NX3008NBKS,115 vs IRFZ44N,127 MOSFET Comparison
Quick verdict
For low-voltage, low-current switching where board space and integrated dual transistor capability matter, the NX3008NBKS,115 is the better choice due to its small 6-TSSOP package, logic-level gate drive, and automotive qualification. For high-current, higher-voltage power switching and linear load applications requiring robust thermal dissipation and through-hole mounting, the IRFZ44N,127 dominates with its 49A continuous drain current rating and 110W power dissipation capability.
Spec comparison table
| Spec | NX3008NBKS,115 | IRFZ44N,127 | Notes |
|---|---|---|---|
| Product type | Dual N-Channel MOSFET Array | N-Channel MOSFET | NX3008NBKS integrates two devices, useful for complementary or half-bridge functions. |
| Drain-Source Voltage (Vds max) | 30 V | 55 V | IRFZ44N allows nearly double voltage margin, better for higher-voltage applications. |
| Continuous Drain Current (Id max @25°C) | 350 mA | 49 A (Tc) | IRFZ44N supports >100x higher current, suitable for power stages. |
| Pulsed Drain Current (Id pulse max) | 1.4 A | 160 A (min) | IRFZ44N handles much larger pulse currents. |
| Drain-Source On-Resistance (Rds(on) typ) | 1–1.4 Ω @ 350mA, 4.5V | 22 mΩ @ 25A, 10V | IRFZ44N’s Rds(on) is ~50x lower at relevant high current, critical for conduction loss. |
| Gate Threshold Voltage (Vgs(th) typ) | 0.6–1.1 V | 3.0 V | NX3008NBKS is logic-level drive, lower voltage needed to turn on. |
| Gate Voltage Max | ±8 V | ±20 V | IRFZ44N can withstand higher gate drive voltages, offers wider drive margin. |
| Gate Charge (Qg typ) | 0.52–0.68 nC @ 4.5V | 44 nC @ 10V | NX3008NBKS requires ~65x less gate charge, enabling lower gate drive power and faster switching. |
| Input Capacitance (Ciss typ @ ~25V) | 34–50 pF | 1350–1800 pF | NX3008NBKS has dramatically lower input capacitance, reducing switching losses and EMI. |
| Output Capacitance (Coss typ) | 6.5 pF | 400 pF | Lower output capacitance in NX3008NBKS reduces voltage overshoot and switching losses. |
| Reverse Transfer Capacitance (Crss typ) | 2.2 pF | 215 pF | Lower Crss in NX3008NBKS reduces Miller effect, improving switching speed. |
| Power Dissipation Max | 445 mW (per device), total 990 mW max | 110 W (Tc) | IRFZ44N supports over 200x higher power dissipation; suitable for high-power designs. |
| Package Type | 6-TSSOP (Surface Mount) | TO-220AB (Through Hole) | NX3008NBKS is SMT, small footprint; IRFZ44N requires heatsinking and more PCB area. |
| Operating Temperature Range | -55°C to +150°C | -55°C to +175°C | IRFZ44N supports higher TJ max, offering more margin in harsh environments. |
| Thermal Resistance Junction-to-Ambient | ~300 K/W per device | 25 °C/W (typ) | IRFZ44N has much better thermal performance due to package and mounting. |
| ESD Voltage Rating | 2000 V | Not specified | NX3008NBKS provides explicit ESD robustness rating. |
| Avalanche Energy Rating | Not specified | 110 mJ typ, 110 mJ max | IRFZ44N can absorb avalanche energy, useful in inductive load switching. |
| Gate Leakage Current (typ) | 0.2–1 µA | 1 mA (typ) @ -10V gate bias | NX3008NBKS gate leakage is orders of magnitude lower, reducing static power and noise. |
| Transistor Configuration | Dual N-Channel | Single N-Channel | NX3008NBKS offers two matched MOSFETs in one package, convenient for half-bridge or complementary designs. |
| Switching Times (typical) | Turn-on delay: 15–30 ns; Fall time: 19 ns | Turn-on delay: ~30 ns; Fall time: 50 ns | NX3008NBKS faster switching times, but difference is small for many power applications. |
| Gate Source Voltage Threshold (max) | 0.6–1.1 V | 4 V @ 1mA | NX3008NBKS can fully turn on at logic levels (3.3–5V), whereas IRFZ44N needs 10V drive. |
| Reverse Diode Forward Voltage (typ) | Not specified | 1.2 V | IRFZ44N’s body diode forward voltage may impact efficiency in synchronous rectification. |
| Dielectric Strength | Not specified | 2% typical | Not directly comparable without context. |
| Gate Threshold Voltage (max) | 1.1 V | 4 V | Lower gate threshold voltage in NX3008NBKS makes it suitable for low-voltage logic-level drive. |
| Mass | Not specified | 2 g max | IRFZ44N is significantly heavier, reflecting its larger size and robust package. |
Design trade-offs
The NX3008NBKS,115 and IRFZ44N,127 address fundamentally different application spaces, which is immediately clear from their current ratings and package styles. The NX3008NBKS,115 is a dual MOSFET array optimized for low-voltage, low-current switching with logic-level gate drive, making it ideal for signal-level or driver-stage switching, level shifting, or small load control embedded in compact SMT form factors. Its low input capacitance (34–50 pF vs. 1350–1800 pF) and very low gate charge (approximately 0.5 nC vs. 44 nC) translate directly into lower gate drive power and faster switching with less EMI, which is a crucial consideration in dense, high-speed digital environments.
Conversely, the IRFZ44N,127 is a power MOSFET designed for high-current, high-power switching. Its 49A continuous current rating and 110W power dissipation capability, combined with the TO-220 package, allow it to be mounted on a heatsink for demanding loads such as motor drives, power supplies, and automotive power stages. The significantly lower Rds(on) of 22 mΩ at 25A and 10V gate drive means conduction losses are minimal for high current, though the higher gate charge and input capacitance increase switching losses and gate driver complexity. The IRFZ44N requires a dedicated gate driver with 10V drive voltage to fully enhance the channel, which increases design complexity and power consumption in gate drive circuitry.
Thermally, the difference is stark. The NX3008NBKS has a thermal resistance junction-to-ambient of approximately 300 K/W per device, making it suitable only for low-power dissipation without forced cooling. The IRFZ44N’s package and mounting style reduce thermal resistance to around 25 °C/W, allowing it to dissipate over 100W with a proper heatsink. This means board layout for the IRFZ44N must accommodate larger copper areas or external heatsinking, while the NX3008NBKS can be used in compact, dense SMT layouts with minimal thermal management.
From a firmware and gate driver perspective, the NX3008NBKS’s logic-level gate threshold (~0.6–1.1 V) and low gate charge make it suitable for direct MCU or low-power driver IC interfacing at 3.3–5 V logic levels. The IRFZ44N, however, needs at least 10 V gate drive and more robust driver capabilities to switch efficiently and avoid partial conduction, which affects driver design and power budget.
Cost-wise, the NX3008NBKS’s dual-device SMT package and automotive qualification (AEC-Q101) will generally command a higher unit price per MOSFET but reduce BOM and assembly complexity in dual-MOSFET applications. The IRFZ44N is a mature, widely used power MOSFET with low per-unit cost at volume but higher system cost due to heatsinking and driver requirements.
Use-case fit
Choose NX3008NBKS,115 when:
- You need a dual N-channel MOSFET in a tiny SMT package for space-constrained designs.
- Operating voltages are below 30 V