NX3008NBKS,115 vs SSM3K72KFS,LXHF MOSFET Comparison

Quick verdict

For low-voltage signal switching and load protection in automotive or industrial environments where dual MOSFETs and moderate current handling (~350mA) are needed, the NX3008NBKS,115 is superior due to its dual-channel configuration and higher power dissipation. For applications requiring higher voltage margin (up to 60 V), lower power dissipation, and a smaller single MOSFET footprint, the SSM3K72KFS,LXHF is a better fit despite its lower current rating and power dissipation.

Spec comparison table

SpecNX3008NBKS,115SSM3K72KFS,LXHFNotes
Configuration2 N-Channel (Dual)1 N-ChannelNX3008NBKS offers two MOSFETs in one package, enabling compact dual-switch designs.
Drain-Source Voltage (max)30 V60 VSSM3K72KFS offers double the voltage rating, better for higher voltage applications.
Continuous Drain Current @ 25°C350 mA300 mANX3008NBKS supports 50mA higher continuous current, useful for slightly heavier loads.
Power Dissipation (max)445 mW (per device), 990 mW (total device)150 mWNX3008NBKS can dissipate nearly 3x the power, important for thermal headroom.
Gate Charge (Qg) max @ 4.5 V0.68 nC0.6 nCSSM3K72KFS slightly lower gate charge, beneficial for lower gate drive losses.
Input Capacitance (Ciss) max50 pF @ 15 V40 pF @ 10 VSSM3K72KFS has lower input capacitance, reducing gate drive power and switching losses.
R_DS(on) max @ ID, VGS1.4 Ω @ 350 mA, 4.5 V1.5 Ω @ 100 mA, 10 VNX3008NBKS has slightly lower R_DS(on) at higher current, but measured at different conditions.
Gate-Source Threshold Voltage (Vth) max1.1 V @ 250 µA2.1 V @ 250 µANX3008NBKS has significantly lower threshold voltage, enabling easier logic-level drive.
Gate-Source Voltage max±8 V±20 VSSM3K72KFS supports higher gate voltage, allowing more robust gate drive margins.
Ambient Operating Temperature Range-55°C to +150°CUp to +150°CBoth devices support automotive temperature range; NX3008NBKS specifies min -55°C.
Package6-TSSOP (SC-88, SOT-363)SSM (SC-75, SOT-416)NX3008NBKS is a dual MOSFET in a 6-pin TSSOP; SSM3K72KFS is a single MOSFET in a smaller package.
Electrostatic Discharge Rating (ESD)2000 VNot specifiedNX3008NBKS specifies ESD rating, useful for handling precautions.
Drain Current Spiking Max1.4 ANot specifiedNX3008NBKS supports higher transient current spikes, improving surge robustness.
Thermal Resistance Junction-to-Ambient300 K/W (typ) per deviceNot specifiedNX3008NBKS provides detailed thermal data aiding thermal design.

Design trade-offs

The NX3008NBKS,115 is a dual N-channel MOSFET array, making it naturally suited for designs requiring two switches in close proximity, such as half-bridge drivers, load switches, or level shifters. This integration reduces PCB area and parasitic inductances between switches. Its 30 V rating and 350 mA continuous current rating support moderate loads typical in signal-level switching or low-power automotive circuits. The power dissipation rating (up to 445 mW per transistor) combined with explicit thermal resistance data (300 K/W junction-to-ambient) allows for controlled thermal design and reliable operation over wide temperature ranges (-55°C to 150°C).

In contrast, the SSM3K72KFS,LXHF is a single N-channel MOSFET rated for 60 V and 300 mA continuous current, with a much lower maximum power dissipation (150 mW). The higher voltage rating gives it an edge in applications with higher supply voltages or where voltage transients are a concern, like in automotive systems with 12 V or 24 V rails subject to load dump conditions. However, its lower power dissipation and current capability limit its use to lighter loads or switching signals with minimal conduction losses.

Gate drive requirements differ notably. The NX3008NBKS,115 has a maximum gate-source voltage of ±8 V and a low gate threshold voltage around 1.1 V max, making it suitable for direct logic-level drive at 4.5 V or 5 V. Its gate charge (Qg max 0.68 nC) is comparable to the SSM3K72KFS,LXHF (0.6 nC), but NX3008NBKS’s dual transistors may increase total gate drive load if both are switched simultaneously. The SSM3K72KFS,LXHF supports ±20 V gate drive voltage, providing more margin for gate voltage overshoot or underdrive, which can be useful in harsher environments or non-standard gate drive circuits.

From a layout perspective, the NX3008NBKS’s 6-TSSOP package is larger but integrates two devices, reducing the total footprint compared to two single MOSFETs. The SSM3K72KFS’s SC-75 package is smaller, beneficial where PCB space is at a premium and only one transistor is needed. Thermal management is easier with the NX3008NBKS due to its higher power ratings and more detailed thermal specs; the SSM3K72KFS requires more attention to power dissipation limits and board thermal design.

Cost at volume is not specified here, but typically dual arrays like the NX3008NBKS command a slight premium per device but reduce BOM and assembly costs compared to two discrete MOSFETs. The SSM3K72KFS, being a single transistor, may be cheaper per unit but could increase assembly complexity if dual devices are needed.

Use-case fit

Choose NX3008NBKS,115 when…

Choose SSM3K72KFS,LXHF when…

Drop-in compatibility

These devices are not pin-compatible. The NX3008NBKS,115 is a dual MOSFET in a 6-TSSOP package, while the SSM3K72KFS,LXHF is a single MOSFET in a smaller SC-75 package. Substituting one for the other requires PCB redesign for footprint and pinout differences. The NX3008NBKS integrates two transistors, so replacing it with single SSM3K72KFS units would require doubling the component count and associated layout changes. No direct drop-in substitution is possible based on the provided data.

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