Comparison: Nexperia NX3008NBKS,115 vs Diodes Incorporated DMN63D8L-7
Quick verdict
For low-voltage, low-current switching in space-constrained or multi-switch applications, the NX3008NBKS,115 wins due to its dual MOSFET array in a compact 6-TSSOP and automotive qualification (AEC-Q101). For single-switch, low-power designs requiring the smallest footprint and slightly better switching speed, the DMN63D8L-7 in SOT-23-3 is preferable, especially when gate drive voltage can reach 10 V and thermal dissipation is limited to ~350 mW.
Spec comparison table
| Spec | NX3008NBKS,115 | DMN63D8L-7 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | Single N-Channel | NX3008NBKS offers two MOSFETs in one package, useful for half-bridge or dual loads |
| Drain-Source Voltage (max) | 30 V | 30 V | Equivalent rating |
| Continuous Drain Current @ 25°C | 350 mA | 350 mA | Equivalent current rating |
| Drain Current Spiking Max | 1.4 A | 2.78 A @ Vgs=10V (max) | DMN63D8L-7 supports higher transient currents, better for pulsed loads |
| On-Resistance (Rds(on)) @ 25°C, 4.5 V gate | 1.4 Ω (typ), 1.4 Ω (max @ 350mA, 4.5V) | 2.8 Ω (max) @ 250mA, 10 V gate | NX3008NBKS has significantly lower Rds(on) at logic-level drive (~4.5 V) |
| Gate Threshold Voltage (VGS_th) | 0.5 - 1.1 V (typ 0.6-0.9-1.1 V) | 0.8 - 1.5 V (max) | NX3008NBKS has lower and tighter threshold voltage, better for low-voltage gate drive |
| Gate Charge (Qg) | 0.52 - 0.68 nC @ 4.5 V | 0.9 nC @ 10 V max | NX3008NBKS requires less gate charge, reducing switching losses and gate drive power |
| Input Capacitance (Ciss) | 34 - 50 pF | 23.2 pF @ 25 V | DMN63D8L-7 has lower input capacitance, potentially faster switching |
| Output Capacitance (Coss) | 6.5 pF (typ) | 3.0 pF (max) | DMN63D8L-7 has lower output capacitance, reducing switching losses |
| Reverse Transfer Capacitance (Crss) | 2.2 pF (typ) | 2.2 pF (max) | Equivalent |
| Gate Leakage Current (typ @ 25°C) | 0.2 - 1 µA | Max 10 µA | NX3008NBKS has significantly lower gate leakage, better for low-power and precision |
| Power Dissipation (max) | 445 mW | 350 mW | NX3008NBKS can dissipate more power, better for thermal margin |
| Junction Temperature Range | -55 to +150 °C | -55 to +150 °C | Equivalent |
| Package | 6-TSSOP (Dual MOSFET) | SOT-23-3 (Single MOSFET) | NX3008NBKS is larger but integrates two devices |
| Package Dimensions (L x W) | 2.2 mm x 1.35 mm | 2.9 mm x 1.3 mm | NX3008NBKS package is shorter and narrower but thicker due to dual MOSFETs |
| Thermal Resistance Junction-to-Ambient (typ) | 300 K/W (device), 390-445 K/W (per transistor) | ~357-359 °C/W (typ) | Similar thermal resistance per device, but NX3008NBKS has two MOSFETs sharing thermal load |
| ESD Rating | 2000 V | Not specified | NX3008NBKS has specified ESD robustness |
| Switching Times (Turn-On Delay / Turn-Off Delay) | 15-30 ns / 69-138 ns | Max 2.3 ns / 11.4 ns | DMN63D8L-7 switches faster, beneficial in high-speed switching |
| Transient Thermal Impedance (typ 100ms) | 0.5 K/W | Not specified | NX3008NBKS provides detailed transient thermal impedance data |
| Diode Forward Voltage (typ) | Not specified | 1.2 V (typ), 0.8 - 1.2 V range | DMN63D8L-7 includes body diode Vf, important for synchronous rectification design |
| Gate Drive Voltage Max | ±8 V | ±20 V | DMN63D8L-7 supports higher gate voltage, increasing flexibility |
| Grade / Qualification | Automotive (AEC-Q101) | None | NX3008NBKS is automotive qualified, better for harsh environments |
Design trade-offs
The NX3008NBKS,115 is a dual N-channel MOSFET array optimized for low-voltage logic-level gate drive (4.5 V typical), with a relatively low Rds(on) of 1.4 Ω at 350 mA and 4.5 V gate drive. This makes it suitable for applications where board space is at a premium but two switches are needed, such as low-current load switches or signal multiplexers. Its automotive-grade qualification (AEC-Q101) and ESD rating of 2000 V also make it a strong candidate for automotive or industrial environments requiring robust reliability.
By contrast, the DMN63D8L-7 is a single N-channel MOSFET with a slightly higher Rds(on) of 2.8 Ω at 250 mA and 10 V gate drive, indicating it requires stronger gate drive voltage for optimal conduction losses. Its maximum continuous current is similar, but it supports higher transient currents up to 2.78 A at 10 V gate drive, making it more suitable for pulsed or transient high-current applications. The DMN63D8L-7’s faster switching times (turn-on delay max 2.3 ns, turn-off delay max 11.4 ns) and lower input/output capacitances (Ciss 23.2 pF vs 34-50 pF, Coss 3 pF vs 6.5 pF) favor designs where switching losses and EMI need to be minimized, especially at higher frequencies.
Thermally, the NX3008NBKS has a higher maximum power dissipation (445 mW vs 350 mW) and detailed transient thermal impedance data, reflecting its dual-device nature and slightly better heat spreading. However, the thermal resistance per transistor is higher due to the dual MOSFET package. The DMN63D8L-7’s smaller single MOSFET SOT-23-3 package limits power dissipation but also allows for compact layouts.
Gate drive requirements differ notably: the NX3008NBKS targets logic-level drive (4.5 V), with low gate charge (~0.6 nC) and low gate leakage, beneficial for battery-powered or low-voltage microcontroller platforms. The DMN63D8L-7, with a gate voltage max of ±20 V and typical gate charge ~0.9 nC @ 10 V, expects a higher drive voltage for low Rds(on), which may complicate gate drive circuitry if the system voltage is limited.
Cost-wise, the NX3008NBKS integrates two MOSFETs in a single automotive-qualified package, potentially offering BOM savings in multi-switch designs, but likely at a higher unit price and larger footprint than the DMN63D8L-7, which is a common single MOSFET in a standard SOT-23-3.
Use-case fit
Choose NX3008NBKS,115 when…
- You need two matched low-current MOSFETs in one package for half-bridge or dual load switching, saving PCB space.
- Operating in automotive or industrial environments requiring AEC-Q101 qualification and 150°C ambient tolerance.
- Your system uses low-voltage logic-level gate drive (3–5 V) and requires low gate charge to minimize driver power.
- Thermal dissipation requirements exceed 350 mW per device, or transient power pulses require detailed thermal modeling.
- The design benefits from lower gate leakage current to reduce leakage power or improve high-impedance node stability.
Choose DMN63D8L-7 when…
- You need a single low-voltage MOSFET with fast switching speed for high-frequency switching or synchronous rectification.
- Your gate drive voltage can reach 10 V or higher to achieve lower conduction losses at 2.8 Ω max Rds(on).
- The design requires the smallest possible footprint with a standard SOT-23-3 package.
- Transient pulsed currents up to ~2.8 A are