Comparison Article: NX3008NBKS,115 vs IMBG120R078M2HXTMA1 MOSFETs
1. Quick verdict
For low-voltage, low-current switching or multiplexing applications, the NX3008NBKS,115 is the clear choice due to its integrated dual MOSFET array, very low gate charge (~0.68 nC), and logic-level gate drive compatibility. Conversely, for high-voltage, high-current power conversion or motor drive applications requiring 1200 V blocking and continuous currents up to 29 A, the IMBG120R078M2HXTMA1 (SiC MOSFET) is the appropriate candidate, offering a low R_DS(on) of 78 mΩ and high thermal dissipation (158 W).
2. Spec comparison table
| Spec | NX3008NBKS,115 | IMBG120R078M2HXTMA1 | Notes |
|---|---|---|---|
| Product Type | Dual N-Channel MOSFET Array | N-Channel MOSFET (Single) | NX3008NBKS offers dual in single package; IMBG120R078M2H is a single discrete device |
| Drain-Source Voltage, V_DS (max) | 30 V | 1200 V | IMBG120R078M2H supports much higher voltage, suitable for industrial power applications |
| Continuous Drain Current, I_D (typ) | 350 mA | 29 A (at T_case) | IMBG120R078M2H supports ~80x higher current |
| Drain Current Spiking Max | 1.4 A | 105 A (peak) | IMBG120R078M2H handles much higher surge current |
| On-resistance, R_DS(on) (typ @25°C) | 1.0 – 1.4 Ω @ 350 mA, 4.5 V gate | 78.1 mΩ @ 8.9 A, 18 V gate | IMBG120R078M2H offers orders of magnitude lower R_DS(on) at high current |
| Gate Threshold Voltage, V_GS(th) (typ) | 0.6 – 1.1 V | 3.5 – 5.1 V | NX3008NBKS can be driven directly from logic-level signals; IMBG120R078M2H requires higher gate drive voltage |
| Gate Charge, Q_g (typ) | 0.52 – 0.68 nC @ 4.5 V | 20.6 nC @ 18 V | NX3008NBKS has extremely low gate charge, reducing drive losses and switching energy |
| Power Dissipation, P_D (max) | 445 mW | 158 W (at T_case) | IMBG120R078M2H can dissipate ~350x more power, suitable for high power applications |
| Operating Temperature Range | -55°C to +150°C | -55°C to +175°C | IMBG120R078M2H has wider operating range for harsh environments |
| Package Type | 6-TSSOP (SOT-363 variant) | PG-TO263-7-12 (D2PAK variant) | IMBG120R078M2H is a larger power package, requiring different PCB footprint |
| Input Capacitance, C_iss (typ) | 34 – 50 pF @ 25°C, 15 V | 700 pF @ 800 V | NX3008NBKS has lower input capacitance, easier to drive at low voltages |
| Reverse Transfer Capacitance, C_rss (typ) | 2.2 pF | 2.4 pF | Comparable; negligible difference |
| Forward Transconductance, g_fs (typ) | 310 mS | 6 S (6000 mS) | IMBG120R078M2H has ~20x higher transconductance, enabling higher gain and faster switching |
| Rise/Fall Times (typ) | Rise: 11 ns, Fall: 19 ns | Rise: 13.4 ns, Fall: 2 ns | IMBG120R078M2H has faster fall time, beneficial for high-frequency switching |
| Gate Leakage Current (typ) | 0.2 – 1 µA | Max -120 nA | IMBG120R078M2H has lower gate leakage, improving efficiency and reliability at high voltage |
| ESD Rating | 2000 V | Not specified | NX3008NBKS rated for automotive-grade ESD protection |
| Qualification | AEC-Q101 (Automotive grade) | None specified | NX3008NBKS is qualified for automotive reliability |
| Total Switching Energy (typ) | Not specified | 96 µJ @ 25°C | IMBG120R078M2H switching losses are documented; NX3008NBKS not specified |
| Avalanche Energy (typ) | Not specified | 112 mJ typical, 0.56 mJ repetitive max | IMBG120R078M2H designed for avalanche energy handling |
| Thermal Resistance Junction-to-Ambient | 300 K/W per device | 62 K/W (min) | IMBG120R078M2H package offers better thermal dissipation |
| Thermal Resistance Junction-to-Case | 130 K/W | 0.95 K/W (max), 0.73 K/W (typ) | IMBG120R078M2H package superior for thermal management |
| Storage Temperature Range | -65°C to +150°C | -55°C to +150°C | Similar ranges |
| Mounting Type | Surface Mount | Surface Mount | Both are SMT but different packages |
3. Design trade-offs
The NX3008NBKS,115 and IMBG120R078M2HXTMA1 target fundamentally different application spaces. The NX3008NBKS,115 is a dual low-voltage MOSFET array optimized for signal-level switching, multiplexing, and low-current loads. Its extremely low gate charge (~0.68 nC at 4.5 V) and logic-level threshold (0.6–1.1 V) allow direct interfacing with low-voltage digital logic without the need for dedicated gate drivers, reducing complexity and power consumption in the driver IC. However, its R_DS(on) exceeds 1 Ω at 350 mA, meaning it cannot handle significant power or high currents without excessive losses.
The IMBG120R078M2HXTMA1 is a Silicon Carbide (SiC) MOSFET designed for high-voltage (1200 V), high-current (29 A continuous) power applications such as motor drives, power supplies, and industrial converters. Its low R_DS(on) of 78 mΩ at 8.9 A and 18 V gate drive voltage ensures conduction losses are minimized at power levels orders of magnitude above what NX3008NBKS can handle. However, it requires a dedicated gate driver capable of delivering 20.6 nC of gate charge at 18 V, and has a significantly higher gate threshold voltage (3.5–5.1 V), which precludes direct logic-level driving.
Thermally, the IMBG120R078M2HXTMA1’s package and junction-to-case thermal resistance (around 0.73–0.95 K/W) make it far easier to cool in high-power designs, whereas the NX3008NBKS’s 6-TSSOP package with ~130 K/W junction-to-case resistance is only suitable for low power dissipation (under 445 mW max). The SiC MOSFET’s higher avalanche energy rating and switching speed also enable more robust operation in switching power applications, with reduced switching losses due to faster fall times (2 ns vs 19 ns).
From a PCB design standpoint, the NX3008NBKS is much smaller (2.2 mm x 1.35 mm) and comes in a dual-device array, saving board area and simplifying routing in low-current logic switching. The IMBG120R078M2HXTMA1’s larger TO-263 package (~5.2 mm length typical, 7 leads + tab) requires more robust copper pours, thermal vias, and careful attention to minimize thermal resistance, but provides the mechanical and thermal robustness needed for high-power operation.
Cost considerations at volume will generally favor the NX3008NBKS for low-power consumer or automotive multiplexing tasks due to its integrated dual MOSFET array and simpler drive requirements. The IMBG120R078M2HXTMA1 will be more expensive but justifiable in high-voltage, high-current industrial or automotive power electronics.
4. Use-case fit
Choose NX3008NBKS,115 when…
- Implementing low-voltage signal multiplexing or switching, where 30 V max and sub-0.5 A current is sufficient.
- Direct interfacing with 3.3 V or 5 V logic without a dedicated MOSFET driver IC.
- Automotive or industrial environments requiring AEC-Q101 qualification and ESD robustness.
- Space-constrained PCB layouts where a dual MOSFET array reduces component count and board area.
- Switching loads where gate charge and switching losses must be minimal at low current levels.