NX3008NBKS,115 vs IMZA65R020M2HXKSA1 MOSFET Comparison

Quick verdict

For low-voltage, low-current switching applications requiring compact integration and automotive AEC-Q101 qualification, the NX3008NBKS,115 is the clear winner due to its small footprint, dual MOSFET array, and logic-level gate drive. For high-voltage, high-current power conversion where efficiency and ruggedness dominate, the IMZA65R020M2HXKSA1 stands out with a 650 V rating, 83 A continuous current capability, and low R_DS(on), albeit at the cost of a larger through-hole package and higher gate drive requirements.

Spec comparison table

SpecNX3008NBKS,115IMZA65R020M2HXKSA1Notes
Device typeDual N-Channel MOSFET arraySingle N-Channel MOSFETDual array suits integrated switching; single device for high power
Voltage rating (V_DS max)30 V650 VIMZA65R020M2HXKSA1 supports much higher voltage applications
Continuous drain current (I_D)350 mA83 A (at T_C)IMZA65R020M2HXKSA1 supports >200× higher current
Pulsed drain current (I_D spike)1.4 A291 A (typ peak)IMZA65R020M2HXKSA1 can handle large surge currents
On-resistance R_DS(on) @ 25°C1.4 Ω @ 350 mA, 4.5 V gate18 mΩ @ 46.9 A, 20 V gateIMZA65R020M2HXKSA1 has vastly lower R_DS(on), critical for conduction loss at high current
Gate threshold voltage (V_GS(th))Typ 1.75 V (0.6-1.1 V range)Typ 4.5 V (3.5-5.6 V range)NX3008NBKS,115 supports logic-level drive; IMZA65R020M2HXKSA1 requires higher gate voltage
Gate charge (Q_g)0.52-0.68 nC @ 4.5 V291-500 nC @ 18 VNX3008NBKS,115 requires orders of magnitude less gate drive energy
Input capacitance (C_iss)Typ 34-50 pFTyp 103 pF (min 104 pF, max 101 pF)NX3008NBKS,115 has significantly lower input capacitance, beneficial for high-speed switching
Output capacitance (C_oss)Typ 6.5 pFTyp 151 pF (min 151 pF)Lower output capacitance reduces switching losses in NX3008NBKS,115
Reverse transfer capacitance (C_rss)Typ 2.2 pFNot specifiedNX3008NBKS,115 offers very low Miller capacitance
Power dissipation max445 mW273 W (T_C)IMZA65R020M2HXKSA1 designed for high power dissipation
Package type6-TSSOP (surface mount)PG-TO247-4 (through hole)NX3008NBKS,115 is compact SMD; IMZA65R020M2HXKSA1 is large TO-247 for heat dissipation
Operating temperature range-55°C to 150°C-55°C to 175°CIMZA65R020M2HXKSA1 supports higher max TJ
Avalanche energyNot specified272 mJ (typ)IMZA65R020M2HXKSA1 can absorb avalanche events for robustness
ESD rating2000 VNot specifiedNX3008NBKS,115 offers ESD protection suitable for automotive
Gate-source voltage max/min±8 V+23 V / -7 VIMZA65R020M2HXKSA1 supports higher gate voltages but requires careful gate drive design
Drain-source leakage current1 µA @ 25°C, 10 µA @ 150°CNot specifiedNX3008NBKS,115 has low leakage suitable for low power applications
Switching times (t_on / t_off)t_on typ 15-30 ns, t_off typ 69-138 nst_off max 103 nsSwitching speed comparable; IMZA65R020M2HXKSA1 optimized for power conversion
Thermal resistance Junction-to-AmbientTyp 300 K/W (device)0.55 °C/W (typ)IMZA65R020M2HXKSA1 package enables much better thermal dissipation
Grade / QualificationAutomotive, AEC-Q101JEDEC IndustrialNX3008NBKS,115 qualified for automotive; IMZA65R020M2HXKSA1 industrial grade
TechnologySi MOSFETSiC FETSiC device provides higher voltage, efficiency, and temperature capabilities
Mounting typeSurface mountThrough holeSMD for compactness (NX3008NBKS,115); TO-247 for thermal management (IMZA65R020M2HXKSA1)

Design trade-offs

The NX3008NBKS,115 is a low-voltage, low-current dual MOSFET array optimized for compact surface-mount applications, especially in automotive environments. Its logic-level gate threshold (~1.75 V typ) and low gate charge (<1 nC) enable direct drive from low-voltage logic outputs without additional gate drivers or charge pumps. The device’s high on-resistance (~1.4 Ω at 350 mA) restricts it to low-power switching or load switching applications where conduction losses are minimal. Its low input and output capacitance reduce switching losses and EMI, valuable in high-frequency switching at low currents.

In contrast, the IMZA65R020M2HXKSA1 is a high-voltage (650 V), high-current (83 A) SiC MOSFET designed for demanding power conversion tasks such as SMPS, solar inverters, and motor drives. Its R_DS(on) is extremely low (18 mΩ at 46.9 A), which reduces conduction losses dramatically at high currents but requires a robust gate driver capable of delivering ~300-500 nC of gate charge at 18-20 V. The higher gate threshold voltage (~4.5 V typ) and gate voltage rating (+23 V max) mean it cannot be driven directly from standard logic levels without a gate driver stage.

Thermally, the IMZA65R020M2HXKSA1’s TO-247 package and low thermal resistance (~0.55 °C/W) allow it to dissipate hundreds of watts, while the NX3008NBKS,115’s tiny TSSOP package with ~300 K/W junction-to-ambient resistance limits power dissipation to under 1 W, requiring careful thermal design or limited duty cycles. The SiC technology of the Infineon device also offers higher avalanche energy (272 mJ) and improved ruggedness against voltage spikes compared to the silicon NX3008NBKS.

From a layout perspective, mounting the NX3008NBKS,115 is straightforward on a dense PCB with tight spacing, but thermal constraints mean good copper area and possibly thermal vias are needed even for low power. The IMZA65R020M2HXKSA1 requires a heatsink or direct mounting to a metal chassis with thermal interface material, and its larger footprint demands more board space and mechanical support.

Cost-wise, the NX3008NBKS,115 is a low-cost, volume-friendly choice for low-power automotive or general-purpose load switching, with the benefit of dual transistors in one package. The IMZA65R020M2HXKSA1, as a SiC MOSFET with a specialized package, is significantly more expensive and targeted at high-performance industrial power conversion.

Use-case fit

Choose NX3008NBKS,115 when…

Choose IMZA65R020M2HXKSA1 when…