Comparison: NX3008NBKS,115 vs IMBG120R017M2HXTMA1
Quick verdict
For low-voltage, low-current switching or load switching in compact, automotive-grade applications, the NX3008NBKS,115 is the clear choice due to its small footprint, logic-level gate drive, and integrated dual MOSFET array. For high-voltage, high-current power conversion, especially in industrial or traction scenarios requiring 1200 V blocking and over 100 A continuous current, the IMBG120R017M2HXTMA1 dominates — its SiC technology and robust thermal ratings support demanding conditions no silicon MOSFET array can match.
Spec comparison table
| Spec | NX3008NBKS,115 | IMBG120R017M2HXTMA1 | Notes |
|---|---|---|---|
| Absolute max voltage (Vds) | 30 V | 1200 V | IMBG120R017M2HXTMA1 supports 40x higher voltage, critical for high-voltage applications |
| Continuous drain current (Id) | 350 mA | 107 A (Tc) | IMBG120R017M2HXTMA1 handles ~300x higher current, suitable for power stages |
| Max power dissipation | 445 mW | 470 W (Tc) | IMBG120R017M2HXTMA1 dissipates 1000x more power, reflecting power device class |
| Package | 6-TSSOP (dual MOSFET array) | PG-TO263-7-12 (single MOSFET) | NX3008NBKS,115 is compact; IMBG120R017M2HXTMA1 is large, designed for heatsinking |
| Gate threshold voltage (Vgs_th) | Typ 0.6-1.1 V | Typ 4.2-5.1 V | NX3008NBKS,115 is logic-level drive compatible; IMBG120R017M2HXTMA1 requires higher gate drive voltage |
| Rds(on) typ @ 25°C | 1.0-1.4 Ω @ 350 mA, 4.5 V | 17.1 mΩ @ 40.4 A, 18 V | IMBG120R017M2HXTMA1 has orders of magnitude lower Rds(on), critical for efficiency at high current |
| Gate charge (Qg) typ | 0.52-0.68 nC @ 4.5 V | 89 nC @ 18 V | NX3008NBKS,115 has negligible gate charge, enabling fast switching with low drive loss |
| Input capacitance (Ciss) typ | 34-50 pF | 2910 pF @ 800 V | IMBG120R017M2HXTMA1’s high capacitance requires stronger gate drivers and slower switching |
| Output capacitance (Coss) typ | 6.5 pF | 126 pF | Lower capacitance in NX3008NBKS,115 favors faster switching at low voltages |
| Reverse transfer capacitance (Crss) typ | 2.2 pF | 11 pF | Lower Crss reduces Miller effect, NX3008NBKS,115 has advantage in low-voltage switching speed |
| Avalanche energy (single) | N/A (not specified) | 508 mJ | IMBG120R017M2HXTMA1 can handle avalanche events, important for inductive load switching |
| Avalanche energy repetitive | N/A | 2.54 mJ | Relevant for ruggedness in power applications |
| Junction temperature range | -55 to +150 °C | -55 to +175 °C | IMBG120R017M2HXTMA1 supports higher max TJ, suits harsh environments |
| Thermal resistance junction-to-ambient | Typ 300 K/W (per device) | Typ 0.32 K/W | IMBG120R017M2HXTMA1’s package and design enable much better heat dissipation |
| Total power dissipation (typ) | 280 mW | N/A (470 W max) | Reflects vastly different power scales |
| Switching times (turn-on delay) | 15-30 ns | Min 7 ns, Typ 18.2 ns | Switching speed comparable but IMBG120R017M2HXTMA1 requires higher voltage drive |
| ESD rating | 2 kV | Not specified | NX3008NBKS,115 rated for automotive ESD robustness |
| Number of channels | Dual N-Channel | Single N-Channel | NX3008NBKS,115 integrates two MOSFETs, useful for half-bridge or complementary functions |
| Technology | MOSFET (silicon) | SiCFET (Silicon Carbide) | SiC offers higher voltage, temperature, and switching speed |
| Forward transconductance (gm) | 310 mS | 27.1 S | IMBG120R017M2HXTMA1’s gm is much higher, consistent with higher power capability |
| Gate leakage current typ | ~1 µA | 120 nA | Both low gate leakage, NX3008NBKS slightly higher but negligible for most designs |
| Storage temperature range | -65 to +150 °C | -55 to +150 °C | Comparable |
| Mounting type | Surface mount | Surface mount | Both SMT, but package sizes differ significantly |
| Package size (length x width) | 2.2 mm x 1.35 mm | 4.20-5.20 mm x (not specified) | NX3008NBKS smaller, enabling dense PCB layouts |
Design trade-offs
The NX3008NBKS,115 and IMBG120R017M2HXTMA1 serve fundamentally different segments despite both being N-channel MOSFETs. The NX3008NBKS,115 is a low-voltage, low-current dual MOSFET array designed for signal-level switching, level shifting, and small load control in automotive environments. Its logic-level gate threshold (typ ~1 V) and very low input capacitance (~50 pF) enable direct drive from 3.3 V or 5 V logic with minimal switching losses. The small 6-TSSOP package supports high-density PCB layouts and reduces parasitic inductances, important for low-noise switching in sensitive circuits.
In contrast, the IMBG120R017M2HXTMA1 is a high-voltage, high-current silicon carbide MOSFET designed for power conversion stages such as motor drives, power supplies, or traction inverters. Its 1200 V rating and 107 A continuous current capability require a physically large PG-TO263 package with substantial thermal management, including heatsinking and careful PCB layout for current handling. The SiC technology enables higher operating temperatures (up to 175 °C TJ) and faster switching speeds at high voltages, but the gate drive requirements are more demanding — gate voltages up to 18 V and significant gate charge (~89 nC) necessitate dedicated gate driver ICs capable of supplying high peak currents.
Thermally, the NX3008NBKS,115 dissipates under 0.5 W max and has poor thermal resistance (~300 K/W), making it unsuitable for power applications but adequate for signal-level loads. The IMBG120R017M2HXTMA1 can handle hundreds of watts with low thermal resistance (~0.32 K/W), but requires a well-designed thermal path (heatsink, thermal vias). The difference in switching energy and gate charge means the IMBG120R017M2HXTMA1 will have significantly higher switching losses unless driven with optimized gate drivers and snubber circuits.
From a layout perspective, the NX3008NBKS,115’s small dual MOSFET array reduces BOM and routing complexity for low-current logic switches or load drivers. The IMBG120R017M2HXTMA1 requires large copper areas for heat dissipation and low inductance, and the higher gate voltage demands careful gate resistor selection and EMI mitigation measures.
Cost at volume will differ dramatically: the NX3008NBKS,115 is a low-cost logic device suitable for millions of units in automotive signal chains, whereas the IMBG120R017M2HXTMA1 is a specialized power MOSFET with a price reflecting its advanced SiC process and ruggedness, typically used in lower volume high-value power electronics.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a compact dual MOSFET array for switching small loads up to 350 mA at 30 V in automotive or industrial control boards.
- Logic-level gate drive compatibility (1–5 V) is required to interface directly with microcontrollers or FPGAs without extra gate driver ICs.
- PCB real estate is tight, and you want to minimize component count by integrating two MOSFETs in one small 6-TSSOP package.
- The application involves switching signals or low-current loads with switching frequencies where low gate charge and low input capacitance reduce EMI and power loss.
- An AEC-Q101 qualified device is required for automotive reliability and extended temperature range (-55 to +150 °C).
Choose IMBG120R017M2HXTMA1 when…
- Your design involves high-voltage (up to 1200 V) power conversion such as in motor drives, solar inverters, or traction applications requiring high blocking voltage.
- Continuous current demands exceed tens of amps (up to 107 A) and high power dissipation (~470 W) necessitates a robust package with thermal management.
- You need fast switching and low conduction losses at high current to improve efficiency, enabled by the low Rds(on) of 17.1 mΩ at