Comparison: NX3008NBKS,115 vs IMLT65R020M2HXTMA1 MOSFETs
Quick verdict
For low-voltage, low-current switching and signal-level load switching—especially in automotive or industrial control circuits—the NX3008NBKS,115 is the clear choice due to its logic-level gate drive and dual MOSFET array in a compact 6-TSSOP package. Conversely, for high-voltage, high-current power conversion applications, particularly requiring ruggedness and high efficiency up to 650 V and over 100 A, the IMLT65R020M2HXTMA1 silicon carbide MOSFET dominates, offering much lower on-resistance and higher thermal dissipation capability.
Spec comparison table
| Spec | NX3008NBKS,115 | IMLT65R020M2HXTMA1 | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel MOSFET | Single N-Channel MOSFET | Dual device useful for complementary or half-bridge low-power switching; single device for power stage. |
| Technology | Silicon MOSFET (Metal Oxide) | SiC FET (Silicon Carbide) | SiC offers better high-voltage, high-temp, and efficiency characteristics. |
| Drain-Source Voltage (max) | 30 V | 650 V | IMLT65R020M2HXTMA1 supports much higher voltage, enabling power conversion applications. |
| Continuous Drain Current (ID) @ 25°C | 350 mA | 107 A (Tc) | IMLT65R020M2HXTMA1 handles over two orders of magnitude higher current. |
| Drain-Source On-Resistance (RDS(on)) | 1.4 Ω @ 350 mA, 4.5 V gate | 24 mΩ @ 46.9 A, 18 V gate | IMLT65R020M2HXTMA1 has dramatically lower RDS(on), critical for conduction loss reduction at high currents. |
| Gate Threshold Voltage (VGS(th)) | 0.6–1.1 V (typ 0.9 V) | 5.6 V @ 9.5 mA | NX3008NBKS,115 is logic-level gate drive; IMLT65R020M2HXTMA1 requires higher gate drive voltage. |
| Gate Charge (Qg) | 0.68 nC @ 4.5 V | 57 nC @ 18 V | NX3008NBKS,115 has extremely low gate charge, easing gate drive complexity for low-voltage applications. |
| Input Capacitance (Ciss) | 34–50 pF @ 15 V | 2038 pF @ 400 V | NX3008NBKS,115 has orders of magnitude lower input capacitance, enabling faster switching at low voltages. |
| Power Dissipation (max) | 445 mW | 454 W (at Tc) | IMLT65R020M2HXTMA1 supports heavy power dissipation, suitable for power stages. |
| Operating Temperature Range (TJ) | -55°C to +150°C | -55°C to +175°C | IMLT65R020M2HXTMA1 can withstand higher junction temperatures, useful in harsh environments. |
| Package | 6-TSSOP (6 pins) | PG-HDSOP-16-6 (Power SOP module) | NX3008NBKS,115 is small and compact; IMLT65R020M2HXTMA1 is larger with more pins for power handling. |
| ESD Rating | 2000 V | Not specified | NX3008NBKS,115 offers explicit ESD protection rating. |
| Thermal Resistance Junction-to-Ambient | Typ 300 K/W per device | Not specified | NX3008NBKS,115 is thermally limited by small package; IMLT65R020M2HXTMA1 designed for high-power dissipation. |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS,115 can tolerate transient spikes several times nominal current. |
| Gate-Source Voltage Max | ±8 V | +23 V / -7 V | IMLT65R020M2HXTMA1 requires higher gate voltage range, which increases gate drive complexity. |
| Transient Thermal Impedance (typical) | 0.01–1 K/W (various timescales) | Not specified | NX3008NBKS,115 transient thermal impedance data given; useful for pulse power design. |
Design trade-offs
The NX3008NBKS,115 is a low-voltage (30 V), low-current (350 mA) dual MOSFET array optimized for logic-level switching with extremely low gate charge and input capacitance. This makes it ideal for switching small loads, level shifting, or multiplexing signals with minimal gate drive requirements. Its small 6-TSSOP package and low thermal dissipation capability (445 mW max) limit it to low power applications. The dual MOSFET configuration allows space savings and simplified layout in circuits needing complementary or multiple switches.
In contrast, the IMLT65R020M2HXTMA1 is a single high-voltage (650 V), high-current (107 A) SiC MOSFET module designed for power conversion, motor drives, and other applications where efficiency and thermal performance are paramount. Its RDS(on) of 24 mΩ at 46.9 A and 18 V gate drive voltage is orders of magnitude lower than the NX3008NBKS,115, resulting in significantly lower conduction losses at high currents. However, the gate drive requirements are more demanding—requiring 18 V gate drive and handling a gate charge of 57 nC, which impacts gate driver design, switching speed, and EMI considerations.
Thermally, the IMLT65R020M2HXTMA1 is capable of dissipating hundreds of watts at case temperature, making it suitable for heat-sinked, high-power stages. The NX3008NBKS,115’s thermal resistance and max power dissipation restrict it to low-power switching or signal-level applications. The NX3008NBKS,115’s lower operating temperature ceiling (+150°C vs. +175°C) is generally sufficient for automotive or industrial logic-level switching, while the SiC device’s higher junction temperature rating suits harsher environments.
From a layout perspective, the NX3008NBKS,115’s small footprint and low pin count simplify dense PCB designs but require careful attention to thermal management due to the limited power dissipation. The IMLT65R020M2HXTMA1’s larger PowerSOP package with multiple pins improves thermal and current handling but demands more PCB area and robust gate driver circuits.
Cost-wise, the NX3008NBKS,115 will be significantly cheaper and more readily available for low-power designs, while the IMLT65R020M2HXTMA1 commands a premium price reflecting its high-voltage SiC technology and power rating.
Use-case fit
Choose NX3008NBKS,115 when…
- You need to switch or multiplex low-voltage (≤30 V), low-current (≤350 mA) loads such as LED indicators, sensors, or small relays.
- Gate drive is limited to logic-level voltages (3.3 V or 5 V) and low gate charge is critical for minimizing power consumption in microcontroller-driven circuits.
- Space constraints require a compact dual MOSFET array in a small 6-TSSOP footprint.
- The application requires automotive-grade qualification (AEC-Q101), ensuring reliability in harsh environments.
- Thermal dissipation does not exceed a few hundred milliwatts and ambient temperatures remain below +150°C.
Choose IMLT65R020M2HXTMA1 when…
- Designing power conversion stages such as DC-DC converters, motor drives, or inverters requiring blocking voltages up to 650 V and continuous currents over 100 A.
- Efficiency is critical at high current levels, and conduction losses must be minimized using ultra-low RDS(on) SiC MOSFET technology.
- The thermal design includes heat sinking or liquid cooling to handle power dissipation in the hundreds of watts range.
- Gate drivers can supply 18 V gate drive voltage and handle the comparatively high gate charge (57 nC), with suitable switching speed and EMI mitigation.
- The application demands operation in high-temperature environments up to +175°C junction temperature.
Drop-in compatibility
These devices are not pin-compatible or footprint-compatible. The NX3008NBKS,115 is a dual MOSFET array in a 6-TSSOP package with six pins, while the IMLT65R020M2HXTMA1 is a single SiC MOSFET in a 16-pin PowerSOP module designed for high power. Substituting one for the other requires a complete redesign of the PCB footprint, gate driver circuitry, and thermal management approach. The gate drive voltage levels and switching characteristics are also incompatible without circuit modifications.
Alternatives to consider
- BSS138 (Nexperia): Low-voltage logic-level N-channel MOSFET, single transistor, suitable for low-current switching, similar to NX300