NX3008NBKS,115 vs SQ2308FES-T1_GE3 MOSFET Comparison
Quick verdict
For low-current, dual-channel switching or load protection at voltages up to 30 V, the NX3008NBKS,115 is the better fit due to its integrated dual N-channel configuration and low gate charge at logic-level drive voltages. For higher-current single-switch applications up to 60 V and 2.3 A, the SQ2308FES-T1_GE3 outperforms with significantly lower R_DS(on) and higher power dissipation capability, making it suitable for power switching and load driving where current and voltage margins are critical.
Spec comparison table
| Spec | NX3008NBKS,115 | SQ2308FES-T1_GE3 | Notes |
|---|---|---|---|
| Device type | Dual N-Channel MOSFET array | Single N-Channel MOSFET | Dual channel useful for compact designs requiring two switches; single channel for higher current. |
| Drain-source voltage, max (V) | 30 V | 60 V | SQ2308FES offers double voltage rating, critical for higher-voltage applications. |
| Continuous drain current (I_D) @ 25°C | 350 mA | 2.3 A (Tc) | SQ2308FES supports ~7x higher current, enabling power switching beyond NX3008NBKS’s range. |
| Pulsed drain current (I_D,spike) | 1.4 A | Not specified | NX3008NBKS can handle brief spikes above continuous rating; no data for SQ2308FES. |
| Power dissipation max (W) | 445 mW | 2 W (Tc) | SQ2308FES can dissipate ~4.5x more power, important for thermal design at higher currents. |
| Package | 6-TSSOP (dual) | SOT-23-3 (TO-236) | Different packages; 6-TSSOP larger footprint, dual channel; SOT-23 smaller, single channel. |
| Gate threshold voltage (V_GS(th)) min/typ/max | 0.5 / 1.75 / 1.1 V | 2.5 V (max) | NX3008NBKS has lower threshold, better for logic-level drive; SQ2308FES requires higher gate voltage. |
| R_DS(on) typ @ 25°C, I_D, V_GS | 1 – 1.4 Ω @ 350 mA, 4.5 V | 150 mΩ @ 2.3 A, 10 V | SQ2308FES offers significantly lower on-resistance at higher current and gate drive voltage. |
| Gate charge Q_g max @ V_GS | 0.68 nC @ 4.5 V | 5.3 nC @ 10 V | NX3008NBKS requires less gate charge, easing gate drive losses and allowing faster switching. |
| Input capacitance C_iss max | 50 pF @ 15 V | 205 pF @ 30 V | NX3008NBKS has lower input capacitance, beneficial for high-speed switching and lower gate driver load. |
| Output capacitance C_oss typ | 6.5 pF | Not specified | NX3008NBKS data only; small output capacitance reduces switching losses. |
| Reverse transfer capacitance C_rss typ | 2.2 pF | Not specified | NX3008NBKS data only; low C_rss reduces Miller effect, improving switching performance. |
| Gate-source voltage max | ±8 V | ±20 V | SQ2308FES can withstand higher gate voltages, offering more design margin. |
| Operating temperature range | -55 to +150 °C | -55 to +175 °C | SQ2308FES supports higher max temperature, useful for harsher thermal environments. |
| ESD rating | 2000 V | Not specified | NX3008NBKS rated for ESD, useful for automotive and sensitive applications. |
| Gate leakage current (typical) | 0.2 – 1 µA @ 25 °C | Not specified | Low gate leakage in NX3008NBKS reduces static power loss. |
| Thermal resistance junction-to-ambient (typ) | 300 K/W per device | Not specified | NX3008NBKS detailed thermal data available; SQ2308FES data not provided in source. |
| Transient thermal impedance (typ) | Various, e.g. 0.5 K/W @ 100 ms | Not specified | NX3008NBKS suitable for transient thermal design; SQ2308FES data missing. |
| Device qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) | Both qualified for automotive reliability. |
| Configuration | Dual N-Channel MOSFETs | Single N-Channel MOSFET | Dual device useful to save PCB space in dual switch applications. |
Design trade-offs
The NX3008NBKS,115 is optimized for low-current switching with a logic-level gate threshold and low gate charge, making it suitable for low-power signal switching, level shifting, or load switching where switching speed and low gate drive losses are priorities. Its dual MOSFET array in a 6-TSSOP package allows for compact dual-switch topologies, reducing BOM and PCB footprint for applications like push-pull drivers or half-bridge configurations at low currents.
In contrast, the SQ2308FES-T1_GE3 targets power switching with a significantly higher continuous current rating (2.3 A vs. 0.35 A), a higher voltage rating (60 V vs. 30 V), and a much lower R_DS(on) (150 mΩ @ 2.3 A, 10 V gate drive vs. 1–1.4 Ω @ 350 mA, 4.5 V). This means SQ2308FES will dissipate far less conduction loss at higher currents, improving efficiency and thermal management. The higher power dissipation rating (2 W vs. 445 mW) also enables more robust operation under load.
However, the SQ2308FES demands a stronger gate drive voltage (up to 10 V recommended for low R_DS(on)) and has a much higher gate charge (5.3 nC vs. 0.68 nC for NX3008NBKS), impacting gate driver design and switching losses. The higher input capacitance (205 pF vs. 50 pF) also increases switching losses and may require stronger or dedicated gate drivers in high-frequency applications.
Thermally, the NX3008NBKS’s detailed transient thermal impedance data allows precise transient thermal design, but its high R_DS(on) and low current limit it to low-power applications. The SQ2308FES’s higher temperature rating and power dissipation make it more suitable for power stages but require careful gate drive design due to higher gate charge and voltage.
From a layout perspective, the dual 6-TSSOP package of NX3008NBKS provides a smaller overall footprint for dual switches but larger individual transistor footprint compared to the single SOT-23-3 package of SQ2308FES. The difference in pin count and footprint means these parts are not drop-in replacements.
In cost terms, the NX3008NBKS may be less expensive per transistor due to lower current rating and simpler gate drive requirements, but total system cost depends on application current and voltage. The SQ2308FES, with higher ratings and power handling, is likely more expensive but justified where higher power is needed.
Use-case fit
Choose NX3008NBKS,115 when…
- Implementing low-current load switches or level shifters in automotive or industrial control signals up to 30 V.
- You need a dual MOSFET array in a small 6-TSSOP footprint to drive two low-current loads with a single IC.
- Operating from low-voltage logic-level gate drive (around 4.5 V) with minimal gate drive losses.
- Application involves switching currents below 350 mA with moderate switching speeds (gate charge ~0.68 nC).
- The design benefits from automotive-grade qualification (AEC-Q101) and ESD robustness at 2 kV.
Choose SQ2308FES-T1_GE3 when…
- Driving loads requiring continuous currents up to 2.3 A at voltages up to 60 V, such as power rails, motor drivers, or high-current load switches.
- Efficiency and conduction loss minimization are critical, leveraging the low 150 mΩ R_DS(on).
- Higher operating temperature range (up to 175 °C) is required, e.g., in harsh automotive or industrial environments.
- Gate drive voltages of 10 V are available or can be implemented without complexity.
- The design can accommodate single-channel MOSFETs and requires higher power dissipation capability (2 W).
Drop-in compatibility
These devices are not pin-compatible or footprint-compatible. The NX3008NBKS is a dual MOSFET array in a 6-TSSOP package, while the SQ2308FES is a single MOSFET in a smaller SOT-23-3 package. Substituting one for the other would require redesigning the PCB footprint and adjusting the circuit topology for dual vs. single devices. Gate