Component Comparison: NX3008NBKS,115 vs TB67B008FTG,EL
Quick verdict
For low-voltage, low-current switching or signal-level applications requiring dual N-channel MOSFETs with minimal footprint and high operating temperature, the NX3008NBKS,115 is the better choice due to its automotive-grade qualification, low gate charge, and tight temperature range (-55°C to +150°C). Conversely, for integrated motor driver applications demanding up to 3A continuous current and built-in PWM control, the TB67B008FTG,EL offers a compact, fully integrated half-bridge power stage optimized for brushless DC motors within a standard industrial temperature range (-40°C to 105°C).
Spec comparison table
| Spec | NX3008NBKS,115 | TB67B008FTG,EL | Notes |
|---|---|---|---|
| Product type | MOSFET Array (2x N-Channel) | Motor Driver Power MOSFET (Integrated driver + power stage) | TB67B008FTG,EL is a fully integrated driver with MOSFETs, NX3008NBKS is discrete MOSFETs. |
| Voltage rating (Drain-Source) | 30 V | 5.5 V to 22 V | NX3008NBKS supports higher voltage, more headroom for 24 V systems. |
| Continuous current | 350 mA | 3 A | TB67B008FTG,EL supports nearly 10x higher continuous current. |
| Max power dissipation | 445 mW (device), 990 mW (total) | Not specified in source data | NX3008NBKS max power dissipation is documented; TB67B008FTG,EL data not given. |
| Package | 6-TSSOP (2.2 mm x 1.35 mm) | 24-WQFN (4 mm x 4 mm) | NX3008NBKS is much smaller, beneficial for dense PCB layouts. |
| Operating temperature range | -55°C to +150°C (junction) | -40°C to +105°C (ambient) | NX3008NBKS suits automotive/extreme environments; TB67B008FTG,EL limited to industrial range. |
| Gate charge (typical @ 4.5 V) | 0.68 nC | Not specified | NX3008NBKS has very low gate charge, reducing switching losses and gate drive power. |
| Gate threshold voltage (typ) | 0.6 to 1.1 V | Not specified | NX3008NBKS logic-level gate threshold suitable for 3.3 V or 5 V logic. |
| Drain-source on-resistance (typ @ 25°C) | 1.0 to 1.4 Ω @ 350 mA, 4.5 V gate | Not specified | NX3008NBKS has relatively high R_DS(on) for its current rating; TB67B008FTG,EL data missing. |
| Max ESD rating | 2000 V | Not specified | NX3008NBKS offers robust ESD protection. |
| Configuration | Dual N-Channel MOSFET | Half-bridge driver + MOSFETs | TB67B008FTG,EL integrates control and power stage for motor drive applications. |
| Input capacitance (Ciss typical) | 34 to 50 pF | Not specified | NX3008NBKS low input capacitance eases gate drive requirements. |
| Thermal resistance junction to ambient | 300 K/W (device typical) | Not specified | NX3008NBKS thermal data available; TB67B008FTG,EL thermal performance must be checked in datasheet. |
| Drain current spiking max | 1.4 A | Not specified | NX3008NBKS transient current capability is limited; TB67B008FTG,EL likely higher but unknown. |
| Ambient temperature max | +150 °C | +105 °C | NX3008NBKS better for high-temp applications. |
| Ambient temperature min | -55 °C | -40 °C | NX3008NBKS better for cold environments. |
| Mounting type | Surface mount | Surface mount | Both suitable for automated SMT assembly. |
| Technology | MOSFET (Metal Oxide) | Power MOSFET integrated driver | TB67B008FTG,EL combines driver IC and MOSFETs for motor control. |
| Function | Discrete MOSFET array | Fully integrated motor driver | TB67B008FTG,EL simplifies motor control design with integrated PWM interface. |
| Interface | N/A (MOSFET array) | PWM input | TB67B008FTG,EL requires PWM input; NX3008NBKS is a passive component. |
| Applications | General purpose, automotive | Brushless DC motor control | TB67B008FTG,EL specialized for motor control; NX3008NBKS general MOSFET array. |
Design trade-offs
The NX3008NBKS,115 is a dual N-channel MOSFET array designed for low-current switching or level shifting in automotive-grade applications. Its key strengths lie in its wide operating temperature range (-55°C to +150°C) and its logic-level gate threshold, which simplifies direct interfacing with modern microcontrollers. However, the continuous current rating is limited to 350 mA, and the on-resistance is relatively high (up to 1.4 Ω at 25°C), which restricts its use to low-current or signal-level switching applications only. The low gate charge (0.68 nC typical) eases gate drive requirements, allowing for minimal switching losses and low-power gate drive circuits, especially beneficial in battery-powered or low-power devices.
On the other hand, the TB67B008FTG,EL integrates a fully functional motor driver with built-in power MOSFETs capable of delivering up to 3 A continuous current. This integration simplifies system design by combining control logic and power stage in a single 24-WQFN package. The device supports a supply voltage range of 5.5 V to 22 V, suitable for most industrial and consumer motor control applications. Its half-bridge configuration and PWM interface allow efficient control of brushless DC motors. However, the operating temperature is limited to -40°C to +105°C, making it less suitable for harsh automotive environments or applications requiring extended temperature ranges.
Thermal dissipation and efficiency considerations diverge significantly between these parts. The NX3008NBKS,115’s relatively high R_DS(on) and low continuous current rating mean it dissipates more power per ampere conducted, limiting its use in power applications. The TB67B008FTG,EL, by design, is optimized for efficient power delivery at higher currents, but the lack of detailed thermal resistance data in the provided specs requires careful attention to PCB layout and cooling when operating near its 3 A limit.
Gate drive requirements also differ: the NX3008NBKS,115’s low gate charge and logic-level gate threshold simplify direct MCU drive without a dedicated driver IC. The TB67B008FTG,EL requires a PWM signal and integrates its own gate drivers, offloading this complexity from the designer but reducing flexibility for custom gate drive configurations.
From a layout perspective, the NX3008NBKS,115’s small 6-TSSOP package (2.2 x 1.35 mm) suits dense PCB real estate and low-power designs, whereas the TB67B008FTG,EL’s larger 24-WQFN package (4 x 4 mm) accommodates higher power dissipation and integrated circuitry but requires more board space and careful thermal management.
Cost-wise, discrete MOSFET arrays like the NX3008NBKS,115 are generally less expensive per unit and simpler, but system-level costs may increase due to the need for external control circuitry. The TB67B008FTG,EL’s integration reduces component count and assembly complexity, potentially lowering system BOM and design time for motor control applications, though the per-unit cost is typically higher.
Use-case fit
Choose NX3008NBKS,115 when…
- Designing low-current signal switches or level shifters in automotive-grade systems requiring operation from -55°C to +150°C.
- Implementing small-signal MOSFET arrays where board space is at a premium and discrete MOSFETs allow flexible control.
- Your system operates at or below 30 V and 350 mA continuous current with low switching frequency and minimal power dissipation.
- You need a logic-level MOSFET with low gate charge to minimize gate drive losses in battery-powered or low-power systems.
- An AEC-Q101 qualified discrete MOSFET array is required for automotive or harsh environment compliance.
Choose TB67B008FTG,EL when…
- Designing a brushless DC motor driver with integrated power stage and PWM control interface for up to 3 A continuous current.
- Targeting industrial or consumer motor control applications operating between 5.5 V and 22 V supply voltage.
- Minimizing PCB component count and simplifying firmware by using an integrated half-bridge driver.
- Operating in environments with moderate temperature ranges (-40°C to +105°C)