltage stays below 30 V, such as in automotive sensor interface or battery management auxiliary circuits.
- The design requires automotive-grade qualification (AEC-Q101) and operation up to 150°C junction temperature.
- PCB space is limited and low power dissipation (<1 W) is acceptable.
- You require fast switching with minimal gate drive power from a low-voltage microcontroller or logic device.
Choose UF3C170400B7S when…
- Your application demands blocking voltages above 1000 V, such as industrial motor drives, power factor correction, or high-voltage DC-DC converters.
- Continuous conduction currents in the multi-ampere range (up to 7.6 A) are expected.
- You have a gate driver capable of delivering 12–15 V gate drive with sufficient current to handle the 23.1 nC gate charge.
- Thermal management infrastructure (heatsinks, thermal vias) can be implemented to dissipate up to 100 W.
- You need operation at higher junction temperatures (up to 175°C) and can tolerate larger PCB footprint and cost.
Drop-in compatibility
These parts are not pin-compatible or footprint-compatible. NX3008NBKS,115 is a dual MOSFET in a small 6-TSSOP package with a 2.2 mm length and 1.35 mm width, while UF3C170400B7S is a