Component Comparison: NX3008NBKS,115 vs MAX31790ATI+T

Quick verdict

For low-voltage, low-current discrete MOSFET switching or small-signal load switching, the NX3008NBKS,115 is the superior choice due to its simple dual N-channel MOSFET array, automotive-grade qualification, and well-characterized static and dynamic parameters. In contrast, for integrated motor driver applications requiring digital control, fault management, and multiple low-side outputs with I2C interface, the MAX31790ATI+T is the better fit, providing a fully integrated power stage and driver logic in a compact package.


Spec comparison table

SpecNX3008NBKS,115MAX31790ATI+TNotes
Device typeMOSFET Array, Dual N-ChannelIntegrated Motor Driver with Power MOSFETsNX3008 is discrete MOSFETs; MAX31790 is integrated driver + MOSFETs
Voltage rating (Drain-Source)30 VNot specifiedNX3008 explicitly rated for 30 V, MAX31790 load voltage unspecified
Continuous Drain Current350 mA (typ)Not specifiedNX3008 rated for low current; MAX31790 does not specify max output current
Drain Current Spiking Max1.4 ANot specifiedNX3008 can handle brief spikes up to 1.4 A
Power dissipation max445 mWNot specifiedNX3008 power dissipation given; MAX31790 not specified
Package6-TSSOP (2.2 × 1.35 mm)28-TQFN (4 × 4 mm)NX3008 smaller discrete MOSFET package; MAX31790 larger, integrated device
Operating temperature-55°C to +150°C (junction)-40°C to +125°C (ambient)NX3008 supports wider and higher temperature range
Gate charge (Qg)Typ 0.52 to 0.68 nC @ 4.5 VNot specifiedNX3008 gate charge known, low gate charge suitable for low gate drive power
Gate threshold voltage (Vgs_th)Typ 0.6–1.1 V; Max 1.1 V @ 250 µANot specifiedNX3008 logic-level gate MOSFET, known threshold
Input capacitance (Ciss)Typ 34–50 pF @ 25°CNot specifiedNX3008 small input capacitance aids switching speed
Output capacitance (Coss)Typ 6.5 pFNot specifiedNX3008 low output capacitance
Reverse transfer capacitance (Crss)Typ 2.2 pFNot specifiedNX3008 low Crss reduces Miller effect
ESD rating2000 VNot specifiedNX3008 ESD rating documented
Thermal resistance junction-to-ambientTyp 300 K/W per deviceNot specifiedNX3008 thermal resistance indicates limited power dissipation capability
Transient thermal impedanceTyp 0.5 K/W (100 ms)Not specifiedNX3008 documented transient thermal performance
Gate voltage max/min±8 VNot specifiedNX3008 gate voltage limits known
Current leakage (Id, Ig)Typ Id 1 µA @ 25°C; 10 µA @ 150°C; Ig 0.2–1 µA typNot specifiedNX3008 leakage currents specified, important for low power and precision circuits
TechnologyMOSFET (discrete)Integrated Power MOSFET + DriverDifferent device classes, impacting application and design
InterfaceNoneI2CMAX31790 includes digital interface for control
FunctionMOSFET arrayFully integrated motor driverNX3008 raw MOSFETs; MAX31790 includes control logic and power stage
Motor type supportedN/ABrushless DC (BLDC)MAX31790 specialized for BLDC motor control
Output configurationN/A6 low-side MOSFET outputsMAX31790 multiple outputs for motor phases
Supply voltageN/A (MOSFET drain-source max 30 V)3 V – 5.5 VMAX31790 operates at low DC supply voltage typical for logic and motor driver
Mounting typeSurface mountSurface mountBoth surface mount, but different package sizes
QualificationAEC-Q101 AutomotiveNot specifiedNX3008 meets automotive reliability standard

Design trade-offs

The NX3008NBKS,115 is a dual discrete N-channel MOSFET array optimized for low-voltage, low-current switching applications where small size, automotive qualification, and well-characterized electrical parameters are critical. Its 30 V rating and low continuous drain current (350 mA) make it suitable for signal-level loads or low power switching, but its relatively high R_DS(on) (typ 1 to 1.4 Ω at 350 mA) limits its usefulness in power switching applications. The low gate charge (~0.6 nC) and small input/output capacitances allow for moderate switching speeds with minimal gate drive power, which is beneficial in low-power microcontroller-driven designs.

In contrast, the MAX31790ATI+T integrates multiple low-side MOSFETs with a digital I2C interface and control logic tailored for BLDC motor driving. This integration greatly simplifies system design by offloading PWM generation, fault detection, and motor commutation to the driver IC. However, the absence of detailed MOSFET electrical parameters such as R_DS(on), gate charge, or maximum current ratings in the datasheet limits the ability to optimize thermal design or gate drive power precisely. The operating temperature range of -40°C to +125°C is narrower compared to the NX3008, which may restrict its use in harsher environments.

Thermal management is a clear consideration: the NX3008’s high thermal resistance junction-to-ambient (~300 K/W) and low power dissipation rating (445 mW max) force conservative power budgets and careful PCB layout with thermal vias to avoid overheating. The MAX31790, with its exposed pad 28-TQFN package, likely offers better thermal dissipation, but exact values are not provided. The integrated driver logic on the MAX31790 reduces external component count and complexity but requires firmware support for I2C communication and motor control algorithms, increasing design complexity on the software side.

From a cost perspective, the NX3008 is likely cheaper at volume due to its simpler function and smaller package, suitable for high-reliability automotive or industrial signal switching. The MAX31790, as a specialized integrated motor driver, will command a premium but reduces overall BOM cost and board space in motor control applications.


Use-case fit

Choose NX3008NBKS,115 when…

Choose MAX31790ATI+T when…


Drop-in compatibility

These parts are not pin- or footprint-compatible. The NX3008NBKS,115 is a 6-TSSOP dual MOSFET array, while the MAX31790ATI+T is a fully integrated 28-pin TQFN device with embedded driver logic and multiple MOSFET outputs. The MAX31790 requires an I2C interface and power supply wiring, whereas the NX3008 is a passive MOSFET array controlled directly via gate drive signals. Substituting one for the other would require significant schematic and PCB redesign, firmware changes, and power stage re-qualification.


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