NX3008NBKS,115 vs DMG3402L-7 MOSFET Comparison
Quick verdict
For low-current, dual-channel switching applications with tight space and automotive qualification needs, the NX3008NBKS,115 is the better choice due to its integrated dual MOSFET array and AEC-Q101 compliance. For single-channel, higher-current switching or load driving up to 4A at 30V, the DMG3402L-7 offers much lower on-resistance and higher continuous current capability, making it preferable for power stages and load switches.
Spec comparison table
| Spec | NX3008NBKS,115 | DMG3402L-7 | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel MOSFET array | Single N-Channel MOSFET | NX3008NBKS offers two devices in one package, saving board space for dual-switch needs. |
| Drain-Source Voltage (Vds max) | 30 V | 30 V | Equal max voltage rating. |
| Continuous Drain Current (Id) @ 25°C | 350 mA | 4 A | DMG3402L-7 supports >10x higher current, suitable for power applications. |
| Max Power Dissipation (Pd) | 445 mW (per device), 990 mW (total device) | 1.4 W (Ta) | DMG3402L-7 handles more than 3x power dissipation, better for higher power use cases. |
| On-Resistance Rds(on) @ Id, Vgs | Typ 1.5 Ω @ 350 mA, 4.5 V; Max 1.4 Ω | Max 52 mΩ @ 4 A, 10 V | DMG3402L-7 has dramatically lower Rds(on), reducing conduction losses at higher currents. |
| Gate Charge (Qg) | Typ 0.52–0.68 nC @ 4.5 V | Max 11.7 nC @ 10 V | NX3008NBKS has much lower gate charge, requiring less gate drive energy. |
| Input Capacitance (Ciss) @ 15 V | Max 50 pF | Max 464 pF | NX3008NBKS has an order of magnitude lower input capacitance, improving switching speed. |
| Gate-Source Voltage (Vgs max) | ±8 V | ±12 V | DMG3402L-7 supports higher gate voltages, allowing more gate voltage margin. |
| Gate Threshold Voltage (Vgs_th) | Typ 0.6–1.1 V @ 250 µA | Typ 1.4 V @ 250 µA | NX3008NBKS has lower threshold voltage, better for logic-level drive. |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS limited to 1.4 A spike; DMG3402L-7 can handle continuous 4 A. |
| Package | 6-TSSOP (dual FETs) | SOT-23-3 | Different footprints; NX3008NBKS is dual MOSFET array, DMG3402L-7 is single transistor. |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C | Both cover wide industrial temperature ranges. |
| Thermal Resistance Junction-to-Ambient (typ) | 300 K/W per device | Not specified | NX3008NBKS datasheet provides thermal resistance; DMG3402L-7 data not provided here. |
| ESD Rating | 2000 V (HBM) | Not specified | NX3008NBKS includes ESD rating, important for automotive/robustness. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Same technology base. |
| Gate Leakage Current (typ) @ 25°C | 0.2–1 µA | Not specified | NX3008NBKS has low gate leakage specified; DMG3402L-7 data not provided. |
| Power Dissipation (typical) | 280 mW | Not specified | NX3008NBKS typical dissipation given, useful for thermal design. |
| Transient Thermal Impedance | 0.01 to 1 K/W (typical, time-dependent) | Not specified | NX3008NBKS provides detailed thermal transient data. |
Design trade-offs
The NX3008NBKS,115 and DMG3402L-7 address fundamentally different application needs despite sharing the same voltage rating. The NX3008NBKS integrates two low-current MOSFETs in a compact 6-TSSOP package with logic-level gate drive and automotive qualification (AEC-Q101), making it ideal for signal switching, level shifting, or load switching at sub-1A currents. Its very low gate charge (~0.6 nC) and low input capacitance (~50 pF) translate to low gate drive power and fast switching at low currents, which is beneficial in battery-powered or low-noise designs.
In contrast, the DMG3402L-7 is a single discrete MOSFET optimized for much higher load currents (4A continuous) and power dissipation (1.4W). Its extremely low Rds(on) of 52 mΩ at 4 A and 10 V gate drive significantly reduces conduction losses in power conversion or load driving applications. However, this comes at the cost of a much higher gate charge (11.7 nC), meaning gate drivers must source more current to switch efficiently, increasing switching losses and gate drive complexity at high frequencies.
Thermal management considerations favor the DMG3402L-7 in high-current applications due to its higher power dissipation rating and inherently lower Rds(on). The NX3008NBKS’s higher Rds(on) (~1.5 Ω at 350 mA) limits its conduction efficiency and thermal performance, making it unsuitable for power stages but fine for signal-level switching. The NX3008NBKS datasheet provides detailed transient thermal impedance figures, which are useful when designing for pulsed operation within its current limits.
From a layout perspective, the NX3008NBKS’s dual FET array in a 6-TSSOP footprint can save board space and routing complexity when two low-current switches are needed, especially in automotive-grade designs requiring reliability and ESD robustness. The DMG3402L-7’s SOT-23-3 package is smaller for single FETs but lacks the integration benefit.
Cost-wise, the NX3008NBKS is likely more expensive per unit due to its dual MOSFET array and automotive qualification, though it could reduce total BOM cost by replacing two discrete MOSFETs. The DMG3402L-7 is a commodity single MOSFET with a focus on cost efficiency in power switching roles.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a dual low-current MOSFET switch in a compact, automotive-qualified package for signal-level switching or multiplexing.
- Your application requires logic-level gate drive with very low gate charge to minimize gate driver power consumption.
- Space savings from integrating two MOSFETs in one package outweigh the higher on-resistance.
- ESD robustness and automotive AEC-Q101 qualification are mandatory for system reliability.
- Switching currents are below 350 mA continuous and occasional spikes up to 1.4 A are acceptable.
Choose DMG3402L-7 when…
- Your design involves high-current loads up to 4 A at 30 V, such as power rails, motor drivers, or load switches.
- You require low on-resistance (52 mΩ) to minimize conduction losses and improve efficiency.
- Gate drive voltage up to 10 V or even ±12 V is available to fully enhance the device and minimize Rds(on).
- Thermal dissipation of up to 1.4 W (ambient) can be managed with appropriate PCB layout.
- You need a small, single discrete MOSFET in a standard SOT-23-3 footprint for simple power switching.
Drop-in compatibility
These devices are not pin-compatible or footprint-compatible:
- NX3008NBKS,115 is a dual MOSFET array in a 6-TSSOP package designed for two independent N-channel MOSFET switches.
- DMG3402L-7 is a single MOSFET in a 3-pin SOT-23-3 package.
Substituting one for the other requires redesigning the PCB footprint and potentially the control logic (dual vs single FET). There is no direct drop-in substitution possible.
Alternatives to consider
- BSS138 (ON Semiconductor, dual N-channel MOSFET array): Low-voltage dual MOSFETs with logic-level gate drive, useful for low-current switching similar to NX3008NBKS.
- Si2302 (Vishay, N-channel MOSFET): Small SOT-23 package, low-voltage, low Rds(on) MOSFET for power switching, comparable to DMG3402L-7 in footprint but different electrical specs.
- Si2323DS (Vishay, dual N-channel MOSFET array): Dual MOSFET array optimized for low-voltage applications,