Component Comparison: NX3008NBKS,115 vs IMYH200R075M1HXKSA1
Quick verdict
For low-voltage, low-current applications requiring compact, automotive-grade MOSFET arrays, the NX3008NBKS,115 is the clear choice due to its dual-channel integration, logic-level gate drive, and small footprint. Conversely, for high-voltage, high-power switching, especially in industrial or power conversion contexts where 2000 V and 34 A continuous current are required, the IMYH200R075M1HXKSA1 dominates with its SiC technology and robust thermal handling.
Spec comparison table
| Spec | NX3008NBKS,115 | IMYH200R075M1HXKSA1 | Notes |
|---|---|---|---|
| Device type | Dual N-Channel MOSFET Array | Single N-Channel MOSFET | Dual device vs single transistor; NX3008NBKS better for integrated dual-channel control |
| Drain-Source Voltage (Vmax) | 30 V | 2000 V | IMYH200R075M1HXKSA1 supports much higher voltage, suitable for high-voltage applications |
| Continuous Drain Current (Id, 25°C) | 350 mA | 34 A (Tc) | IMYH200R075M1HXKSA1 supports 100x higher current; NX3008NBKS is for low current only |
| Power Dissipation (Max) | 445 mW | 267 W (Tc) | IMYH200R075M1HXKSA1 handles >500x more power, reflecting TO-247 package and cooling |
| Gate Threshold Voltage (Vgs_th max) | 1.1 V @ 250µA | 5.5 V @ 7.7mA | NX3008NBKS has logic-level gate threshold, easier to drive from low-voltage logic |
| Gate Charge (Q_g max) | 0.68 nC @ 4.5 V | 64 nC @ 18 V | NX3008NBKS requires negligible gate charge, enabling faster switching and lower gate drive losses |
| Rds(on) (typical @ Id, Vgs) | 1.4 Ω @ 350mA, 4.5 V | 98 mΩ @ 13 A, 18 V | IMYH200R075M1HXKSA1 has much lower on-resistance at high current, important for conduction losses |
| Package | 6-TSSOP (surface mount) | TO-247-4 (through-hole) | Surface mount vs through-hole; affects assembly, cooling, and footprint |
| Operating Temperature Range (TJ) | -55°C to +150°C | -55°C to +175°C | IMYH200R075M1HXKSA1 supports wider TJ range, useful for high-temp environments |
| Thermal Resistance Junction-to-Ambient | 300 K/W (device typical) | Not specified, but TO-247 typically <50 K/W | NX3008NBKS limited by small package, IMYH200R075M1HXKSA1 can dissipate more heat |
| ESD Rating | 2000 V (HBM) | Not specified | NX3008NBKS has documented ESD rating, useful for automotive-grade applications |
| Gate Voltage Max | ±8 V | +20 V / -7 V | IMYH200R075M1HXKSA1 supports wider gate voltage swings, but requires higher drive voltage |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS can handle brief spikes up to 1.4 A, no info for IMYH200R075M1HXKSA1 |
| Configuration | Dual N-Channel | Single N-Channel | NX3008NBKS integrates two transistors, IMYH200R075M1HXKSA1 is a discrete single device |
| Technology | MOSFET (Si) | SiC MOSFET (SiCFET) | SiC offers better high-voltage, high-temp, and switching performance |
| Mounting Type | Surface Mount | Through Hole | Surface mount better for compact designs, through-hole better for heat dissipation |
| Grade | Automotive (AEC-Q101 qualified) | Not specified | NX3008NBKS suited for automotive reliability requirements |
| Gate leakage current (typical @ 25°C) | 0.2 - 1 µA | Not specified | Low gate leakage beneficial for low-power control logic |
| Gate-Drain Charge (Qg_d) | 0.08 nC (typical) | Not specified | Lower Miller charge on NX3008NBKS benefits switching speed |
| Input Capacitance (Ciss) | 34 - 50 pF (typical) | Not specified | Lower input capacitance on NX3008NBKS supports faster switching |
| Rise/Fall Times (typical @ 25°C) | t_rise 11 ns, t_fall 19 ns | Not specified | NX3008NBKS datasheet provides switching times, useful for timing-critical designs |
| Total Power Dissipation (typ, device) | 280 mW | Not specified | NX3008NBKS power dissipation limited by small package |
| Transient Thermal Impedance (typ) | ~0.01 to 1 K/W (varies by time scale) | Not specified | NX3008NBKS data on transient thermal response aids transient overload design |
Design trade-offs
The NX3008NBKS,115 is a low-voltage (30 V), low-current (350 mA) dual MOSFET array optimized for compact, logic-level driven applications with minimal gate charge and low input capacitance. Its 6-TSSOP surface mount package allows for high-density PCB layouts, making it suitable for signal switching, level shifting, or low-power motor control. However, its relatively high Rds(on) of ~1.4 Ω at 350 mA and 4.5 V gate drive means conduction losses become significant at higher currents, and the power dissipation limit of under 0.5 W restricts its use to low-power scenarios. The dual transistor configuration also facilitates half-bridge or complementary switch topologies in a small footprint.
In contrast, the IMYH200R075M1HXKSA1 targets high-voltage (2000 V), high-current (34 A) applications such as power inverters, industrial drives, or power supplies requiring SiC MOSFET benefits like higher switching speed, higher temperature operation, and superior robustness. Its TO-247 through-hole package allows for efficient heat sinking and dissipation of up to 267 W at case temperature, a massive increase over the NX3008NBKS. However, it requires a higher gate drive voltage (up to 18 V) and has a much higher gate charge (64 nC), which translates to greater gate drive power and potentially slower switching unless the gate driver is specifically designed for SiC devices.
From a layout perspective, NX3008NBKS’s small package and low gate charge simplify the gate drive design and enable compact, low-cost PCB implementations, but thermal constraints necessitate careful current and power budgeting. The IMYH200R075M1HXKSA1 demands robust gate drivers capable of 18 V drive and managing 64 nC gate charge, plus a substantial cooling solution due to higher losses and larger package size. SiC’s lower Rds(on) at high current (98 mΩ @ 13 A) significantly reduces conduction losses compared to traditional Si MOSFETs, but the higher gate voltage and charge require more complex gate drive circuits.
Cost at volume is also a major factor: the NX3008NBKS is a low-voltage MOSFET array likely priced in the low cents range, ideal for cost-sensitive automotive or consumer electronics. The IMYH200R075M1HXKSA1, as a high-voltage SiC MOSFET with a rugged package, will be considerably more expensive, justifiable only where its performance enables system-level benefits that outweigh cost.
Use-case fit
Choose NX3008NBKS,115 when…
- Designing automotive or industrial control signal switching circuits requiring AEC-Q101 qualification and operation up to 150°C.
- Implementing low-side or high-side switches at voltages ≤30 V and currents ≤350 mA, such as LED drivers, sensor switches, or low-current relays.
- Needing dual MOSFETs in a single compact 6-TSSOP package for half-bridge or complementary switching in small form-factor PCBs.
- Gate drive voltage is limited to 4.5–5 V logic levels, avoiding the need for dedicated level shifters or high-voltage gate drivers.
- Minimizing gate charge and input capacitance to reduce switching losses and gate driver complexity in low power, fast switching applications.
Choose IMYH200R075M1HXKSA1 when…
- Designing power electronics requiring blocking voltages up to 2000 V and continuous currents up to 34 A, such as motor drives, solar inverters,