NX3008NBKS,115 vs PJA3404_R1_00001: MOSFET Component Comparison
Quick verdict
For low-current signal switching and automotive-grade applications requiring dual MOSFETs in a compact package, the NX3008NBKS,115 is the better choice due to its dual N-channel configuration, logic-level gate drive, and AEC-Q101 qualification. For higher current power switching up to 5.6 A with low R_DS(on) and standard gate drive, the PJA3404_R1_00001 outperforms, offering significantly lower conduction losses and higher continuous current capability in a common SOT-23 footprint.
Spec comparison table
| Spec | NX3008NBKS,115 | PJA3404_R1_00001 | Notes |
|---|---|---|---|
| Device type | Dual N-Channel MOSFET | Single N-Channel MOSFET | NX3008NBKS,115 integrates two FETs, useful for half-bridge or complementary switches. |
| Drain-source voltage (V_DS max) | 30 V | 30 V | Equal rating; no advantage. |
| Continuous drain current (I_D @ 25°C) | 350 mA (typ, max 350 mA) | 5.6 A (Ta) | PJA3404_R1_00001 supports 16x higher current capability; critical for power applications. |
| Pulsed drain current | 1.4 A (max spiking) | Not specified | NX3008NBKS,115 supports brief spikes; PJA3404 rating unknown in datasheet snippet. |
| R_DS(on) (typical @ 25°C) | 1 – 1.4 Ω @ 350 mA, 4.5 V | 30 mΩ @ 5.6 A, 10 V | PJA3404_R1_00001 has dramatically lower R_DS(on), reducing conduction losses heavily. |
| Gate threshold voltage (V_GS(th)) | 0.5 – 1.1 V (typ 1.75 V) | 2.1 V @ 250 µA | NX3008NBKS,115 is logic-level with lower threshold; easier to drive with low-voltage logic. |
| Gate charge (Q_g) | 0.52 – 0.68 nC @ 4.5 V | 7.8 nC @ 10 V | NX3008NBKS,115 requires significantly less gate charge; easier for low-current drivers. |
| Input capacitance (C_iss) | 34 – 50 pF @ 25°C, 50 pF @ 15 V | 343 pF @ 15 V | NX3008NBKS,115 has an order of magnitude lower input capacitance; faster switching, less driver loss. |
| Output capacitance (C_oss) | 6.5 pF (typ) | Not specified | NX3008NBKS,115 has very low output capacitance, beneficial for switching speed. |
| Reverse transfer capacitance (C_rss) | 2.2 pF (typ) | Not specified | NX3008NBKS,115 lower feedback capacitance reduces Miller effect, aiding switching performance. |
| Maximum power dissipation | 445 mW | 1.25 W (Ta) | PJA3404_R1_00001 can dissipate nearly 3x more power, better for power stages. |
| Package | 6-TSSOP (dual MOSFET) | SOT-23 (single MOSFET) | Different packages and pinouts; affects PCB layout and thermal performance. |
| Operating temperature range | -55°C to +150°C (junction) | -55°C to +150°C (junction) | Equal temperature range. |
| ESD rating | 2000 V | Not specified | NX3008NBKS,115 offers known ESD robustness. |
| Gate-source voltage max/min | ±8 V | ±20 V | PJA3404_R1_00001 can handle higher gate voltage swings, useful for harsher drive conditions. |
| Transient thermal impedance (typical) | 0.02 – 1 K/W (various pulse widths) | Not specified | NX3008NBKS,115 data available; PJA3404_R1_00001 thermal impedance unknown here. |
| Continuous source current | ±350 mA | Not specified | NX3008NBKS,115 symmetric rating indicates use in bidirectional applications. |
| Drain leakage current (I_DSS) | 1 µA @ 25°C, 10 µA @ 150°C (typ) | Not specified | NX3008NBKS,115 leakage is low and characterized. |
| Gate leakage current | 0.2 – 1 µA @ 25°C | Not specified | NX3008NBKS,115 gate leakage characterized. |
| Grade / Qualification | Automotive AEC-Q101 | None listed | NX3008NBKS,115 suitable for automotive; PJA3404_R1_00001 not qualified. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent technology. |
Design trade-offs
The NX3008NBKS,115 targets low-current signal-level switching and automotive applications where dual MOSFETs in a single package simplify half-bridge or complementary switching topologies. Its low gate charge (0.52–0.68 nC) and low input capacitance (34–50 pF) translate to minimal gate drive losses and faster switching, beneficial in low-power or high-frequency logic-level control circuits. However, its relatively high R_DS(on) of 1–1.4 Ω at 350 mA limits conduction efficiency and power handling, making it unsuitable for power stage applications.
In contrast, the PJA3404_R1_00001 is a single discrete MOSFET optimized for moderate power switching, with a continuous current rating of 5.6 A and a very low R_DS(on) of 30 mΩ at 5.6 A and 10 V gate drive. This orders-of-magnitude difference in conduction resistance significantly reduces power dissipation in load-switching or power conversion circuits, improving efficiency and reducing thermal stress. However, the gate charge is substantially higher at 7.8 nC (measured at 10 V), requiring a more robust gate driver and potentially slower switching speeds or increased driver losses in high-frequency applications.
Thermally, the PJA3404_R1_00001 can dissipate up to 1.25 W (ambient), nearly three times the NX3008NBKS,115’s 445 mW, allowing it to handle higher power or operate with less aggressive thermal management. The NX3008NBKS,115’s thermal impedance data (typical junction-to-ambient of 300 K/W) and dual-device package mean power density per transistor is low, but thermal design must consider the dual die layout. The PJA3404_R1_00001’s SOT-23 package is more common for discrete MOSFETs, with well-understood thermal layout guidelines.
From a gate drive perspective, the NX3008NBKS,115’s logic-level threshold (~1.75 V typical) and ±8 V gate voltage limits mean it is compatible with 3.3 V and 5 V logic but not designed for high-voltage gate drives. The PJA3404_R1_00001 has a higher threshold voltage (~2.1 V) and ±20 V gate voltage tolerance, allowing more flexibility in gate drive voltage but requiring a stronger driver to achieve low R_DS(on).
Layout-wise, the NX3008NBKS,115’s dual 6-TSSOP package offers compact integration but requires careful PCB design to handle thermal dissipation across two MOSFETs and maintain low parasitic inductances for fast switching. The PJA3404_R1_00001’s single SOT-23 footprint is simpler, with well-established land patterns and thermal vias usage.
Cost considerations at volume typically favor single discrete MOSFETs like the PJA3404_R1_00001, which are simpler to manufacture and source. The NX3008NBKS,115’s dual MOSFET and automotive-grade qualification (AEC-Q101) usually imply a higher unit cost, justified only when the dual function or automotive reliability is required.
Use-case fit
Choose NX3008NBKS,115 when…
- Designing automotive or industrial control circuits requiring AEC-Q101 qualification for reliability and extended temperature range.
- Implementing dual low-current switching functions in a single compact package, such as complementary MOSFET switches or low-side load drivers.
- Operating at low voltages (3.3 V or 5 V logic) where logic-level gate drive and low gate charge reduce gate driver complexity.
- Switching small signals or loads below 350 mA with minimal gate drive losses and fast switching.
- Applications requiring low input and reverse transfer capacitances to minimize switching losses and EMI in sensitive analog or RF circuits.
Choose PJA3404_R1_00001 when…
- Switching or controlling loads up to 5.6 A continuous current, such as power rails, motor drivers, or high-current load switches.
- Efficiency and conduction losses are critical, requiring low R_DS(on) (30 mΩ