Component Comparison: NX3008NBKS,115 vs DMN3042L-7
Quick verdict
For low-current, dual-channel switching or level-shifting applications with strict space and power constraints, the NX3008NBKS,115 offers a compact, automotive-grade solution with integrated dual MOSFETs ideal for signal-level loads up to 350mA. Conversely, for single-channel, high-current switching up to 5.8A, the DMN3042L-7 provides a much lower R_DS(on) and higher continuous current rating, making it suitable for power stages and load switches requiring up to several amps and moderate gate drive voltages.
Spec comparison table
| Spec | NX3008NBKS,115 | DMN3042L-7 | Notes |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 1 N-Channel | NX3008NBKS,115 offers dual MOSFETs; DMN3042L-7 is single channel. |
| Drain-Source Voltage, V_DS max | 30 V | 30 V | Equal voltage rating; no advantage. |
| Continuous Drain Current, I_D | 350 mA (typ) | 5.8 A (Ta) | DMN3042L-7 supports ~16x higher continuous current; critical for power switching. |
| Pulsed Drain Current, I_D max | 1.4 A | Not specified | NX3008NBKS,115 handles small surge currents; DMN3042L-7 datasheet does not specify pulsed I_D. |
| Drain-Source On-Resistance, R_DS(on) | 1.4 Ω @ 350mA, 4.5 V (typ) | 26.5 mΩ @ 5.8A, 10 V (max) | DMN3042L-7 has dramatically lower R_DS(on), reducing conduction losses at high currents. |
| Gate Threshold Voltage, V_GS(th) | 0.6–1.1 V (typ/max) @ 250µA | 1.4 V @ 250µA | NX3008NBKS,115 turns on at lower V_GS, better for low-voltage logic-level drive. |
| Gate Charge, Q_g | 0.52–0.68 nC @ 4.5 V (typ) | 20 nC @ 10 V (max) | NX3008NBKS,115 has significantly lower gate charge, enabling faster switching and lower gate drive losses. |
| Input Capacitance, C_iss | 34–50 pF (typ) @ 25 °C, 50 pF max @ 15 V | 860 pF @ 15 V | NX3008NBKS,115’s input capacitance is ~17x smaller, easing gate drive and switching speed. |
| Output Capacitance, C_oss | 6.5 pF (typ) | Not specified | NX3008NBKS,115 lower C_oss reduces switching losses; DMN3042L-7 data incomplete. |
| Reverse Transfer Capacitance, C_rss | 2.2 pF (typ) | Not specified | NX3008NBKS,115 likely to have lower Miller effect; helps switching speed. |
| Maximum Power Dissipation, P_D | 445 mW (typ), 990 mW (max) | 720 mW (Ta) | DMN3042L-7 handles higher power dissipation at ambient temperature. |
| Package | 6-TSSOP (dual MOSFET), SC-88, SOT-363 | SOT-23-3 (single) | NX3008NBKS,115 dual MOSFET in compact 6-pin; DMN3042L-7 smaller 3-pin package for single device. |
| Junction Temperature Range | -55 to +150 °C | -55 to +150 °C | Equal operating temperature range. |
| Electrostatic Discharge Rating, ESD | 2000 V (HBM) | Not specified | NX3008NBKS,115 has specified ESD rating, useful for handling in manufacturing. |
| Gate-Source Voltage Max | ±8 V | ±12 V | DMN3042L-7 supports higher gate voltages, allowing more robust gate drive margins. |
| Thermal Resistance, Junction-to-Ambient | 300 K/W (typ) per device | Not specified | NX3008NBKS,115 has high thermal resistance, limiting power dissipation unless well cooled. |
| Transient Thermal Impedance | 0.01–1 K/W (typ, time dependent) | Not specified | NX3008NBKS,115 transient thermal data available; DMN3042L-7 not provided. |
| Current Leakage, I_DSS | 1 µA @ 25 °C, 10 µA @ 150 °C | Not specified | NX3008NBKS,115 leakage currents are low and specified; unknown for DMN3042L-7. |
| Grade / Qualification | Automotive (AEC-Q101 qualified) | None specified | NX3008NBKS,115 validated for automotive reliability; DMN3042L-7 no qualification noted. |
Design trade-offs
The NX3008NBKS,115 targets low-level switching and signal multiplexing with its dual low-current MOSFETs in a compact 6-TSSOP package. The device’s relatively high R_DS(on) (~1.4 Ω at 350 mA) and low continuous current rating (350 mA) restrict it to light loads or level shifting rather than power switching. The extremely low input capacitance (~50 pF) and gate charge (<1 nC) enable fast switching with minimal gate drive current, favorable for low-power logic interfaces or multiplexing signals where gate drive power and switching speed are critical.
In contrast, the DMN3042L-7 is a single N-MOSFET rated for 5.8 A continuous current with a very low R_DS(on) of 26.5 mΩ at 10 V gate drive, making it suitable for moderately high-current load switches or power stages. However, its gate charge is nearly 40x higher (20 nC at 10 V), and input capacitance is large (860 pF), which requires a stronger gate driver and results in higher switching losses at high frequencies. The maximum gate voltage of ±12 V provides ample margin for robust gate driving, but the larger gate charge impacts efficiency in switching applications.
Thermally, the NX3008NBKS,115’s high thermal resistance (300 K/W typical) and low power dissipation limit its use to low-current applications or designs with efficient PCB thermal management. DMN3042L-7’s higher power dissipation rating (720 mW at ambient) and lower R_DS(on) reduce conduction losses, easing thermal design at currents up to several amps, but the lack of detailed thermal impedance data requires careful empirical validation.
Layout-wise, the NX3008NBKS,115’s dual MOSFET in a 6-pin package allows compact dual-channel solutions, reducing board space and component count but demands careful routing for heat dissipation and signal integrity. The DMN3042L-7’s smaller 3-pin SOT-23 package simplifies single-channel designs and is widely supported, but you lose the dual-channel integration and must provision separate components for multiple channels.
Cost-wise, the NX3008NBKS,115’s automotive qualification (AEC-Q101) and dual MOSFET integration likely command a premium compared to the more generic DMN3042L-7, which targets general-purpose power switching at moderate cost.
Use-case fit
Choose NX3008NBKS,115 when…
- You need two low-current (≤350 mA) N-channel MOSFETs in a single compact 6-TSSOP package for signal multiplexing or level shifting.
- Operating temperature range and automotive qualification (AEC-Q101) are mandatory for harsh environments.
- Your design requires ultra-low gate charge and input capacitance to minimize gate drive losses in fast switching logic interfaces.
- Space is at a premium and integrating two devices into one package reduces BOM and PCB area.
- Your load currents are small, and conduction losses are less critical than gate drive efficiency and package integration.
Choose DMN3042L-7 when…
- You need to switch or control loads up to several amps (5.8 A continuous) at 30 V.
- Low conduction losses are critical, with R_DS(on) around 26.5 mΩ at 10 V gate drive.
- Your gate driver can supply higher gate charge (~20 nC) and voltage up to ±12 V.
- You require a small 3-pin SOT-23 package for single-channel power switching or load switching.
- Automotive qualification is not required, and cost sensitivity favors a general-purpose MOSFET.
Drop-in compatibility
These parts are not pin-compatible or footprint-compatible. The NX3008NBKS,115 is a dual MOSFET in a 6-TSSOP package with six pins, while the DMN3042L-7 is a single MOSFET in a 3-pin SOT-23-3 package. Substituting one for the other requires significant PCB redesign and circuit adaptation, including accommodating different pinouts, gate